JP4426343B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP4426343B2 JP4426343B2 JP2004064638A JP2004064638A JP4426343B2 JP 4426343 B2 JP4426343 B2 JP 4426343B2 JP 2004064638 A JP2004064638 A JP 2004064638A JP 2004064638 A JP2004064638 A JP 2004064638A JP 4426343 B2 JP4426343 B2 JP 4426343B2
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- JP
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- Prior art keywords
- chamber
- processing
- wall member
- flange portion
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012545 processing Methods 0.000 title claims description 325
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 238000003825 pressing Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 description 88
- 238000000034 method Methods 0.000 description 60
- 230000008569 process Effects 0.000 description 59
- 239000007789 gas Substances 0.000 description 58
- 235000012431 wafers Nutrition 0.000 description 48
- 238000005530 etching Methods 0.000 description 26
- 238000012423 maintenance Methods 0.000 description 26
- 238000009434 installation Methods 0.000 description 18
- 238000004380 ashing Methods 0.000 description 15
- 239000003507 refrigerant Substances 0.000 description 15
- 239000012530 fluid Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 10
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000007689 inspection Methods 0.000 description 6
- 230000003993 interaction Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32807—Construction (includes replacing parts of the apparatus)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
102…処理ブロック
103,104…処理ユニット
105…搬送ユニット
106…フレーム
107…制御ユニット
108…筐体
109…ウエハカセット
110…ダミーカセット
111…位置合せ部
113…ロック室
201…接続インターフェース
202…表示部
203…供給路
401,402…アクセスドア
500…処理室部
501…プロセスガスライン
502…プロセスガス遮断バルブ
504…試料台
506…試料搬送装置
507…排気バルブ
508…排気ポンプ
509,510…内側チャンバ
511,512…外側チャンバ
513…プロセスゲートバルブ
514…大気ゲートバルブ
515…大気開放バルブ
520…支持梁
521…駆動手段
522…駆動手段
523…支持ベース部材
524…外側蓋。
Claims (5)
- 真空容器の内部に配置されその上に処理対象の試料が載置される試料台と、
この試料台と前記真空容器の側壁部材との間で試料台の側方を囲んで且つ側壁部材と空間を空けて配置されその内側で形成されるプラズマと面する円筒形状の内側壁部材と、
この内側壁部材の上端部の周縁に配置され外周側に延在するフランジ部と、
前記真空容器の内側を減圧するための排気手段と、
前記内側壁部材の前記フランジ部の上方に配置され前記真空容器内が減圧された状態で前記フランジ部の上面に対して下方に押圧する力とともに前記真空容器の側壁部材に対して下方に押圧する力を伝達して前記真空容器の内部と外部との間を封止する上方の部材と、
前記真空容器の側壁部材の内側に配置され前記内側壁部材の下端部下方でこれと隣合って位置する下方の部材とを備え、
前記内側壁部材が前記フランジ部の上面及びこれと接する前記上方の部材とを介して前記上方の部材内に配置されて前記内側壁部材を冷却する温度調節手段と熱的に接続されたプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置であって、前記フランジ部上に配置され前記上方の部材の下面と前記フランジ部上面との間で前記力を受けて前記真空容器の減圧される内側と外側とを封止するシールとを備えたプラズマ処理装置。
- 請求項1または2に記載のプラズマ処理装置であって、前記フランジ部の下方に配置され前記フランジ部の下面と接して前記内側壁部材を支持する部材と、この部材と前記フランジ部の下面との間で前記力を受けて前記真空容器の減圧される内側と外側とを封止するシールとを備えたプラズマ処理装置。
- 請求項1乃至3の何れか一つに記載のプラズマ処理装置であって、前記真空容器の側壁部材に前記真空容器内が減圧された状態で前記フランジ部の下面から下方に押圧する前記力が伝達され減圧された前記真空容器の内側の真空度が維持されるプラズマ処理装置。
- 請求項1乃至4の何れか一つに記載のプラズマ処理装置であって、前記フランジ部の上面のシールの外側のこのフランジ部と前記上方の部材との間が大気圧にされ、前記温度調節手段が通流する熱交換媒体の通流によって前記内側壁部材の温度を冷却するプラズマ処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004064638A JP4426343B2 (ja) | 2004-03-08 | 2004-03-08 | プラズマ処理装置 |
US10/929,439 US7674351B2 (en) | 2004-03-08 | 2004-08-31 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004064638A JP4426343B2 (ja) | 2004-03-08 | 2004-03-08 | プラズマ処理装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007332391A Division JP4723559B2 (ja) | 2007-12-25 | 2007-12-25 | プラズマ処理装置 |
