JP2003204043A5 - - Google Patents

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Publication number
JP2003204043A5
JP2003204043A5 JP2002065270A JP2002065270A JP2003204043A5 JP 2003204043 A5 JP2003204043 A5 JP 2003204043A5 JP 2002065270 A JP2002065270 A JP 2002065270A JP 2002065270 A JP2002065270 A JP 2002065270A JP 2003204043 A5 JP2003204043 A5 JP 2003204043A5
Authority
JP
Japan
Prior art keywords
insulating film
film
hole
lower electrode
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002065270A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003204043A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002065270A priority Critical patent/JP2003204043A/ja
Priority claimed from JP2002065270A external-priority patent/JP2003204043A/ja
Priority to US10/277,877 priority patent/US20030089938A1/en
Publication of JP2003204043A publication Critical patent/JP2003204043A/ja
Publication of JP2003204043A5 publication Critical patent/JP2003204043A5/ja
Withdrawn legal-status Critical Current

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JP2002065270A 2001-10-24 2002-03-11 半導体装置及びその製造方法 Withdrawn JP2003204043A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002065270A JP2003204043A (ja) 2001-10-24 2002-03-11 半導体装置及びその製造方法
US10/277,877 US20030089938A1 (en) 2001-10-24 2002-10-23 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-327022 2001-10-24
JP2001327022 2001-10-24
JP2002065270A JP2003204043A (ja) 2001-10-24 2002-03-11 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003204043A JP2003204043A (ja) 2003-07-18
JP2003204043A5 true JP2003204043A5 (enExample) 2005-09-08

Family

ID=26624083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002065270A Withdrawn JP2003204043A (ja) 2001-10-24 2002-03-11 半導体装置及びその製造方法

Country Status (2)

Country Link
US (1) US20030089938A1 (enExample)
JP (1) JP2003204043A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4015981B2 (ja) * 2003-09-22 2007-11-28 沖電気工業株式会社 強誘電体素子及びその製造方法
JP4526421B2 (ja) * 2005-03-14 2010-08-18 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
WO2008105100A1 (ja) 2007-02-28 2008-09-04 Fujitsu Limited 半導体装置及びその製造方法
WO2008114423A1 (ja) 2007-03-20 2008-09-25 Fujitsu Microelectronics Limited 半導体装置およびその製造方法
US8133368B2 (en) 2008-10-31 2012-03-13 Applied Materials, Inc. Encapsulated sputtering target

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3045928B2 (ja) * 1994-06-28 2000-05-29 松下電子工業株式会社 半導体装置およびその製造方法
US5691219A (en) * 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
EP0837504A3 (en) * 1996-08-20 1999-01-07 Ramtron International Corporation Partially or completely encapsulated ferroelectric device
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법

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