JP4528558B2 - パターンのデータ作成方法、及びパターン検証手法 - Google Patents

パターンのデータ作成方法、及びパターン検証手法 Download PDF

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Publication number
JP4528558B2
JP4528558B2 JP2004160127A JP2004160127A JP4528558B2 JP 4528558 B2 JP4528558 B2 JP 4528558B2 JP 2004160127 A JP2004160127 A JP 2004160127A JP 2004160127 A JP2004160127 A JP 2004160127A JP 4528558 B2 JP4528558 B2 JP 4528558B2
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Japan
Prior art keywords
pattern
substrate
correction
variation range
target
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JP2004160127A
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Japanese (ja)
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JP2005338650A (ja
Inventor
茂樹 野嶋
聡 田中
敏也 小谷
恭子 出羽
壮一 井上
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Toshiba Corp
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Toshiba Corp
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Priority to JP2004160127A priority Critical patent/JP4528558B2/ja
Priority to TW094117277A priority patent/TW200617610A/zh
Priority to KR1020050044940A priority patent/KR100632328B1/ko
Priority to US11/138,407 priority patent/US7788626B2/en
Priority to CN2005100734720A priority patent/CN1702549B/zh
Publication of JP2005338650A publication Critical patent/JP2005338650A/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2004160127A 2004-05-28 2004-05-28 パターンのデータ作成方法、及びパターン検証手法 Expired - Fee Related JP4528558B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004160127A JP4528558B2 (ja) 2004-05-28 2004-05-28 パターンのデータ作成方法、及びパターン検証手法
TW094117277A TW200617610A (en) 2004-05-28 2005-05-26 Pattern data producing method, pattern verification method, photo mask producing method, and semiconductor device manufacturing method
KR1020050044940A KR100632328B1 (ko) 2004-05-28 2005-05-27 패턴 데이터의 작성 방법, 패턴 검증 방법, 포토 마스크의작성 방법, 및 반도체 장치의 제조 방법
US11/138,407 US7788626B2 (en) 2004-05-28 2005-05-27 Pattern data correction method, pattern checking method, pattern check program, photo mask producing method, and semiconductor device manufacturing method
CN2005100734720A CN1702549B (zh) 2004-05-28 2005-05-30 图形数据的制作方法、图形验证方法及其应用

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004160127A JP4528558B2 (ja) 2004-05-28 2004-05-28 パターンのデータ作成方法、及びパターン検証手法

Publications (2)

Publication Number Publication Date
JP2005338650A JP2005338650A (ja) 2005-12-08
JP4528558B2 true JP4528558B2 (ja) 2010-08-18

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JP2004160127A Expired - Fee Related JP4528558B2 (ja) 2004-05-28 2004-05-28 パターンのデータ作成方法、及びパターン検証手法

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Country Link
US (1) US7788626B2 (https=)
JP (1) JP4528558B2 (https=)
KR (1) KR100632328B1 (https=)
CN (1) CN1702549B (https=)
TW (1) TW200617610A (https=)

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JP4592438B2 (ja) * 2005-02-08 2010-12-01 株式会社東芝 半導体集積回路のレイアウト方法、製造方法及びレイアウトプログラム
JP2007310085A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体装置のパターンデータ検証方法、半導体装置のパターンデータ検証プログラム、半導体装置のパターンデータ補正方法、および半導体装置のパターンデータ補正プログラム
KR100818999B1 (ko) 2006-10-09 2008-04-02 삼성전자주식회사 마스크 제작 방법
CN101315885B (zh) * 2007-05-28 2011-03-23 中芯国际集成电路制造(上海)有限公司 半导体器件栅极残留最大允许值确定方法
KR100997302B1 (ko) 2007-10-31 2010-11-29 주식회사 하이닉스반도체 광학 근접 보정 방법
KR101350980B1 (ko) * 2007-12-31 2014-01-15 삼성전자주식회사 Ｃｄ 선형성을 보정할 수 있는 가변 성형 빔을 이용한 노광방법 및 이를 이용한 패턴 형성 방법
JP4568341B2 (ja) * 2008-03-19 2010-10-27 株式会社東芝 シミュレーションモデル作成方法、マスクデータ作成方法、及び半導体装置の製造方法
JP2010044101A (ja) * 2008-08-08 2010-02-25 Toshiba Corp パターン予測方法、プログラム及び装置
JP2010211117A (ja) * 2009-03-12 2010-09-24 Toshiba Corp パターン補正装置およびパターン補正方法
CN101995763B (zh) * 2009-08-17 2012-04-18 上海宏力半导体制造有限公司 光学邻近校正方法
KR101850163B1 (ko) * 2010-02-26 2018-04-18 마이크로닉 아베 패턴 정렬을 수행하기 위한 방법 및 장치
JP5450262B2 (ja) 2010-05-28 2014-03-26 株式会社東芝 補助パターン配置方法、プログラムおよびデバイス製造方法
US9081293B2 (en) * 2013-03-12 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography exposure with correction of overlay shift induced by mask heating
US10345715B2 (en) 2014-09-02 2019-07-09 Nikon Corporation Pattern-edge placement predictor and monitor for lithographic exposure tool
US10018922B2 (en) 2014-09-02 2018-07-10 Nikon Corporation Tuning of optical projection system to optimize image-edge placement
US10079185B1 (en) * 2017-06-23 2018-09-18 United Microelectronics Corp. Semiconductor pattern for monitoring overlay and critical dimension at post-etching stage and metrology method of the same
CN109857881B (zh) * 2019-01-31 2021-01-22 上海华虹宏力半导体制造有限公司 用于opc验证的验证图形的量化分析方法
US11846932B2 (en) 2019-07-05 2023-12-19 Industrial Technology Research Institute Part processing planning method, part processing planning system using the same, part assembly planning method, part assembly planning system using the same, and computer program product thereof
US11768484B2 (en) * 2021-03-31 2023-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer cooling

