JP4426342B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP4426342B2 JP4426342B2 JP2004064628A JP2004064628A JP4426342B2 JP 4426342 B2 JP4426342 B2 JP 4426342B2 JP 2004064628 A JP2004064628 A JP 2004064628A JP 2004064628 A JP2004064628 A JP 2004064628A JP 4426342 B2 JP4426342 B2 JP 4426342B2
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- 238000012545 processing Methods 0.000 title claims description 306
- 238000012546 transfer Methods 0.000 description 86
- 238000000034 method Methods 0.000 description 59
- 230000008569 process Effects 0.000 description 58
- 239000007789 gas Substances 0.000 description 57
- 235000012431 wafers Nutrition 0.000 description 47
- 238000005530 etching Methods 0.000 description 26
- 238000012423 maintenance Methods 0.000 description 24
- 230000002093 peripheral effect Effects 0.000 description 23
- 238000009434 installation Methods 0.000 description 20
- 238000004380 ashing Methods 0.000 description 15
- 239000003507 refrigerant Substances 0.000 description 14
- 239000012530 fluid Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 9
- 238000003825 pressing Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
各処理室の取り付け後、それぞれの処理室において安定して所期の性能を実現するための構成については考慮が足らなかった。すなわち、各処理室を取り付け後、取り付け前の処理室とは構成が異なる場合、取り付けた処理室毎に所期の性能が得られるように取り付け後の調整を行う必要が有り、着脱あるいはメンテナンスのための時間が長くなり、装置の稼働効率が低下してしまうという問題については考慮されていなかった。
前記真空容器内の前記試料台上方に配置されその内側で前記プラズマが形成される放電室と、
この放電室の下方の前記真空容器内に配置され前記放電室と連通する真空室と、
前記放電室内の前記プラズマが形成される空間の周囲を囲んでこの放電室の内側壁を構成する第1の側壁部材と、
前記真空容器の内側に配置され前記試料台の周囲で前記第1の側壁部材の下方でこれと隣接して配置され前記真空室の内側面を構成する第2の側壁部材と、
前記放電室の外部から前記第1の側壁部材の温度を調節する第1の温度調節手段と、
前記第2の側壁部材の温度を前記第1の側壁部材の温度より低い温度に調節する第2の温度調節手段と、
前記第2の側壁の表面と接して減圧される前記真空容器の内側と外側の大気側とを封止するシールとを備え、
このシールの内側で隣接する前記第1の側壁部材と第2の側壁部材との間が減圧され、前記第2の側壁部材の前記シールの大気側の部分により前記真空室の大気側に配置された前記第2の温度調節手段と前記第2の側壁部材とが熱的に接続される真空処理装置とした。
102…処理ブロック
103,104…処理ユニット
105…搬送ユニット
106…フレーム
107…制御ユニット
108…筐体
109…ウエハカセット
110…ダミーカセット
111…位置合せ部
113…ロック室
201…接続インターフェース
202…表示部
203…供給路
401,402…アクセスドア
500…処理室部
501…プロセスガスライン
502…プロセスガス遮断バルブ
504…試料台
506…試料搬送装置
507…排気バルブ
508…排気ポンプ
509,510…内側チャンバ
511,512…外側チャンバ
513…プロセスゲートバルブ
514…大気ゲートバルブ
515…大気開放バルブ
520…支持梁
521…駆動手段
522…駆動手段
523…支持ベース部材
524…外側蓋。
Claims (3)
- その内側が減圧される真空容器と、この真空容器内に配置されその上に処理対象の試料が載置される試料台とを備え、前記真空容器内の前記試料台の上方の空間にプラズマを形成して前記試料を処理する真空処理装置であって、
前記真空容器内の前記試料台上方に配置されその内側で前記プラズマが形成される放電室と、
この放電室の下方の前記真空容器内に配置され前記放電室と連通する真空室と、
前記放電室内の前記プラズマが形成される空間の周囲を囲んでこの放電室の内側壁を構成する第1の側壁部材と、
前記真空容器の内側に配置され前記試料台の周囲で前記第1の側壁部材の下方でこれと隣接して配置され前記真空室の内側面を構成する第2の側壁部材と、
前記放電室の外部から前記第1の側壁部材の温度を調節する第1の温度調節手段と、
前記第2の側壁部材の温度を前記第1の側壁部材の温度より低い温度に調節する第2の温度調節手段と、
前記第2の側壁の表面と接して減圧される前記真空容器の内側と外側の大気側とを封止するシールとを備え、
このシールの内側で隣接する前記第1の側壁部材と第2の側壁部材との間が減圧され、前記第2の側壁部材の前記シールの大気側の部分により前記真空室の大気側に配置された前記第2の温度調節手段と前記第2の側壁部材とが熱的に接続される真空処理装置。 - 請求項1に記載の真空処理装置であって、前記第2の側壁部材が前記真空容器と空間をあけてその内側に配置された真空処理装置。
- その内側が減圧される真空容器と、この真空容器内に配置されプラズマが形成される空間の内部に配置されその上に前記プラズマを用いた処理の対象である試料が載置される試料台と、
