|
US5633781A
(en)
|
1995-12-22 |
1997-05-27 |
International Business Machines Corporation |
Isolated sidewall capacitor having a compound plate electrode
|
|
US6025226A
(en)
*
|
1998-01-15 |
2000-02-15 |
International Business Machines Corporation |
Method of forming a capacitor and a capacitor formed using the method
|
|
US6251740B1
(en)
*
|
1998-12-23 |
2001-06-26 |
Lsi Logic Corporation |
Method of forming and electrically connecting a vertical interdigitated metal-insulator-metal capacitor extending between interconnect layers in an integrated circuit
|
|
US6156640A
(en)
|
1998-07-14 |
2000-12-05 |
United Microelectronics Corp. |
Damascene process with anti-reflection coating
|
|
TW374948B
(en)
|
1998-07-28 |
1999-11-21 |
United Microelectronics Corp |
Method of prevention of poisoning trenches in dual damascene process structures and dielectric layer windows
|
|
US6174803B1
(en)
|
1998-09-16 |
2001-01-16 |
Vsli Technology |
Integrated circuit device interconnection techniques
|
|
US6037216A
(en)
|
1998-11-02 |
2000-03-14 |
Vanguard International Semiconductor Corporation |
Method for simultaneously fabricating capacitor structures, for giga-bit DRAM cells, and peripheral interconnect structures, using a dual damascene process
|
|
TW389993B
(en)
|
1998-11-18 |
2000-05-11 |
United Microelectronics Corp |
Method for producing thin film resistance of dual damascene interconnect
|
|
JP2000159698A
(ja)
*
|
1998-11-30 |
2000-06-13 |
Matsushita Electric Ind Co Ltd |
芳香族メチリデン化合物、それを製造するための芳香族アルデヒド化合物、及びそれらの製造方法
|
|
US6303423B1
(en)
*
|
1998-12-21 |
2001-10-16 |
Megic Corporation |
Method for forming high performance system-on-chip using post passivation process
|
|
US6320244B1
(en)
|
1999-01-12 |
2001-11-20 |
Agere Systems Guardian Corp. |
Integrated circuit device having dual damascene capacitor
|
|
US6346454B1
(en)
*
|
1999-01-12 |
2002-02-12 |
Agere Systems Guardian Corp. |
Method of making dual damascene interconnect structure and metal electrode capacitor
|
|
US6365327B1
(en)
|
1999-08-30 |
2002-04-02 |
Agere Systems Guardian Corp. |
Process for manufacturing in integrated circuit including a dual-damascene structure and an integrated circuit
|
|
US6313025B1
(en)
|
1999-08-30 |
2001-11-06 |
Agere Systems Guardian Corp. |
Process for manufacturing an integrated circuit including a dual-damascene structure and an integrated circuit
|
|
US6281134B1
(en)
|
1999-10-22 |
2001-08-28 |
United Microelectronics Corp. |
Method for combining logic circuit and capacitor
|
|
US6228711B1
(en)
*
|
1999-11-30 |
2001-05-08 |
United Microelectronics Corp. |
Method of fabricating dynamic random access memory
|
|
US6383858B1
(en)
*
|
2000-02-16 |
2002-05-07 |
Agere Systems Guardian Corp. |
Interdigitated capacitor structure for use in an integrated circuit
|
|
US6664185B1
(en)
*
|
2002-04-25 |
2003-12-16 |
Advanced Micro Devices, Inc. |
Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect
|