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JP3331822B2 (ja) * 1995-07-17 2002-10-07 ソニー株式会社 マスクパターン補正方法とそれを用いたマスク、露光方法および半導体装置
JP3934719B2 (ja) * 1995-12-22 2007-06-20 株式会社東芝 光近接効果補正方法
JP3595166B2 (ja) 1998-07-23 2004-12-02 株式会社東芝 マスクパターン設計方法
JP4160203B2 (ja) * 1998-07-23 2008-10-01 株式会社東芝 マスクパターン補正方法及びマスクパターン補正プログラムを記録した記録媒体
JP4226729B2 (ja) * 1999-06-30 2009-02-18 株式会社東芝 マスクパターンの補正方法
JP2001235850A (ja) * 2000-02-24 2001-08-31 Sony Corp フォトマスクパターンの設計方法、レジストパターンの形成方法および半導体装置の製造方法
JP2001272771A (ja) * 2000-03-27 2001-10-05 Toshiba Corp フォトマスクの寸法測定方法
US6519759B2 (en) * 2000-04-19 2003-02-11 Nec Corporation Photomask pattern shape correction method and corrected photomask
JP4064617B2 (ja) * 2000-10-26 2008-03-19 株式会社東芝 マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法
US6553559B2 (en) 2001-01-05 2003-04-22 International Business Machines Corporation Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions
JP2002311561A (ja) * 2001-04-11 2002-10-23 Sony Corp パターン形成方法、パターン処理装置および露光マスク
JP4460794B2 (ja) * 2001-04-23 2010-05-12 株式会社東芝 露光マスクのパターン補正方法、パターン形成方法およびプログラム
JP3827544B2 (ja) * 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4043774B2 (ja) * 2001-12-11 2008-02-06 大日本印刷株式会社 位相シフトマスク用データ補正方法
US6749972B2 (en) * 2002-01-15 2004-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Optical proximity correction common process window maximization over varying feature pitch
JP4139605B2 (ja) * 2002-03-01 2008-08-27 大日本印刷株式会社 片掘り型の基板掘り込み型位相シフトマスクにおけるマスク断面構造の決定方法
DE10240085B4 (de) * 2002-08-30 2005-08-04 Infineon Technologies Ag Verfahren zum Strukturieren einer Maskenschicht
JP4297693B2 (ja) * 2003-01-31 2009-07-15 株式会社ルネサステクノロジ フォトマスク、フォトマスクの製造方法、およびフォトマスクの製造装置
US6978438B1 (en) * 2003-10-01 2005-12-20 Advanced Micro Devices, Inc. Optical proximity correction (OPC) technique using generalized figure of merit for photolithograhic processing
JP2005181523A (ja) * 2003-12-17 2005-07-07 Toshiba Corp 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム
US7251806B2 (en) * 2004-04-09 2007-07-31 Synopsys, Inc. Model-based two-dimensional interpretation filtering

Also Published As

Publication number Publication date
US7788626B2 (en) 2010-08-31
TW200617610A (en) 2006-06-01
CN1702549B (zh) 2011-10-12
JP2005338650A (ja) 2005-12-08
CN1702549A (zh) 2005-11-30
TWI307455B (https=) 2009-03-11
KR20060048140A (ko) 2006-05-18
US20050273754A1 (en) 2005-12-08
KR100632328B1 (ko) 2006-10-11

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