JP4575539B2 - 化学的機械研磨プロセス及びその構成要素 - Google Patents

化学的機械研磨プロセス及びその構成要素 Download PDF

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Publication number
JP4575539B2
JP4575539B2 JP2000035365A JP2000035365A JP4575539B2 JP 4575539 B2 JP4575539 B2 JP 4575539B2 JP 2000035365 A JP2000035365 A JP 2000035365A JP 2000035365 A JP2000035365 A JP 2000035365A JP 4575539 B2 JP4575539 B2 JP 4575539B2
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Japan
Prior art keywords
polishing
layer
slurry
substrate
stop layer
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Expired - Lifetime
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JP2000035365A
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English (en)
Japanese (ja)
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JP2000301454A (ja
JP2000301454A5 (enExample
Inventor
アール． ジン レイモンド
ディー． デイヴィッド ジェフリー
シー． レデカー フレッド
エイチ． オスターヘルド トーマス
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2000301454A5 publication Critical patent/JP2000301454A5/ja
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Publication of JP4575539B2 publication Critical patent/JP4575539B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000035365A 1999-02-11 2000-02-14 化学的機械研磨プロセス及びその構成要素 Expired - Lifetime JP4575539B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11976399P 1999-02-11 1999-02-11
US60/119763 1999-02-11

Publications (3)

Publication Number Publication Date
JP2000301454A JP2000301454A (ja) 2000-10-31
JP2000301454A5 JP2000301454A5 (enExample) 2007-03-01
JP4575539B2 true JP4575539B2 (ja) 2010-11-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000035365A Expired - Lifetime JP4575539B2 (ja) 1999-02-11 2000-02-14 化学的機械研磨プロセス及びその構成要素

Country Status (6)

Country Link
US (1) US6435942B1 (enExample)
EP (1) EP1068928A3 (enExample)
JP (1) JP4575539B2 (enExample)
KR (1) KR20000058021A (enExample)
SG (1) SG87886A1 (enExample)
TW (1) TW457168B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319907A (ja) * 2000-01-18 2001-11-16 Applied Materials Inc ２段階化学機械的研磨プロセスにおける光学的監視方法

