JP6491891B2 - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP6491891B2 JP6491891B2 JP2015010807A JP2015010807A JP6491891B2 JP 6491891 B2 JP6491891 B2 JP 6491891B2 JP 2015010807 A JP2015010807 A JP 2015010807A JP 2015010807 A JP2015010807 A JP 2015010807A JP 6491891 B2 JP6491891 B2 JP 6491891B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
Claims (9)
- 真空搬送室と前記真空搬送室に接続される真空処理室とを有し、前記真空処理室は、排気開口を有するベースプレートと、前記ベースプレートの上に配置され、水平断面の内壁が円形状を有する下部容器と、前記下部容器の上に配置され、被処理物を載置する試料台および前記試料台を支持する支持梁であって、前記試料台の中心軸に対して軸対称に配置された支持梁を備えたリング状の試料台ベースを有する試料台ユニットと、前記試料台ユニットの上に当該試料台ユニットに対して取り外し可能に配置され、水平断面の内壁が円形状を有する上部容器と、前記試料台ベースに固定され、前記試料台ユニットを上下方向及び水平方向に移動可能な移動手段と、を備え、
前記真空搬送室と前記真空処理室との間で前記ベースプレートに対してその位置が固定されたバルブボックスが配置され、
前記真空搬送室は、前記被処理物を前記真空処理室との間で搬送する第1開口部と前記第1開口部を開閉する第1ゲートバルブとを有し、前記真空処理室の前記上部容器は当該上部容器の側壁に配置されその内側と外側とを連通する第2開口部であって、前記被処理物が前記真空搬送室との間で搬送される第2開口部を有し、前記バルブボックスは、前記第2開口部の周囲の前記上部容器の外側の側壁に接続されて内部と外部との間を機密に封止し、その内部の空間に前記第2開口部を開閉する第2ゲートバルブを有すると共に前記第1開口部及び前記第2開口部を連結することを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記ベースプレートの前記排気開口は、前記試料台の真下に配置されていることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記ベースプレートと、前記下部容器と、前記試料台ユニットと、前記上部容器との間は、互いに真空シールされていることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記真空処理装置のメンテナンスの際、前記第1ゲートバルブは閉状態、前記第2ゲートバルブは開状態とされるものであることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記試料台ユニットは、前記移動手段により上方へ持ち上げられた後、水平方向に旋回されるものであることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記真空処理装置のメンテナンスの際、前記上部容器及び前記下部容器は交換されるものであることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記下部容器は内部にインナーを有し、前記真空処理装置のメンテナンスの際、前記下部容器のインナー及び前記上部容器は交換されるものであることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記ベースプレートの排気開口は、前記真空処理装置の稼働中は開状態とされ、前記真空処理装置のメンテナンスの際には閉状態とされるものであることを特徴とする真空処理装置。
- 請求項1記載の真空処理装置において、
前記支持梁の内部に設けられた空洞には、前記被処理物を前記試料台に静電吸着させるため用いられる配線コード、前記試料台へ高周波バイアスを印加するために用いられる配線コード、前記試料台の温度を制御するために用いられる配線コード或いは冷媒用配管、前記試料台の温度を検出するために用いられる配線コードの中の少なくとも一つが配置されていることを特徴とする真空処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015010807A JP6491891B2 (ja) | 2015-01-23 | 2015-01-23 | 真空処理装置 |
US14/846,732 US20160217976A1 (en) | 2015-01-23 | 2015-09-04 | Vacuum processing apparatus |
US17/886,712 US20220389575A1 (en) | 2015-01-23 | 2022-08-12 | Vacuum processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015010807A JP6491891B2 (ja) | 2015-01-23 | 2015-01-23 | 真空処理装置 |
Related Child Applications (1)
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JP2019037175A Division JP6750928B2 (ja) | 2019-03-01 | 2019-03-01 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2016136551A JP2016136551A (ja) | 2016-07-28 |
JP6491891B2 true JP6491891B2 (ja) | 2019-03-27 |
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JP2015010807A Active JP6491891B2 (ja) | 2015-01-23 | 2015-01-23 | 真空処理装置 |
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US (2) | US20160217976A1 (ja) |
JP (1) | JP6491891B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6293499B2 (ja) * | 2014-01-27 | 2018-03-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP6609425B2 (ja) * | 2015-06-17 | 2019-11-20 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP6960737B2 (ja) * | 2017-01-23 | 2021-11-05 | 株式会社日立ハイテク | 真空処理装置 |
JP7201398B2 (ja) * | 2018-11-08 | 2023-01-10 | 株式会社日立ハイテク | プラズマ処理装置 |
JP7296739B2 (ja) * | 2019-01-31 | 2023-06-23 | 東京エレクトロン株式会社 | 処理装置及び処理装置の動作方法 |
JP7490464B2 (ja) | 2020-06-16 | 2024-05-27 | 日本電子株式会社 | 粒子製造装置 |
CN112509901B (zh) | 2020-11-19 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 工艺腔室及半导体工艺设备 |
CN115799035A (zh) * | 2022-12-25 | 2023-03-14 | 北京屹唐半导体科技股份有限公司 | 反应腔室及晶圆刻蚀装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3205312B2 (ja) * | 1999-03-17 | 2001-09-04 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理装置のメンテナンス方法 |
JP4219702B2 (ja) * | 2003-02-06 | 2009-02-04 | 東京エレクトロン株式会社 | 減圧処理装置 |
JP4522795B2 (ja) * | 2003-09-04 | 2010-08-11 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
JP4426343B2 (ja) * | 2004-03-08 | 2010-03-03 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2008112912A (ja) * | 2006-10-31 | 2008-05-15 | Hitachi High-Technologies Corp | プラズマ処理装置 |
US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
TWI408766B (zh) * | 2009-11-12 | 2013-09-11 | Hitachi High Tech Corp | Vacuum processing device |
US10023954B2 (en) * | 2011-09-15 | 2018-07-17 | Applied Materials, Inc. | Slit valve apparatus, systems, and methods |
-
2015
- 2015-01-23 JP JP2015010807A patent/JP6491891B2/ja active Active
- 2015-09-04 US US14/846,732 patent/US20160217976A1/en not_active Abandoned
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2022
- 2022-08-12 US US17/886,712 patent/US20220389575A1/en active Pending
Also Published As
Publication number | Publication date |
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US20160217976A1 (en) | 2016-07-28 |
JP2016136551A (ja) | 2016-07-28 |
US20220389575A1 (en) | 2022-12-08 |
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