JP4601552B2 - 複合誘電体用樹脂組成物および複合誘電体、該誘電体を使用した電気回路基板 - Google Patents
複合誘電体用樹脂組成物および複合誘電体、該誘電体を使用した電気回路基板 Download PDFInfo
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- JP4601552B2 JP4601552B2 JP2005514395A JP2005514395A JP4601552B2 JP 4601552 B2 JP4601552 B2 JP 4601552B2 JP 2005514395 A JP2005514395 A JP 2005514395A JP 2005514395 A JP2005514395 A JP 2005514395A JP 4601552 B2 JP4601552 B2 JP 4601552B2
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- aromatic polymer
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
- H01G4/206—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 inorganic and synthetic material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
- C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
- C08L101/04—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing halogen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/015—Fluoropolymer, e.g. polytetrafluoroethylene [PTFE]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
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- H05K2203/0756—Uses of liquids, e.g. rinsing, coating, dissolving
- H05K2203/0759—Forming a polymer layer by liquid coating, e.g. a non-metallic protective coating or an organic bonding layer
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Description
本発明の複合誘電体用液状組成物において、フッ素化芳香族ポリマーと無機誘電体の含有量は、フッ素化芳香族ポリマーの100質量部に対して、無機誘電体が100〜2,000質量部の範囲内であることが好ましい。無機誘電体の含有量が100質量部未満では、液状組成物からなる複合誘電体の誘電率が低くなる恐れがある。一方、無機誘電体の含有量が2,000質量部を超えると該組成物の粘度が高くなり、取り扱い性が低下する恐れがある。無機誘電体の含有量のより好ましい下限は、フッ素化芳香族ポリマーの100質量部に対して500質量部以上であり、700質量部以上が最も好ましい。また、無機誘電体の含有量の好ましい上限は、フッ素化芳香族ポリマーの100質量部に対して1,500質量部以下であり、1,000質量部以下であることがさらに好ましい。
本発明の複合誘電体用液状組成物は、フッ素化芳香族ポリマー及び無機誘電体をそれぞれ1種又は2種以上含有することができる。
さらに、本発明のフッ素化芳香族ポリマーは、下記一般式(1)で表される繰り返し単位を含むフッ素原子を有するポリアリールエーテルであることが好ましい。フッ素含有芳香族ポリマーがこのような構造を有するものであると、無機誘電体との相互作用が適度に抑制されると考えられ、複合誘電体用液状組成物作製に支障をきたす現象、例えば大幅な増粘、ゲル化、流動性の損失、凝集等が低減される。よって、より多くの無機誘電体を配合した複合誘電体用液状組成物を作製することができ、複合誘電体としてより高い誘電率を示すものとすることができるだけでなく、粘度を低下させることができるため、複合誘電体を薄膜状に成形することが容易となる。なお、一般式(1)で表される繰り返し単位は、同一でも異なっていてもよく、ブロック状、ランダム状等の何れの形態であってもよい。
また、複合誘電体用液状組成物の安定性を高める、もしくは乾燥性を調整する、もしくは成形物・成形膜の物性を高めるために、いくつかの溶媒を併用した混合溶媒を用いてもよい。
本発明の複合誘電体の用途・機能としては、例えば、バイパスコンデンサー、充電素子、微分素子、終端負荷素子、フィルター、アンテナ、ノイズカット等が挙げられる。