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6595831B1 (en) * 1996-05-16 2003-07-22 Ebara Corporation Method for polishing workpieces using fixed abrasives
JP3439402B2 (ja) * 1999-11-05 2003-08-25 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6280288B1 (en) * 2000-02-04 2001-08-28 Norton Company Process for determining optimum grinding conditions
US20020023715A1 (en) * 2000-05-26 2002-02-28 Norio Kimura Substrate polishing apparatus and substrate polishing mehod
US6593240B1 (en) * 2000-06-28 2003-07-15 Infineon Technologies, North America Corp Two step chemical mechanical polishing process
US6609950B2 (en) * 2000-07-05 2003-08-26 Ebara Corporation Method for polishing a substrate
US6699785B2 (en) * 2000-11-18 2004-03-02 Advanced Micro Devices, Inc. Conductor abrasiveless chemical-mechanical polishing in integrated circuit interconnects
DE10103062A1 (de) * 2001-01-24 2002-08-01 Promos Technologies Inc Chemisch-mechanisches Polierverfahren für emulsionsfreie feste Schleifkissen
US6595830B1 (en) * 2001-03-26 2003-07-22 Advanced Micro Devices, Inc. Method of controlling chemical mechanical polishing operations to control erosion of insulating materials
JP2002359216A (ja) * 2001-05-30 2002-12-13 Mitsubishi Electric Corp セリアスラリーを用いた研磨方法および半導体装置の製造方法
US6790768B2 (en) 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
US6811470B2 (en) * 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
JP3530158B2 (ja) * 2001-08-21 2004-05-24 沖電気工業株式会社 半導体装置及びその製造方法
US6677239B2 (en) 2001-08-24 2004-01-13 Applied Materials Inc. Methods and compositions for chemical mechanical polishing
DE10149916B4 (de) * 2001-10-10 2007-01-25 Infineon Technologies Ag Verfahren zum Planarisieren von Prozessflächen in Halbleitereinrichtungen
US6638866B1 (en) * 2001-10-18 2003-10-28 Taiwan Semiconductor Manufacturing Company Chemical-mechanical polishing (CMP) process for shallow trench isolation
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6943114B2 (en) 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
US7131889B1 (en) * 2002-03-04 2006-11-07 Micron Technology, Inc. Method for planarizing microelectronic workpieces
CN1653600A (zh) * 2002-03-13 2005-08-10 Asm努突尔股份有限公司 铜和阻障层之整合化学机械抛光的方法和设备
US6613688B1 (en) * 2002-04-26 2003-09-02 Motorola, Inc. Semiconductor device and process for generating an etch pattern
JP2003318140A (ja) * 2002-04-26 2003-11-07 Applied Materials Inc 研磨方法及び装置
KR100487917B1 (ko) * 2002-05-20 2005-05-06 주식회사 하이닉스반도체 반도체소자의 화학적 기계적 연마방법
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
CN100551623C (zh) * 2003-01-10 2009-10-21 3M创新有限公司 应用于化学机械平面化的垫结构
US7153744B2 (en) * 2003-12-03 2006-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming self-aligned poly for embedded flash
US7906418B2 (en) * 2003-12-03 2011-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having substantially planar contacts and body
KR100570060B1 (ko) * 2003-12-29 2006-04-10 주식회사 하이닉스반도체 반도체소자의 랜딩플러그콘택 형성 방법
US8403727B1 (en) * 2004-03-31 2013-03-26 Lam Research Corporation Pre-planarization system and method
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
KR100614773B1 (ko) * 2004-12-28 2006-08-22 삼성전자주식회사 화학 기계적 연마 방법
WO2006085423A1 (ja) * 2005-02-10 2006-08-17 Nikon Corporation Ｃｍｐ研磨方法、ｃｍｐ研磨装置、ｓｔｉ構造を有する積層基板の製造方法、及び半導体デバイスの製造方法
US7297632B2 (en) * 2005-03-17 2007-11-20 Taiwan Semiconductor Manufacturing Company, Ltd. Scratch reduction for chemical mechanical polishing
US7297047B2 (en) * 2005-12-01 2007-11-20 Applied Materials, Inc. Bubble suppressing flow controller with ultrasonic flow meter
KR100757119B1 (ko) * 2005-12-20 2007-09-10 동부일렉트로닉스 주식회사 상감법에 의한 구리 금속배선의 형성방법
US20070269908A1 (en) * 2006-05-17 2007-11-22 Hsin-Kun Chu Method for in-line controlling hybrid chemical mechanical polishing process
US8114774B2 (en) 2006-06-19 2012-02-14 Nxp B.V. Semiconductor device, and semiconductor device obtained by such a method
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
KR101084676B1 (ko) * 2008-12-03 2011-11-22 주식회사 엘지화학 1차 화학적 기계적 연마용 슬러리 조성물 및 화학적 기계적 연마 방법
US8303375B2 (en) 2009-01-12 2012-11-06 Novaplanar Technology, Inc. Polishing pads for chemical mechanical planarization and/or other polishing methods
CN101786260B (zh) * 2009-01-22 2012-03-28 中芯国际集成电路制造(上海)有限公司 消除浅沟道隔离中角落效应的研磨方法
