JP4585327B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4585327B2
JP4585327B2 JP2005031999A JP2005031999A JP4585327B2 JP 4585327 B2 JP4585327 B2 JP 4585327B2 JP 2005031999 A JP2005031999 A JP 2005031999A JP 2005031999 A JP2005031999 A JP 2005031999A JP 4585327 B2 JP4585327 B2 JP 4585327B2
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Japan
Prior art keywords
semiconductor device
bonding
boundary
region
bonding pad
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Expired - Lifetime
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JP2005031999A
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English (en)
Japanese (ja)
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JP2006222147A5 (enExample
JP2006222147A (ja
Inventor
昭人 田辺
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2005031999A priority Critical patent/JP4585327B2/ja
Priority to US11/342,527 priority patent/US7294930B2/en
Priority to CNB2006100064634A priority patent/CN100426497C/zh
Publication of JP2006222147A publication Critical patent/JP2006222147A/ja
Publication of JP2006222147A5 publication Critical patent/JP2006222147A5/ja
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Publication of JP4585327B2 publication Critical patent/JP4585327B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
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    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/039—Methods of manufacturing bonding areas involving a specific sequence of method steps
    • H01L2224/0392—Methods of manufacturing bonding areas involving a specific sequence of method steps specifically adapted to include a probing step
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/05553—Shape in top view being rectangular
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/4943—Connecting portions the connecting portions being staggered
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2005031999A 2005-02-08 2005-02-08 半導体装置およびその製造方法 Expired - Lifetime JP4585327B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005031999A JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法
US11/342,527 US7294930B2 (en) 2005-02-08 2006-01-31 Semiconductor device and manufacturing process therefor
CNB2006100064634A CN100426497C (zh) 2005-02-08 2006-02-08 半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005031999A JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法

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JP2006222147A JP2006222147A (ja) 2006-08-24
JP2006222147A5 JP2006222147A5 (enExample) 2007-12-27
JP4585327B2 true JP4585327B2 (ja) 2010-11-24

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JP2005031999A Expired - Lifetime JP4585327B2 (ja) 2005-02-08 2005-02-08 半導体装置およびその製造方法

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US (1) US7294930B2 (enExample)
JP (1) JP4585327B2 (enExample)
CN (1) CN100426497C (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5148825B2 (ja) * 2005-10-14 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4930322B2 (ja) * 2006-11-10 2012-05-16 ソニー株式会社 半導体発光素子、光ピックアップ装置および情報記録再生装置
JP5027605B2 (ja) * 2007-09-25 2012-09-19 パナソニック株式会社 半導体装置
JP5323406B2 (ja) * 2008-06-24 2013-10-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP5160498B2 (ja) * 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5318055B2 (ja) 2010-09-22 2013-10-16 株式会社東芝 半導体装置、及び半導体装置の製造方法
DE102011004106A1 (de) * 2010-12-28 2012-06-28 Robert Bosch Gmbh Leiterplatte, Verfahren zum Herstellen einer Leiterplatte und Prüfvorrichtung zum Prüfen einer Leiterplatte
JP6348009B2 (ja) * 2014-07-15 2018-06-27 ラピスセミコンダクタ株式会社 半導体装置
CN106783802A (zh) * 2016-11-22 2017-05-31 上海华力微电子有限公司 一种芯片中特定电路测试用微型衬垫结构及其制作方法
JP2021150307A (ja) * 2020-03-16 2021-09-27 ソニーセミコンダクタソリューションズ株式会社 半導体装置、半導体装置の製造方法、及び電子機器
US12176320B2 (en) 2021-05-10 2024-12-24 Ap Memory Technology Corporation Semiconductor structure and methods for bonding tested wafers and testing pre-bonded wafers
KR20240129161A (ko) * 2021-11-19 2024-08-27 콜모르겐 코포레이션 솔더 접합 검사 기능부
CN117199054A (zh) * 2022-06-01 2023-12-08 长鑫存储技术有限公司 封装结构及其制作方法、半导体器件
CN118099133A (zh) * 2022-11-15 2024-05-28 长鑫存储技术有限公司 半导体结构

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JPH01129432A (ja) * 1987-11-16 1989-05-22 Nec Corp 集積回路
JPH04215450A (ja) * 1990-12-14 1992-08-06 Mitsubishi Electric Corp 半導体集積回路装置
JPH08115958A (ja) * 1994-08-24 1996-05-07 Nec Corp 半導体装置
JPH09213757A (ja) * 1996-02-07 1997-08-15 Kawasaki Steel Corp ウエハプローブ容易化方法
JP3843624B2 (ja) * 1998-11-27 2006-11-08 松下電器産業株式会社 半導体集積回路装置及び半導体集積回路装置の組立方法
KR100331553B1 (ko) * 1999-09-16 2002-04-06 윤종용 여러번의 프로빙 및 안정된 본딩을 허용하는 패드를 갖는 집적회로 장치
JP2001176876A (ja) * 1999-12-17 2001-06-29 Matsushita Electronics Industry Corp 高耐圧半導体装置
JP2001338955A (ja) * 2000-05-29 2001-12-07 Texas Instr Japan Ltd 半導体装置及びその製造方法
US6563226B2 (en) * 2001-05-23 2003-05-13 Motorola, Inc. Bonding pad
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US6784556B2 (en) * 2002-04-19 2004-08-31 Kulicke & Soffa Investments, Inc. Design of interconnection pads with separated probing and wire bonding regions
JP3724464B2 (ja) * 2002-08-19 2005-12-07 株式会社デンソー 半導体圧力センサ
US6765228B2 (en) * 2002-10-11 2004-07-20 Taiwan Semiconductor Maunfacturing Co., Ltd. Bonding pad with separate bonding and probing areas
JP2006210631A (ja) * 2005-01-28 2006-08-10 Nec Electronics Corp 半導体装置

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Publication number Publication date
US7294930B2 (en) 2007-11-13
US20060186405A1 (en) 2006-08-24
JP2006222147A (ja) 2006-08-24
CN1819168A (zh) 2006-08-16
CN100426497C (zh) 2008-10-15

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