前記空間の内側壁を構成する第1の側壁部材と、
前記真空容器を構成する部材の内側で前記第1の側壁部材の下端部の下方でこれに隣接して配置され前記空間の内側壁を構成する第2の側壁部材と、
前記空間の外部から第1の側壁部材の温度を調節する第1の温度調節手段と、
前記真空室の大気側に配置され前記第2の側壁部材の温度を前記第1の側壁部材より低い温度に調節する第2の温度調節手段と、
前記第2の側壁部材の表面と接して減圧される前記真空容器の内側と外側の大気側とを封止するシールとを備え、
このシールの内側で隣接する前記第1の側壁部材と第2の側壁部材との間が減圧され前記シールの大気側で前記第2の温度調節手段と前記第2の側壁部材とが熱的に接続される真空処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004064628A JP4426342B2 (ja) | 2004-03-08 | 2004-03-08 | 真空処理装置 |
US10/928,259 US7416633B2 (en) | 2004-03-08 | 2004-08-30 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004064628A JP4426342B2 (ja) | 2004-03-08 | 2004-03-08 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005252200A JP2005252200A (ja) | 2005-09-15 |
JP4426342B2 true JP4426342B2 (ja) | 2010-03-03 |
Family
ID=34909365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004064628A Expired - Lifetime JP4426342B2 (ja) | 2004-03-08 | 2004-03-08 | 真空処理装置 |
Country Status (2)
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US (1) | US7416633B2 (ja) |
JP (1) | JP4426342B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7682454B2 (en) * | 2003-08-07 | 2010-03-23 | Sundew Technologies, Llc | Perimeter partition-valve with protected seals and associated small size process chambers and multiple chamber systems |
US20050183824A1 (en) * | 2004-02-25 | 2005-08-25 | Advanced Display Process Engineering Co., Ltd. | Apparatus for manufacturing flat-panel display |
JP4878900B2 (ja) * | 2006-04-12 | 2012-02-15 | 東京応化工業株式会社 | 基板処理装置 |
JP5260981B2 (ja) * | 2008-02-22 | 2013-08-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP2009226418A (ja) * | 2008-03-19 | 2009-10-08 | Hidaka Seiki Kk | サクション装置及び熱交換器用フィンの製造装置 |
KR101136728B1 (ko) * | 2010-10-18 | 2012-04-20 | 주성엔지니어링(주) | 기판처리장치와 그의 분해 및 조립방법 |
US8826857B2 (en) * | 2011-11-21 | 2014-09-09 | Lam Research Corporation | Plasma processing assemblies including hinge assemblies |
US9181788B2 (en) | 2012-07-27 | 2015-11-10 | Novas Energy Group Limited | Plasma source for generating nonlinear, wide-band, periodic, directed, elastic oscillations and a system and method for stimulating wells, deposits and boreholes using the plasma source |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06267808A (ja) | 1993-03-15 | 1994-09-22 | Hitachi Ltd | チャンバ接続用ガイド機構付きマルチチャンバ装置 |
US6129808A (en) | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
JP2000173986A (ja) | 1998-12-01 | 2000-06-23 | Hitachi Ltd | エッチング装置 |
US20020069970A1 (en) * | 2000-03-07 | 2002-06-13 | Applied Materials, Inc. | Temperature controlled semiconductor processing chamber liner |
-
2004
- 2004-03-08 JP JP2004064628A patent/JP4426342B2/ja not_active Expired - Lifetime
- 2004-08-30 US US10/928,259 patent/US7416633B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7416633B2 (en) | 2008-08-26 |
US20050194093A1 (en) | 2005-09-08 |
JP2005252200A (ja) | 2005-09-15 |
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