JP4593126B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4593126B2
JP4593126B2 JP2004041009A JP2004041009A JP4593126B2 JP 4593126 B2 JP4593126 B2 JP 4593126B2 JP 2004041009 A JP2004041009 A JP 2004041009A JP 2004041009 A JP2004041009 A JP 2004041009A JP 4593126 B2 JP4593126 B2 JP 4593126B2
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JP
Japan
Prior art keywords
region
potential
semiconductor layer
semiconductor
island
Prior art date
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Expired - Lifetime
Application number
JP2004041009A
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English (en)
Japanese (ja)
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JP2005235892A (ja
JP2005235892A5 (OSRAM
Inventor
和宏 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2004041009A priority Critical patent/JP4593126B2/ja
Priority to TW093123338A priority patent/TWI249811B/zh
Priority to US10/919,405 priority patent/US7741695B2/en
Priority to IT000595A priority patent/ITTO20040595A1/it
Priority to CNB2004100786326A priority patent/CN100352058C/zh
Priority to DE102004059627A priority patent/DE102004059627B4/de
Priority to KR1020040104733A priority patent/KR100589708B1/ko
Publication of JP2005235892A publication Critical patent/JP2005235892A/ja
Publication of JP2005235892A5 publication Critical patent/JP2005235892A5/ja
Application granted granted Critical
Publication of JP4593126B2 publication Critical patent/JP4593126B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0188—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004041009A 2004-02-18 2004-02-18 半導体装置 Expired - Lifetime JP4593126B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004041009A JP4593126B2 (ja) 2004-02-18 2004-02-18 半導体装置
TW093123338A TWI249811B (en) 2004-02-18 2004-08-04 Semiconductor device
US10/919,405 US7741695B2 (en) 2004-02-18 2004-08-17 Semiconductor device
IT000595A ITTO20040595A1 (it) 2004-02-18 2004-09-09 Dispositivo a semiconduttore
CNB2004100786326A CN100352058C (zh) 2004-02-18 2004-09-14 半导体器件
DE102004059627A DE102004059627B4 (de) 2004-02-18 2004-12-10 Halbleitervorrichtung mit einem Hochpotentialinselbereich
KR1020040104733A KR100589708B1 (ko) 2004-02-18 2004-12-13 반도체장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004041009A JP4593126B2 (ja) 2004-02-18 2004-02-18 半導体装置

Publications (3)

Publication Number Publication Date
JP2005235892A JP2005235892A (ja) 2005-09-02
JP2005235892A5 JP2005235892A5 (OSRAM) 2006-08-31
JP4593126B2 true JP4593126B2 (ja) 2010-12-08

Family

ID=34836400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004041009A Expired - Lifetime JP4593126B2 (ja) 2004-02-18 2004-02-18 半導体装置

Country Status (7)

Country Link
US (1) US7741695B2 (OSRAM)
JP (1) JP4593126B2 (OSRAM)
KR (1) KR100589708B1 (OSRAM)
CN (1) CN100352058C (OSRAM)
DE (1) DE102004059627B4 (OSRAM)
IT (1) ITTO20040595A1 (OSRAM)
TW (1) TWI249811B (OSRAM)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4832841B2 (ja) * 2005-09-22 2011-12-07 三菱電機株式会社 半導体装置
US7642617B2 (en) * 2005-09-28 2010-01-05 Agere Systems Inc. Integrated circuit with depletion mode JFET
JP4783652B2 (ja) * 2006-03-20 2011-09-28 株式会社リコー 高効率電源回路および該高効率電源回路を組み込んだ電子機器
US8445947B2 (en) * 2008-07-04 2013-05-21 Stmicroelectronics (Rousset) Sas Electronic circuit having a diode-connected MOS transistor with an improved efficiency
JP5136544B2 (ja) * 2009-12-16 2013-02-06 三菱電機株式会社 半導体装置
US8618627B2 (en) * 2010-06-24 2013-12-31 Fairchild Semiconductor Corporation Shielded level shift transistor
JP5719627B2 (ja) * 2011-02-22 2015-05-20 ローム株式会社 地絡保護回路及びこれを用いたスイッチ駆動装置
JP5550681B2 (ja) * 2012-06-19 2014-07-16 三菱電機株式会社 半導体装置
JP5996969B2 (ja) * 2012-08-24 2016-09-21 新電元工業株式会社 高耐圧半導体装置
JP5947151B2 (ja) * 2012-08-24 2016-07-06 新電元工業株式会社 高耐圧半導体装置
JP6319761B2 (ja) * 2013-06-25 2018-05-09 ローム株式会社 半導体装置
CN104426359B (zh) * 2013-09-06 2018-07-06 上海宝芯源功率半导体有限公司 一种集成结型场效应晶体管的自举电路及自举方法
JP6228428B2 (ja) * 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
CN111665669A (zh) * 2015-01-08 2020-09-15 群创光电股份有限公司 显示面板
JP6686721B2 (ja) * 2016-06-15 2020-04-22 富士電機株式会社 半導体集積回路装置
JP6729487B2 (ja) * 2017-05-15 2020-07-22 三菱電機株式会社 半導体装置、半導体装置の製造方法、および電力変換装置
JP7553345B2 (ja) * 2020-12-18 2024-09-18 新電元工業株式会社 電圧変動検出回路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JP2739004B2 (ja) * 1992-01-16 1998-04-08 三菱電機株式会社 半導体装置
US5502632A (en) 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
JP3075892B2 (ja) * 1993-07-09 2000-08-14 株式会社東芝 半導体装置
EP0646965B1 (en) * 1993-09-17 1999-01-07 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration
DE69533309D1 (de) 1995-05-17 2004-09-02 St Microelectronics Srl Laden eines Bootstrap-Kondensators mittels eines lateralen DMOS-Transistors
JP3917211B2 (ja) * 1996-04-15 2007-05-23 三菱電機株式会社 半導体装置
JP3400301B2 (ja) 1997-03-17 2003-04-28 株式会社東芝 高耐圧半導体装置
EP0887932A1 (en) 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Control of the body voltage of a high voltage LDMOS
EP0887931A1 (en) 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Protection circuit for controlling the gate voltage of a high voltage LDMOS transistor
JP3768656B2 (ja) * 1997-09-18 2006-04-19 三菱電機株式会社 半導体装置
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
JP4397602B2 (ja) * 2002-05-24 2010-01-13 三菱電機株式会社 半導体装置
JP4326835B2 (ja) 2003-05-20 2009-09-09 三菱電機株式会社 半導体装置、半導体装置の製造方法及び半導体装置の製造プロセス評価方法
JP3928608B2 (ja) * 2003-09-25 2007-06-13 トヨタ自動車株式会社 薄膜半導体素子

Also Published As

Publication number Publication date
ITTO20040595A1 (it) 2004-12-09
TWI249811B (en) 2006-02-21
TW200529354A (en) 2005-09-01
JP2005235892A (ja) 2005-09-02
CN1658390A (zh) 2005-08-24
DE102004059627B4 (de) 2013-12-12
KR20050082418A (ko) 2005-08-23
DE102004059627A1 (de) 2005-09-08
KR100589708B1 (ko) 2006-06-19
US7741695B2 (en) 2010-06-22
CN100352058C (zh) 2007-11-28
US20050179089A1 (en) 2005-08-18

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