また、本発明の複合誘電体を金属箔等の導電性材料に塗布する、導電性材料と密着させる、導電性材料ではさむ等して製造することができる。
本発明の複合誘電体用液状組成物は広範囲に塗布する、均一に塗布する、特定の部位に塗布する、印刷によりパターンを形成することができる。加えて、小型化、容量密度向上のために薄膜化が可能であることも利点の一つである。
さらに上記電気回路基板を、レーザー、溶剤、エッチング等を用いて穴あけ、パターニング、複合誘電体の除去等の加工をすることができる。
(1)複合誘電体の薄膜(フィルム)の上下にCu箔等の金属箔を貼着してコンデンサを形成する工程、そのコンデンサの上下に配線層を積層して電子回路基板を形成する工程により製造される電子回路基板。
(2)樹脂基板の上、又は、上下両面に貼着した下部電極上に複合誘電体層を形成し、その上に上部電極を貼着してコンデンサを形成する工程、この基板の上、又は、上下両面にコンデンサの形成された樹脂基板に積層・エッチングにより配線層を形成して電子回路基板を形成する工程により製造される電子回路基板。
(3)Cu箔等の金属箔上に誘電体層を形成し、その上にCu箔等の金属箔を貼着してコンデンサを形成する工程、このCu箔等の金属箔上にコンデンサが形成されたもの全体を反転させて、底面にCu箔等の金属箔が貼着した樹脂基板上に積層する工程、その樹脂基板の上下のCu箔等の金属箔のエッチング、配線層の積層・エッチングにより電子回路基板を形成する工程により製造される電子回路基板。
[図2]は本発明の複合誘電体(a)及び該複合誘電体から形成される電気回路用部品(電子素子)(b)を模式的に表すものである。
[図3]は本発明の複合誘電体から形成される電気回路用部品(電子素子)を内部に作り込んだ電子回路基板を模式的に表すものである。
2 接地電極
3 複合誘電体層
4 配線層
5 複合誘電体
6、6’ 電極
7 基板
8 他部品(ICチップ等)
温度計、冷却管、ガス導入管、および攪拌機を備えた反応器に、BPDE16.74部、6−FBA10.14部、炭酸カリウム4.34部および、N−メチル−2−ピロリドン(NMP)90部を仕込んだ。この混合物を60℃に加熱し、5時間反応した。反応終了後、反応溶液をブレンダーで激しく攪拌しながら、1%酢酸水溶液中に注加した。析出した反応物を濾別し、蒸留水及びメタノールで洗浄した後、減圧乾燥して、フッ素化芳香族ポリマー(1)を得た。該ポリマーのガラス転移点温度(Tg)は193℃、数平均分子量(Mn)が72,370、表面抵抗値は1.0×1018Ω/cm2以上であった。
合成例1と同様の反応器に、BPDE16.74部、HF10.5部、炭酸カリウム4.34部、ジメチルアセトアミド90部を仕込んだ。この混合物を80℃に加温し、8時間反応した。反応終了後、合成例1と同様にして、フッ素化芳香族ポリマー(2)を得た。該ポリマーのガラス転移点温度(Tg)は242℃、数平均分子量(Mn)が70,770、表面抵抗値は1.0×1018Ω/cm2以上であった。
合成例1と同様の反応器に、BPDE16.74部、BA5.88部、炭酸カリウム4.34部、ジメチルアセトアミド90部を仕込んだ。この混合物を80℃に加温し、10時間反応した。反応終了後、合成例1と同様にして、フッ素化芳香族ポリマー(3)を得た。該ポリマーのガラス転移点温度(Tg)は180℃、数平均分子量(Mn)が62,750、表面抵抗値は1.0×1018Ω/cm2以上であった。
本発明にかかる複合誘電体用液状組成物として、表1に記載した配合量でフッ素化芳香族ポリマー、有機溶剤、分散剤、さらに無機誘電体の順に配合して、ケミスターラーにより均一に混合して、液状組成物を得た。また、比較の液状組成物として、表2に記載した配合量で同様に混合して組成物を得た。
次に、あらかじめ白金膜を形成した、ガラス板上にスピンコーターにより上記の組成物を塗布した後、室温で30分間乾燥後、さらに所定温度のオーブン中で乾燥させ、厚み20μmの複合誘電体を得た。さらに、複合誘電体の表面にイオンスパッタにより白金膜を形成して、評価用の複合誘電体を作製した。この複合誘電体を以下の方法により評価した。その結果を表3および表4に記載した。
誘電特性
得られた各複合誘電体をインピーダンス・アナライザにより比誘電率および誘電正接を測定した。
(2)耐熱特性
得られた各複合誘電体をサーマルアナライザ(TG−DTA分析)により、300℃までの減量率を測定した。
吸湿特性
得られた各複合誘電体をPCT試験(135℃、3気圧、2時間)を行い、試験後の吸湿率を測定した。
SrTiO3:平均粒子径1.5μm、比表面積7m2/g
BYK W9010:商品名、ビックケミージャパン社製
フッ素樹脂
YD−127:商品名、東都化成社製、ビスフェノールA型エポキシ樹脂
MT−500:商品名、新日本理化社製、メチルテトラヒドロ無水フタル酸
ここでいう成膜性が悪いとは、複合誘電体用液状組成物の粘度が不適当、分散状態が悪い等で膜化できない又は成形した膜がもろい等で膜状態を維持できないことを指す。
Claims (6)
- 無機誘電体とフッ素化芳香族ポリマーを含有し、
該無機誘電体が、該フッ素化芳香族ポリマー100質量部に対して、700〜2000質量部の範囲にあり、
