JP4580327B2 - 被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構 - Google Patents

被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構 Download PDF

Info

Publication number
JP4580327B2
JP4580327B2 JP2005336032A JP2005336032A JP4580327B2 JP 4580327 B2 JP4580327 B2 JP 4580327B2 JP 2005336032 A JP2005336032 A JP 2005336032A JP 2005336032 A JP2005336032 A JP 2005336032A JP 4580327 B2 JP4580327 B2 JP 4580327B2
Authority
JP
Japan
Prior art keywords
processed
mounting table
mounting
vacuum
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005336032A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007142267A (ja
JP2007142267A5 (enExample
Inventor
勝 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005336032A priority Critical patent/JP4580327B2/ja
Priority to KR1020060113198A priority patent/KR100856152B1/ko
Priority to US11/560,904 priority patent/US7556246B2/en
Priority to TW095143079A priority patent/TWI392051B/zh
Priority to CN200610149470XA priority patent/CN1971870B/zh
Publication of JP2007142267A publication Critical patent/JP2007142267A/ja
Publication of JP2007142267A5 publication Critical patent/JP2007142267A5/ja
Application granted granted Critical
Publication of JP4580327B2 publication Critical patent/JP4580327B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67253Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2005336032A 2005-11-21 2005-11-21 被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構 Expired - Lifetime JP4580327B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005336032A JP4580327B2 (ja) 2005-11-21 2005-11-21 被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構
KR1020060113198A KR100856152B1 (ko) 2005-11-21 2006-11-16 피처리체의 반출 방법 및 프로그램 기억 매체 및 탑재기구
US11/560,904 US7556246B2 (en) 2005-11-21 2006-11-17 Unloading method of object, program storage medium, and mounting mechanism
TW095143079A TWI392051B (zh) 2005-11-21 2006-11-21 The method of removing the processed body and the program memory medium and the placing mechanism
CN200610149470XA CN1971870B (zh) 2005-11-21 2006-11-21 被处理体的取出方法及载置机构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005336032A JP4580327B2 (ja) 2005-11-21 2005-11-21 被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構

Publications (3)

Publication Number Publication Date
JP2007142267A JP2007142267A (ja) 2007-06-07
JP2007142267A5 JP2007142267A5 (enExample) 2008-12-18
JP4580327B2 true JP4580327B2 (ja) 2010-11-10

Family

ID=38054545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005336032A Expired - Lifetime JP4580327B2 (ja) 2005-11-21 2005-11-21 被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構

Country Status (5)

Country Link
US (1) US7556246B2 (enExample)
JP (1) JP4580327B2 (enExample)
KR (1) KR100856152B1 (enExample)
CN (1) CN1971870B (enExample)
TW (1) TWI392051B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101004434B1 (ko) * 2008-11-26 2010-12-28 세메스 주식회사 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법
JP2010129929A (ja) * 2008-11-28 2010-06-10 Canon Inc 基板保持装置、基板保持方法、露光装置およびデバイス製造方法
DE102009018434B4 (de) * 2009-04-22 2023-11-30 Ev Group Gmbh Aufnahmeeinrichtung zur Aufnahme von Halbleitersubstraten
JP5390266B2 (ja) * 2009-06-01 2014-01-15 東京エレクトロン株式会社 吸着検知解消方法、処理装置、及びコンピュータ読み取り可能な記憶媒体
JP5591563B2 (ja) * 2010-03-10 2014-09-17 日本発條株式会社 位置確認装置
JP5591562B2 (ja) * 2010-03-10 2014-09-17 日本発條株式会社 位置決め装置
TWI460075B (zh) * 2010-11-11 2014-11-11 C Sun Mfg Ltd 壓合機
TWI402171B (zh) * 2010-11-11 2013-07-21 C Sun Mfg Ltd 壓合裝置及其壓合方法
CN102306620B (zh) * 2011-09-01 2013-03-27 清华大学 激光退火片台装置
JP2013145776A (ja) * 2012-01-13 2013-07-25 Disco Abrasive Syst Ltd 搬送方法
PT2891174T (pt) * 2012-08-31 2019-11-20 Semiconductor Tech & Instruments Pte Ltd Sistema e método para correcção automática do desalinhamento rotational de pastilhas em molduras de filme
JP7071118B2 (ja) * 2014-08-19 2022-05-18 ルミレッズ ホールディング ベーフェー ダイレベルのレーザリフトオフ中の機械的損傷を減少させるサファイアコレクタ
EP3295479B1 (en) * 2015-05-13 2018-09-26 Lumileds Holding B.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
JP6659332B2 (ja) * 2015-12-07 2020-03-04 株式会社荏原製作所 基板処理装置、基板処理装置の真空吸着テーブルから基板を脱着する方法、及び、基板処理装置の真空吸着テーブルに基板を載置する方法
WO2017176419A1 (en) * 2016-04-08 2017-10-12 Applied Materials, Inc. Vacuum chuck pressure control system
CN112008636B (zh) * 2020-09-15 2024-09-27 河北三厦科技股份有限公司 一种夹具
KR102604456B1 (ko) * 2021-09-24 2023-11-23 주식회사 기가레인 웨이퍼 디척킹 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812201A (en) * 1986-07-25 1989-03-14 Tokyo Electron Limited Method of ashing layers, and apparatus for ashing layers
US4908095A (en) * 1988-05-02 1990-03-13 Tokyo Electron Limited Etching device, and etching method
US5310453A (en) * 1992-02-13 1994-05-10 Tokyo Electron Yamanashi Limited Plasma process method using an electrostatic chuck
JP3153372B2 (ja) * 1992-02-26 2001-04-09 東京エレクトロン株式会社 基板処理装置
KR100290748B1 (ko) * 1993-01-29 2001-06-01 히가시 데쓰로 플라즈마 처리장치
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
JPH07157117A (ja) * 1993-12-08 1995-06-20 Fuji Photo Film Co Ltd 板状体または箱体の真空チャック装置
TW254030B (en) * 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
JPH0927541A (ja) * 1995-07-10 1997-01-28 Nikon Corp 基板ホルダ
US5923408A (en) * 1996-01-31 1999-07-13 Canon Kabushiki Kaisha Substrate holding system and exposure apparatus using the same
JP2991110B2 (ja) * 1996-05-01 1999-12-20 日本電気株式会社 基板吸着保持装置
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US6089763A (en) 1997-09-09 2000-07-18 Dns Korea Co., Ltd. Semiconductor wafer processing system
KR100257787B1 (ko) * 1997-09-09 2000-06-01 김광교 반도체 제조용 설비의 웨이퍼 슬립 방지방법
JPH11233601A (ja) 1998-02-10 1999-08-27 Hitachi Ltd 静電吸着装置及びそれを用いた試料処理装置
DE69928319T2 (de) * 1998-04-27 2006-04-20 Tokyo Seimitsu Co. Ltd., Mitaka Oberflächenbearbeitungsverfahren und Oberflächenbearbeitungsvorrichtung für Halbleiterscheiben
JP2000183130A (ja) 1998-12-21 2000-06-30 Matsushita Electric Ind Co Ltd ウェハ搬送方法とその装置
US6305677B1 (en) * 1999-03-30 2001-10-23 Lam Research Corporation Perimeter wafer lifting
JP2001338868A (ja) * 2000-03-24 2001-12-07 Nikon Corp 照度計測装置及び露光装置
JP4067307B2 (ja) * 2000-04-27 2008-03-26 株式会社荏原製作所 回転保持装置
KR100939596B1 (ko) * 2001-11-02 2010-02-01 어플라이드 머티어리얼스, 인코포레이티드 단일 웨이퍼 건조기 및 건조 방법
US7750654B2 (en) * 2002-09-02 2010-07-06 Octec Inc. Probe method, prober, and electrode reducing/plasma-etching processing mechanism
US6722642B1 (en) * 2002-11-06 2004-04-20 Tokyo Electron Limited High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism
JP2004193195A (ja) * 2002-12-09 2004-07-08 Shinko Electric Ind Co Ltd 搬送装置
JP2005129837A (ja) * 2003-10-27 2005-05-19 Seiko Epson Corp 基板処理装置及び基板処理方法
US7187188B2 (en) * 2003-12-24 2007-03-06 Cascade Microtech, Inc. Chuck with integrated wafer support
KR20050120282A (ko) * 2004-06-18 2005-12-22 삼성전자주식회사 정전척으로부터 웨이퍼를 리프팅하는 방법
US7292428B2 (en) * 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor

