JP4565931B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP4565931B2
JP4565931B2 JP2004245893A JP2004245893A JP4565931B2 JP 4565931 B2 JP4565931 B2 JP 4565931B2 JP 2004245893 A JP2004245893 A JP 2004245893A JP 2004245893 A JP2004245893 A JP 2004245893A JP 4565931 B2 JP4565931 B2 JP 4565931B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
main surface
chip
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004245893A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006066551A5 (https=
JP2006066551A (ja
Inventor
道昭 杉山
祐介 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004245893A priority Critical patent/JP4565931B2/ja
Publication of JP2006066551A publication Critical patent/JP2006066551A/ja
Publication of JP2006066551A5 publication Critical patent/JP2006066551A5/ja
Application granted granted Critical
Publication of JP4565931B2 publication Critical patent/JP4565931B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/0711Apparatus therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/331Shapes of die-attach connectors
    • H10W72/332Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5366Shapes of wire connectors the bond wires having kinks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5449Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
JP2004245893A 2004-08-25 2004-08-25 半導体装置の製造方法 Expired - Fee Related JP4565931B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004245893A JP4565931B2 (ja) 2004-08-25 2004-08-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004245893A JP4565931B2 (ja) 2004-08-25 2004-08-25 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006066551A JP2006066551A (ja) 2006-03-09
JP2006066551A5 JP2006066551A5 (https=) 2007-09-27
JP4565931B2 true JP4565931B2 (ja) 2010-10-20

Family

ID=36112766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004245893A Expired - Fee Related JP4565931B2 (ja) 2004-08-25 2004-08-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4565931B2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006028692B4 (de) * 2006-05-19 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
JP6157206B2 (ja) * 2012-11-28 2017-07-05 学校法人早稲田大学 積層構造体の製造方法
JP2017123446A (ja) * 2016-01-08 2017-07-13 株式会社日立製作所 半導体装置および半導体パッケージ装置
KR102495911B1 (ko) * 2016-06-14 2023-02-03 삼성전자 주식회사 반도체 패키지
KR102760431B1 (ko) * 2021-02-25 2025-02-03 창신 메모리 테크놀로지즈 아이엔씨 반도체 구조 및 반도체 구조의 제조 방법
WO2022264822A1 (ja) * 2021-06-14 2022-12-22 株式会社村田製作所 二次電池
CN119314953A (zh) * 2023-07-14 2025-01-14 鹏鼎控股(深圳)股份有限公司 双面塑封结构及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5218234A (en) * 1991-12-23 1993-06-08 Motorola, Inc. Semiconductor device with controlled spread polymeric underfill
JPH07122592A (ja) * 1993-10-27 1995-05-12 Fujitsu Ltd 半導体装置の製造方法並びにその方法に使用する接合樹脂及び樹脂形成装置
JPH08181166A (ja) * 1994-12-22 1996-07-12 Ibiden Co Ltd プリント配線板
JPH09120975A (ja) * 1995-10-24 1997-05-06 Seiko Epson Corp 半導体チップの実装構造
JPH1098077A (ja) * 1996-09-20 1998-04-14 Ricoh Co Ltd 半導体装置の製造方法
JP3390664B2 (ja) * 1997-10-16 2003-03-24 新光電気工業株式会社 フリップチップ実装用基板及びフリップチップ実装構造
JPH11219984A (ja) * 1997-11-06 1999-08-10 Sharp Corp 半導体装置パッケージおよびその製造方法ならびにそのための回路基板
JP3877860B2 (ja) * 1998-03-11 2007-02-07 松下電器産業株式会社 固体撮像素子付半導体装置及び該半導体装置の製造方法
JP2000208544A (ja) * 1999-01-14 2000-07-28 Toshiba Corp ベアicチップおよび半導体装置
JP4361658B2 (ja) * 2000-02-14 2009-11-11 富士通マイクロエレクトロニクス株式会社 実装基板及び実装方法
JP2001244384A (ja) * 2000-02-28 2001-09-07 Matsushita Electric Works Ltd ベアチップ搭載プリント配線基板
JP2001267452A (ja) * 2000-03-16 2001-09-28 Hitachi Ltd 半導体装置
JP2002124538A (ja) * 2000-10-12 2002-04-26 Eastern Co Ltd 回路基板
JP2004063805A (ja) * 2002-07-29 2004-02-26 Sony Corp 半導体装置
JP2004349399A (ja) * 2003-05-21 2004-12-09 Nec Corp 部品実装基板
JP4197140B2 (ja) * 2003-06-19 2008-12-17 パナソニック株式会社 半導体装置

Also Published As

Publication number Publication date
JP2006066551A (ja) 2006-03-09

Similar Documents

Publication Publication Date Title
KR100326822B1 (ko) 감소된 두께를 갖는 반도체 장치 및 그의 제조 방법
US6759737B2 (en) Semiconductor package including stacked chips with aligned input/output pads
US8441113B2 (en) Elimination of RDL using tape base flip chip on flex for die stacking
US6555917B1 (en) Semiconductor package having stacked semiconductor chips and method of making the same
US8525322B1 (en) Semiconductor package having a plurality of input/output members
JP5095074B2 (ja) パッケージ積層構造
US12494414B2 (en) Semiconductor device with through-mold via
JP2001077294A (ja) 半導体装置
US20030166312A1 (en) Methods for assembly and packaging of flip chip configured dice with interposer
KR20150041029A (ko) Bva 인터포저
JPH09331000A (ja) 半導体パッケージ
CN101252115A (zh) 半导体封装及其制造方法和电子系统及其制造方法
JP2001223326A (ja) 半導体装置
KR20050119414A (ko) 에지 패드형 반도체 칩의 스택 패키지 및 그 제조방법
JP4477966B2 (ja) 半導体装置の製造方法
JP4565931B2 (ja) 半導体装置の製造方法
KR100533847B1 (ko) 캐리어 테이프를 이용한 적층형 플립 칩 패키지
JP4544784B2 (ja) 半導体スタックドパッケージ及びその製造方法
JP2004119550A (ja) 半導体装置およびその製造方法
US8975758B2 (en) Semiconductor package having interposer with openings containing conductive layer
JP3968321B2 (ja) 半導体装置およびその製造方法
JP2004079923A (ja) 半導体装置及びその製造方法
JP2001332681A (ja) 半導体装置
KR100370851B1 (ko) 반도체패키지
JP4657581B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070814

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070814

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090814

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091029

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20100528

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100706

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100803

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130813

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees