JP4612190B2 - 低汚染高密度プラズマ・エッチング・チャンバおよびその製造方法 - Google Patents

低汚染高密度プラズマ・エッチング・チャンバおよびその製造方法 Download PDF

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Publication number
JP4612190B2
JP4612190B2 JP2000572891A JP2000572891A JP4612190B2 JP 4612190 B2 JP4612190 B2 JP 4612190B2 JP 2000572891 A JP2000572891 A JP 2000572891A JP 2000572891 A JP2000572891 A JP 2000572891A JP 4612190 B2 JP4612190 B2 JP 4612190B2
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Japan
Prior art keywords
chamber
liner
support
plasma processing
processing chamber
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Expired - Fee Related
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JP2000572891A
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English (en)
Japanese (ja)
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JP2002533911A5 (https=
JP2002533911A (ja
Inventor
トーマス， イー． ウィッカー，
ロバート， エイ． マラシュチン，
ウイリアム， エス． ケネディー，
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12347—Plural layers discontinuously bonded [e.g., spot-weld, mechanical fastener, etc.]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2000572891A 1998-09-25 1999-09-24 低汚染高密度プラズマ・エッチング・チャンバおよびその製造方法 Expired - Fee Related JP4612190B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/161,074 US6129808A (en) 1998-03-31 1998-09-25 Low contamination high density plasma etch chambers and methods for making the same
US09/161,074 1998-09-25
PCT/US1999/020890 WO2000019481A2 (en) 1998-09-25 1999-09-24 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate

Publications (3)

Publication Number Publication Date
JP2002533911A JP2002533911A (ja) 2002-10-08
JP2002533911A5 JP2002533911A5 (https=) 2006-11-09
JP4612190B2 true JP4612190B2 (ja) 2011-01-12

Family

ID=22579708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000572891A Expired - Fee Related JP4612190B2 (ja) 1998-09-25 1999-09-24 低汚染高密度プラズマ・エッチング・チャンバおよびその製造方法

Country Status (10)

Country Link
US (3) US6129808A (https=)
EP (1) EP1145273B1 (https=)
JP (1) JP4612190B2 (https=)
KR (1) KR100566908B1 (https=)
CN (1) CN1328755C (https=)
AU (1) AU1440100A (https=)
DE (1) DE69928289T2 (https=)
RU (1) RU2237314C2 (https=)
TW (1) TW460972B (https=)
WO (1) WO2000019481A2 (https=)

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* Cited by examiner, † Cited by third party
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