Also Published As

Publication number Publication date
JP2007142267A (ja) 2007-06-07
KR100856152B1 (ko) 2008-09-03
US20070118246A1 (en) 2007-05-24
TWI392051B (zh) 2013-04-01
CN1971870B (zh) 2012-05-23
KR20070053615A (ko) 2007-05-25
US7556246B2 (en) 2009-07-07
CN1971870A (zh) 2007-05-30
TW200731457A (en) 2007-08-16

Similar Documents

Publication Publication Date Title
JP4580327B2 (ja) 被処理体の取り出し方法及びプログラム記憶媒体並びに載置機構
JP5868228B2 (ja) 基板保持装置及び基板保持方法
JP5733300B2 (ja) 基板分離方法、半導体装置の製造方法、基板分離装置、ロードロック装置、及び、基板貼り合わせ装置
KR101190442B1 (ko) 다이 이젝팅 방법, 다이 이젝팅 유닛, 다이 픽업 방법 및 다이 픽업 장치
TWI567863B (zh) Plasma processing device, substrate unloading device and method
JP2005085881A (ja) 基板処理装置および基板処理方法
KR20180007315A (ko) 접합 시스템
TW201611154A (zh) 晶圓負載及卸載
CN111293058A (zh) 静电卡盘的控制系统及其控制方法
JP7333807B2 (ja) ボンディング設備におけるダイ移送のための装置及び方法
JP2008004601A (ja) 基板搬送装置およびそれを用いた基板搬送方法
JP2009071195A (ja) 半導体製造装置及び半導体製造方法
JP4459023B2 (ja) 基板保持装置
JP2002359280A (ja) プレートアセンブリおよびこれを有する加工装置
JP6058386B2 (ja) 加工装置
KR20240003293A (ko) 다이 이젝터와 이를 포함하는 다이 본딩 장치
JP4457351B2 (ja) 基板保持装置
KR20090048202A (ko) 기판 안착 장치 및 기판 안착 방법
JP3867564B2 (ja) 積み重ねワークの分離方法および分離装置
JP2000183130A (ja) ウェハ搬送方法とその装置
JP2008041761A (ja) 被処理物の処理後剥離方法及び設置装置
TWI822220B (zh) 晶圓釋放方法
CN119230470A (zh) 升降针装置、半导体工艺设备及压力控制方法
KR20030014841A (ko) 웨이퍼 리프트 설비
JP4704516B2 (ja) チップ剥離方法、チップ剥離装置、および半導体装置製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081024

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100601

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100531

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100730

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100824

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100827

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130903

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4580327

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250