JP2009245463A Division JP5282008B2 (ja) | 2009-10-26 | 2009-10-26 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005252201A JP2005252201A (ja) | 2005-09-15 |
JP4426343B2 true JP4426343B2 (ja) | 2010-03-03 |
Family
ID=34909367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004064638A Expired - Lifetime JP4426343B2 (ja) | 2004-03-08 | 2004-03-08 | プラズマ処理装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7674351B2 (ja) |
JP (1) | JP4426343B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5329072B2 (ja) * | 2007-12-03 | 2013-10-30 | 東京エレクトロン株式会社 | 処理容器およびプラズマ処理装置 |
JP4723559B2 (ja) * | 2007-12-25 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP5097627B2 (ja) * | 2008-06-27 | 2012-12-12 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP2012023164A (ja) * | 2010-07-14 | 2012-02-02 | Hitachi High-Technologies Corp | プラズマ処理装置 |
CN103477721B (zh) * | 2011-04-04 | 2016-05-18 | 佳能安内华股份有限公司 | 处理装置 |
US8826857B2 (en) * | 2011-11-21 | 2014-09-09 | Lam Research Corporation | Plasma processing assemblies including hinge assemblies |
US9679751B2 (en) | 2012-03-15 | 2017-06-13 | Lam Research Corporation | Chamber filler kit for plasma etch chamber useful for fast gas switching |
US9177763B2 (en) * | 2013-03-15 | 2015-11-03 | Applied Materials, Inc. | Method and apparatus for measuring pressure in a physical vapor deposition chamber |
JP5593418B2 (ja) * | 2013-05-08 | 2014-09-24 | 東京エレクトロン株式会社 | 処理容器およびプラズマ処理装置 |
US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
JP6293499B2 (ja) | 2014-01-27 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP6491891B2 (ja) * | 2015-01-23 | 2019-03-27 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP6609425B2 (ja) | 2015-06-17 | 2019-11-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR20180054754A (ko) * | 2015-09-18 | 2018-05-24 | 엑손모빌 업스트림 리서치 캄파니 | 로봇을 구비한 전기실 |
JP6960737B2 (ja) * | 2017-01-23 | 2021-11-05 | 株式会社日立ハイテク | 真空処理装置 |
JP6902409B2 (ja) * | 2017-06-23 | 2021-07-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6960830B2 (ja) | 2017-11-17 | 2021-11-05 | 株式会社日立ハイテク | 真空処理装置および真空処理装置の運転方法 |
JP6475877B2 (ja) * | 2018-02-14 | 2019-02-27 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP7083463B2 (ja) | 2018-02-23 | 2022-06-13 | 株式会社日立ハイテク | 真空処理装置 |
JP6666630B2 (ja) * | 2019-02-01 | 2020-03-18 | 株式会社日立ハイテク | 真空処理装置 |
JP6750928B2 (ja) * | 2019-03-01 | 2020-09-02 | 株式会社日立ハイテク | 真空処理装置 |
JP6797994B2 (ja) * | 2019-10-28 | 2020-12-09 | 株式会社日立ハイテク | プラズマ処理装置 |
CN213424928U (zh) * | 2021-04-02 | 2021-06-11 | 台湾积体电路制造股份有限公司 | 半导体刻蚀装置 |
CN117878043B (zh) * | 2024-03-11 | 2024-05-17 | 常熟市兆恒众力精密机械有限公司 | 一种真空腔室及使用真空腔室的半导体处理设备 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06267808A (ja) | 1993-03-15 | 1994-09-22 | Hitachi Ltd | チャンバ接続用ガイド機構付きマルチチャンバ装置 |
US5891350A (en) * | 1994-12-15 | 1999-04-06 | Applied Materials, Inc. | Adjusting DC bias voltage in plasma chambers |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
-
2004
- 2004-03-08 JP JP2004064638A patent/JP4426343B2/ja not_active Expired - Lifetime
- 2004-08-31 US US10/929,439 patent/US7674351B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7674351B2 (en) | 2010-03-09 |
JP2005252201A (ja) | 2005-09-15 |
US20050193953A1 (en) | 2005-09-08 |
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