JP4579376B2 - 露光装置およびデバイス製造方法 - Google Patents

露光装置およびデバイス製造方法 Download PDF

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Publication number
JP4579376B2
JP4579376B2 JP2000183410A JP2000183410A JP4579376B2 JP 4579376 B2 JP4579376 B2 JP 4579376B2 JP 2000183410 A JP2000183410 A JP 2000183410A JP 2000183410 A JP2000183410 A JP 2000183410A JP 4579376 B2 JP4579376 B2 JP 4579376B2
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JP
Japan
Prior art keywords
mask
wafer
manufacturing
exposure apparatus
reference plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000183410A
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English (en)
Japanese (ja)
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JP2002008962A5 (enExample
JP2002008962A (ja
Inventor
信吉 出口
鉄也 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2000183410A priority Critical patent/JP4579376B2/ja
Priority to DE60138509T priority patent/DE60138509D1/de
Priority to US09/881,804 priority patent/US6608666B2/en
Priority to EP01305290A priority patent/EP1168085B1/en
Publication of JP2002008962A publication Critical patent/JP2002008962A/ja
Publication of JP2002008962A5 publication Critical patent/JP2002008962A5/ja
Application granted granted Critical
Publication of JP4579376B2 publication Critical patent/JP4579376B2/ja
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2000183410A 2000-06-19 2000-06-19 露光装置およびデバイス製造方法 Expired - Fee Related JP4579376B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000183410A JP4579376B2 (ja) 2000-06-19 2000-06-19 露光装置およびデバイス製造方法
DE60138509T DE60138509D1 (de) 2000-06-19 2001-06-18 Referenzplatte für einen Belichtungsapparat
US09/881,804 US6608666B2 (en) 2000-06-19 2001-06-18 Reference plate, exposure apparatus, device manufacturing system, device manufacturing method, semiconductor manufacturing factory, and exposure apparatus maintenance method
EP01305290A EP1168085B1 (en) 2000-06-19 2001-06-18 Reference plate for exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000183410A JP4579376B2 (ja) 2000-06-19 2000-06-19 露光装置およびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2002008962A JP2002008962A (ja) 2002-01-11
JP2002008962A5 JP2002008962A5 (enExample) 2007-08-02
JP4579376B2 true JP4579376B2 (ja) 2010-11-10

Family

ID=18684001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000183410A Expired - Fee Related JP4579376B2 (ja) 2000-06-19 2000-06-19 露光装置およびデバイス製造方法

Country Status (4)