該フッ素化芳香族ポリマーは、20℃〜80℃の反応温度で合成されたものであって、下記一般式(1)で表される繰り返し単位を含むものであり、該一般式(1)で表される繰り返し単位のうち少なくとも1つが9,9−ビス(4−ヒドロキシフェニル)フルオレン骨格を含む
ことを特徴とする複合誘電体用液状組成物。
構造式群(2)
構造式(4−6)
構造式群(3)
- 前記フッ素化芳香族ポリマーは、前記一般式(1)におけるXが、ジフェニルエーテル鎖、ビスフェノールA鎖、ビスフェノールF鎖、又は、フルオレン鎖である
ことを特徴とする請求項1に記載の複合誘電体用液状組成物。 - 前記フッ素化芳香族ポリマーは、数平均分子量(Mn)が10000〜200000である
ことを特徴とする請求項1又は2に記載の複合誘電体用液状組成物。 - 請求項1〜3のいずれかに記載の複合誘電体用液状組成物を用いてなる複合誘電体。
- 前記複合誘電体は、厚みが0.1〜100μmであることを特徴とする請求項4に記載の複合誘電体。
- 請求項4又は5に記載の複合誘電体を構成部位として含む電気回路基板。
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JP2003338973 | 2003-09-30 | ||
JP2003338973 | 2003-09-30 | ||
PCT/JP2004/013764 WO2005033209A1 (ja) | 2003-09-30 | 2004-09-21 | 複合誘電体用樹脂組成物および複合誘電体、該誘電体を使用した電気回路基板 |
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JPWO2005033209A1 JPWO2005033209A1 (ja) | 2006-12-14 |
JP4601552B2 true JP4601552B2 (ja) | 2010-12-22 |
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US (1) | US7632884B2 (ja) |
EP (1) | EP1669412A1 (ja) |
JP (1) | JP4601552B2 (ja) |
KR (1) | KR100884511B1 (ja) |
CN (1) | CN100582167C (ja) |
TW (1) | TW200513494A (ja) |
WO (1) | WO2005033209A1 (ja) |
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2004
- 2004-09-21 WO PCT/JP2004/013764 patent/WO2005033209A1/ja active Application Filing
- 2004-09-21 CN CN200480028531A patent/CN100582167C/zh not_active Expired - Fee Related
- 2004-09-21 JP JP2005514395A patent/JP4601552B2/ja not_active Expired - Fee Related
- 2004-09-21 EP EP04787947A patent/EP1669412A1/en not_active Withdrawn
- 2004-09-21 KR KR1020067006140A patent/KR100884511B1/ko not_active IP Right Cessation
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101452594B1 (ko) | 2012-12-26 | 2014-10-21 | 주식회사 두산 | 수지 조성물 및 이를 포함하는 금속박 적층체 |
Also Published As
Publication number | Publication date |
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TWI304830B (ja) | 2009-01-01 |
CN100582167C (zh) | 2010-01-20 |
JPWO2005033209A1 (ja) | 2006-12-14 |
WO2005033209A1 (ja) | 2005-04-14 |
TW200513494A (en) | 2005-04-16 |
KR20060097719A (ko) | 2006-09-14 |
US20050101714A1 (en) | 2005-05-12 |
CN1860184A (zh) | 2006-11-08 |
EP1669412A1 (en) | 2006-06-14 |
KR100884511B1 (ko) | 2009-02-18 |
US7632884B2 (en) | 2009-12-15 |
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