JP4547237B2 - 真空装置、そのパーティクルモニタ方法及びプログラム - Google Patents

真空装置、そのパーティクルモニタ方法及びプログラム Download PDF

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JP4547237B2
JP4547237B2 JP2004329675A JP2004329675A JP4547237B2 JP 4547237 B2 JP4547237 B2 JP 4547237B2 JP 2004329675 A JP2004329675 A JP 2004329675A JP 2004329675 A JP2004329675 A JP 2004329675A JP 4547237 B2 JP4547237 B2 JP 4547237B2
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JP2005317900A5 (ja
JP2005317900A (ja
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剛 守屋
博之 中山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2004329675A priority Critical patent/JP4547237B2/ja
Priority to CNB2005100601714A priority patent/CN100378925C/zh
Priority to US11/091,417 priority patent/US7464581B2/en
Publication of JP2005317900A publication Critical patent/JP2005317900A/ja
Priority to US11/680,426 priority patent/US7883779B2/en
Priority to US11/680,315 priority patent/US7458247B2/en
Publication of JP2005317900A5 publication Critical patent/JP2005317900A5/ja
Priority to US12/258,196 priority patent/US7797984B2/en
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Priority to US12/985,099 priority patent/US8854625B2/en
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JP2004329675A 2004-03-29 2004-11-12 真空装置、そのパーティクルモニタ方法及びプログラム Expired - Fee Related JP4547237B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004329675A JP4547237B2 (ja) 2004-03-29 2004-11-12 真空装置、そのパーティクルモニタ方法及びプログラム
US11/091,417 US7464581B2 (en) 2004-03-29 2005-03-29 Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring
CNB2005100601714A CN100378925C (zh) 2004-03-29 2005-03-29 真空装置、其颗粒监控方法、程序以及颗粒监控用窗口部件
US11/680,426 US7883779B2 (en) 2004-03-29 2007-02-28 Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring
US11/680,315 US7458247B2 (en) 2004-03-29 2007-02-28 Vacuum apparatus including a particle monitoring unit, particle monitoring method, and program
US12/258,196 US7797984B2 (en) 2004-03-29 2008-10-24 Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring
US12/985,099 US8854625B2 (en) 2004-03-29 2011-01-05 Vacuum apparatus including a particle monitoring unit, particle monitoring method and program, and window member for use in the particle monitoring

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004096456 2004-03-29
JP2004329675A JP4547237B2 (ja) 2004-03-29 2004-11-12 真空装置、そのパーティクルモニタ方法及びプログラム

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JP2009214301A Division JP2009296006A (ja) 2004-03-29 2009-09-16 パーティクルモニタ窓部材及び窓部材

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JP2005317900A JP2005317900A (ja) 2005-11-10
JP2005317900A5 JP2005317900A5 (ja) 2007-12-27
JP4547237B2 true JP4547237B2 (ja) 2010-09-22

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Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444346C (zh) * 2005-12-08 2008-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 一种半导体刻蚀设备中控制分子泵的方法
JP4750686B2 (ja) * 2006-12-22 2011-08-17 東京エレクトロン株式会社 半導体製造用の真空装置のクリーニング方法、半導体製造用の真空装置の制御装置および制御プログラムを記憶した記憶媒体
JP5000315B2 (ja) * 2007-01-24 2012-08-15 東ソー・クォーツ株式会社 半導体製造装置用治具の製造方法及び半導体製造装置用治具
JP5193686B2 (ja) * 2008-05-30 2013-05-08 東京エレクトロン株式会社 チャンバの内部状況推定方法及び記憶媒体
JP5609014B2 (ja) * 2009-06-03 2014-10-22 三菱電機株式会社 成膜装置
JP5275188B2 (ja) * 2009-09-18 2013-08-28 東京エレクトロン株式会社 処理開始可否判定方法及び記憶媒体
JP5474609B2 (ja) 2010-03-02 2014-04-16 東京エレクトロン株式会社 パーティクル数計測方法
JP5876248B2 (ja) 2011-08-09 2016-03-02 東京エレクトロン株式会社 パーティクルモニタ方法、パーティクルモニタ装置
CN104428271B (zh) * 2012-07-05 2017-03-08 株式会社尼康 多晶CaF2构件、用于等离子体处理装置的构件、等离子体处理装置及聚焦环的制造方法
KR101487520B1 (ko) 2013-02-27 2015-01-29 우범제 웨이퍼 처리설비의 배기가스 감시장치
CN103487362B (zh) * 2013-10-16 2015-09-23 中国工程物理研究院激光聚变研究中心 一种激光粒子测量探头
KR102199642B1 (ko) 2014-01-14 2021-01-08 삼성디스플레이 주식회사 진공 장치 및 그것의 입자 모니터링 방법
KR20150106974A (ko) * 2014-01-29 2015-09-23 세메스 주식회사 기판처리장치 및 방법
CN105021374A (zh) * 2014-04-25 2015-11-04 三星高新电机（天津）有限公司 组装品表面异物的测量装置及其测量方法
CN103954538B (zh) * 2014-05-09 2016-03-09 河北大学 一种干式颗粒粒度测量装置
KR102565327B1 (ko) * 2016-11-07 2023-08-08 어플라이드 머티어리얼스, 인코포레이티드 반도체 챔버 부품들로부터의 나노입자들의 검출 및 분석을 위한 방법들 및 장치
CN114560465B (zh) * 2022-04-07 2023-10-10 新特能源股份有限公司 导气环及反应炉视镜系统

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2002184708A (ja) * 2000-09-14 2002-06-28 Nec Kyushu Ltd 清掃装置および清掃方法と清浄度診断方法および診断装置ならびにこれら装置を用いた半導体製造装置

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US5367139A (en) * 1989-10-23 1994-11-22 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing
US5298720A (en) * 1990-04-25 1994-03-29 International Business Machines Corporation Method and apparatus for contamination control in processing apparatus containing voltage driven electrode
JPH04113615A (ja) * 1990-09-03 1992-04-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0656999U (ja) * 1993-01-12 1994-08-05 日新電機株式会社 パーティクルモニター装置
JP2828066B2 (ja) * 1996-09-27 1998-11-25 松下電器産業株式会社 基板のプラズマクリーニング装置
JPH1187248A (ja) * 1997-09-02 1999-03-30 Sharp Corp プラズマクリーニング装置
JP3301954B2 (ja) * 1998-01-29 2002-07-15 三洋電機株式会社 ドライエッチング装置のパーティクル測定方法
JPH11304688A (ja) * 1998-04-16 1999-11-05 Tokyo Electron Ltd パーティクルモニタ用のガス排気システム
JP4245771B2 (ja) * 2000-03-21 2009-04-02 東京エレクトロン株式会社 耐プラズマ部材、電磁波透過窓用部材およびプラズマ処理装置
JP2003031553A (ja) * 2001-07-16 2003-01-31 Nec Kansai Ltd プラズマエッチング装置
JP2003292337A (ja) * 2002-04-01 2003-10-15 Tosoh Corp プラズマ耐食性石英ガラス、その製造方法及びこれを用いた装置

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2002184708A (ja) * 2000-09-14 2002-06-28 Nec Kyushu Ltd 清掃装置および清掃方法と清浄度診断方法および診断装置ならびにこれら装置を用いた半導体製造装置

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CN100378925C (zh) 2008-04-02
CN1684236A (zh) 2005-10-19
JP2005317900A (ja) 2005-11-10

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