US20140024293A1 (en) * 2012-07-19 2014-01-23 Jimin Zhang Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing
US10513006B2 (en) 2013-02-04 2019-12-24 Taiwan Semiconductor Manufacturing Co., Ltd. High throughput CMP platform
CN103692327A (zh) * 2013-11-29 2014-04-02 广东鸿泰科技股份有限公司 压铸模具散热筋条的抛光方法
US9227294B2 (en) * 2013-12-31 2016-01-05 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for chemical mechanical polishing
CN103753356A (zh) * 2014-01-21 2014-04-30 曼盛包装（上海）有限公司 一种透明pmma注射成型合模线的抛光消除方法
JP7354131B2 (ja) * 2018-03-13 2023-10-02 アプライド マテリアルズ インコーポレイテッド 化学機械研磨中の振動のモニタリング
US12055821B2 (en) 2020-11-20 2024-08-06 Applied Materials, Inc. Structure and method of bi-layer pixel isolation in advanced LCOS back-plane
US11881539B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having highly reflective pixel via metallization
US11573452B2 (en) 2020-11-20 2023-02-07 Applied Materials, Inc. Method for LCoS DBR multilayer stack protection via sacrificial hardmask for RIE and CMP processes
US11586067B2 (en) 2020-11-20 2023-02-21 Applied Materials, Inc. Structure and method of advanced LCoS back-plane having robust pixel via metallization
US11880052B2 (en) 2020-11-20 2024-01-23 Applied Materials, Inc. Structure and method of mirror grounding in LCoS devices
US11908678B2 (en) * 2021-01-14 2024-02-20 Applied Materials, Inc. Method of CMP integration for improved optical uniformity in advanced LCOS back-plane
US20240359287A1 (en) * 2023-04-27 2024-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device fabrication methods and devices for forming the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2714411B2 (ja) * 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
US5142828A (en) * 1990-06-25 1992-09-01 Microelectronics And Computer Technology Corporation Correcting a defective metallization layer on an electronic component by polishing
GB9105943D0 (en) * 1991-03-20 1991-05-08 Philips Nv A method of manufacturing a semiconductor device
JP3132111B2 (ja) * 1991-11-29 2001-02-05 ソニー株式会社 半導体装置の製造方法及びこれに用いるポリッシュパッド
US5514245A (en) * 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
US5302551A (en) * 1992-05-11 1994-04-12 National Semiconductor Corporation Method for planarizing the surface of an integrated circuit over a metal interconnect layer
US5445996A (en) * 1992-05-26 1995-08-29 Kabushiki Kaisha Toshiba Method for planarizing a semiconductor device having a amorphous layer
US5395801A (en) 1993-09-29 1995-03-07 Micron Semiconductor, Inc. Chemical-mechanical polishing processes of planarizing insulating layers
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3450485B2 (ja) * 1994-02-21 2003-09-22 株式会社東芝 半導体装置の製造方法及び半導体製造装置
US5656554A (en) * 1994-07-29 1997-08-12 International Business Machines Corporation Semiconductor chip reclamation technique involving multiple planarization processes
JPH08139060A (ja) * 1994-11-04 1996-05-31 Ricoh Co Ltd 半導体装置の製造方法及び化学的機械研磨装置
JPH0955362A (ja) * 1995-08-09 1997-02-25 Cypress Semiconductor Corp スクラッチを減少する集積回路の製造方法
JP3072962B2 (ja) * 1995-11-30 2000-08-07 ロデール・ニッタ株式会社 研磨のための被加工物の保持具及びその製法
US5676587A (en) * 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
JPH09199454A (ja) * 1996-01-16 1997-07-31 Toyoda Mach Works Ltd シリコンウエハ加工方法および加工装置
JP3575942B2 (ja) * 1997-02-28 2004-10-13 株式会社東芝 半導体装置の製造方法
JPH10321566A (ja) * 1997-05-19 1998-12-04 Asahi Chem Ind Co Ltd 半導体装置の研磨方法
US6114249A (en) * 1998-03-10 2000-09-05 International Business Machines Corporation Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity
JP2000156360A (ja) * 1998-06-30 2000-06-06 Fujitsu Ltd 半導体装置の製造方法
US6247998B1 (en) * 1999-01-25 2001-06-19 Applied Materials, Inc. Method and apparatus for determining substrate layer thickness during chemical mechanical polishing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319907A (ja) * 2000-01-18 2001-11-16 Applied Materials Inc ２段階化学機械的研磨プロセスにおける光学的監視方法

Also Published As

Publication number Publication date
EP1068928A2 (en) 2001-01-17
JP2000301454A (ja) 2000-10-31
SG87886A1 (en) 2002-04-16
TW457168B (en) 2001-10-01
KR20000058021A (ko) 2000-09-25
US6435942B1 (en) 2002-08-20
EP1068928A3 (en) 2003-08-13

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