Country Link
US (1) US6608666B2 (enExample)
EP (1) EP1168085B1 (enExample)
JP (1) JP4579376B2 (enExample)
DE (1) DE60138509D1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040071161A1 (en) * 2000-06-30 2004-04-15 Tokyo Electron Limited Part maintenance system and part maintenance method of semiconductor processing system
US7095484B1 (en) * 2001-06-27 2006-08-22 University Of South Florida Method and apparatus for maskless photolithography
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
JP2004206702A (ja) * 2002-12-12 2004-07-22 Tokyo Electron Ltd パーツ管理システム及び方法、並びにプログラム及び記憶媒体
JP4101076B2 (ja) * 2003-02-06 2008-06-11 キヤノン株式会社 位置検出方法及び装置
TW201738932A (zh) 2003-10-09 2017-11-01 Nippon Kogaku Kk 曝光裝置及曝光方法、元件製造方法
US20060000814A1 (en) * 2004-06-30 2006-01-05 Bo Gu Laser-based method and system for processing targeted surface material and article produced thereby
JP2006173377A (ja) * 2004-12-16 2006-06-29 Nikon Corp 光学部品及び投影露光装置
JP4923480B2 (ja) * 2005-08-23 2012-04-25 株式会社ニコン 露光装置及びデバイス製造方法、計測部材
KR101435124B1 (ko) * 2008-04-29 2014-08-29 삼성전자 주식회사 노광 장치의 정렬 방법, 이를 이용한 감광막의 노광 방법및 감광막의 노광 방법을 수행하기 위한 노광 장치
NL2002998A1 (nl) 2008-06-18 2009-12-22 Asml Netherlands Bv Lithographic apparatus.
NL2003529A (en) * 2008-10-24 2010-04-27 Asml Netherlands Bv Lithographic apparatus, device manufacturing method and position control method.
JP5355245B2 (ja) * 2009-06-25 2013-11-27 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
JP2015509666A (ja) 2012-03-08 2015-03-30 マッパー・リソグラフィー・アイピー・ビー．ブイ． アライメントセンサーとビーム測定センサーを備えている荷電粒子リソグラフィシステム
EP2823361B1 (en) 2012-03-08 2022-03-02 ASML Netherlands B.V. Lithography system and method for processing a target, such as a wafer
JP7089348B2 (ja) * 2017-07-28 2022-06-22 キヤノン株式会社 インプリント装置、インプリント方法および物品製造方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL301413A (enExample) * 1963-12-05
JPS57119348A (en) * 1981-01-17 1982-07-24 Mitsubishi Electric Corp Hard mask
JPS58214154A (ja) * 1982-06-08 1983-12-13 Nec Corp フオトマスク
JPH0325913A (ja) * 1989-06-23 1991-02-04 Nec Kyushu Ltd 縮小投影型露光装置
JPH0437113A (ja) * 1990-06-01 1992-02-07 Mitsubishi Electric Corp 縮小投影露光装置
KR100254024B1 (ko) * 1990-07-23 2000-06-01 가나이 쓰도무 반도체 장치의 제조 방법
JPH04155813A (ja) * 1990-10-19 1992-05-28 Nec Corp アライメントマーク
US5477309A (en) * 1992-03-09 1995-12-19 Nikon Corporation Alignment apparatus
JP3420314B2 (ja) 1993-12-03 2003-06-23 キヤノン株式会社 位置ずれ計測方法及びそれを用いた計測装置
JPH07249558A (ja) * 1994-03-09 1995-09-26 Nikon Corp 位置合わせ方法
JP3555230B2 (ja) * 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US6018384A (en) * 1994-09-07 2000-01-25 Nikon Corporation Projection exposure system
JP3555208B2 (ja) * 1994-12-14 2004-08-18 株式会社ニコン 露光方法
US5751404A (en) * 1995-07-24 1998-05-12 Canon Kabushiki Kaisha Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates
JP3437352B2 (ja) 1995-10-02 2003-08-18 キヤノン株式会社 照明光学系及び光源装置
US6242792B1 (en) * 1996-07-02 2001-06-05 Denso Corporation Semiconductor device having oblique portion as reflection
JP3428829B2 (ja) 1996-08-27 2003-07-22 キヤノン株式会社 位置合わせ方法及びそれを用いた投影露光装置
KR100197885B1 (ko) * 1996-12-23 1999-06-15 윤종용 노광설비의 기준마크 보호장치
JPH10284412A (ja) * 1997-04-10 1998-10-23 Nikon Corp 外部と光を授受するステージ装置及び投影露光装置
US5981352A (en) * 1997-09-08 1999-11-09 Lsi Logic Corporation Consistent alignment mark profiles on semiconductor wafers using fine grain tungsten protective layer
US5985764A (en) * 1997-12-22 1999-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Layer independent alignment system
JP3090113B2 (ja) * 1998-02-13 2000-09-18 日本電気株式会社 半導体装置の製造方法
US6197481B1 (en) * 1998-09-17 2001-03-06 Taiwan Semiconductor Manufacturing Company Wafer alignment marks protected by photoresist
US6294018B1 (en) * 1999-09-15 2001-09-25 Lucent Technologies Alignment techniques for epitaxial growth processes
US6057206A (en) * 1999-10-01 2000-05-02 Advanced Micro Devices, Inc. Mark protection scheme with no masking
US6417076B1 (en) * 2000-06-05 2002-07-09 Micron Technology, Inc. Automated combi deposition apparatus and method
TW497204B (en) * 2001-02-08 2002-08-01 Mosel Vitelic Inc Method for protecting alignment mark of stepping machine

Also Published As

Publication number Publication date
EP1168085A2 (en) 2002-01-02
EP1168085A3 (en) 2005-12-07
JP2002008962A (ja) 2002-01-11
EP1168085B1 (en) 2009-04-29
US6608666B2 (en) 2003-08-19
DE60138509D1 (de) 2009-06-10
US20020067473A1 (en) 2002-06-06

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