CN1702549B - 图形数据的制作方法、图形验证方法及其应用 - Google Patents

图形数据的制作方法、图形验证方法及其应用 Download PDF

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Publication number
CN1702549B
CN1702549B CN2005100734720A CN200510073472A CN1702549B CN 1702549 B CN1702549 B CN 1702549B CN 2005100734720 A CN2005100734720 A CN 2005100734720A CN 200510073472 A CN200510073472 A CN 200510073472A CN 1702549 B CN1702549 B CN 1702549B
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China
Prior art keywords
pattern
exposure
exposure amount
graphic
graphic data
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Expired - Fee Related
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CN2005100734720A
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Chinese (zh)
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CN1702549A (zh
Inventor
野岛茂树
田中聪
小谷敏也
出羽恭子
井上壮一
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Kioxia Corp
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Toshiba Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CN2005100734720A 2004-05-28 2005-05-30 图形数据的制作方法、图形验证方法及其应用 Expired - Fee Related CN1702549B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP160127/2004 2004-05-28
JP2004160127A JP4528558B2 (ja) 2004-05-28 2004-05-28 パターンのデータ作成方法、及びパターン検証手法

Publications (2)

Publication Number Publication Date
CN1702549A CN1702549A (zh) 2005-11-30
CN1702549B true CN1702549B (zh) 2011-10-12

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CN2005100734720A Expired - Fee Related CN1702549B (zh) 2004-05-28 2005-05-30 图形数据的制作方法、图形验证方法及其应用

Country Status (5)

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US (1) US7788626B2 (https=)
JP (1) JP4528558B2 (https=)
KR (1) KR100632328B1 (https=)
CN (1) CN1702549B (https=)
TW (1) TW200617610A (https=)

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JP2007310085A (ja) * 2006-05-17 2007-11-29 Toshiba Corp 半導体装置のパターンデータ検証方法、半導体装置のパターンデータ検証プログラム、半導体装置のパターンデータ補正方法、および半導体装置のパターンデータ補正プログラム
KR100818999B1 (ko) 2006-10-09 2008-04-02 삼성전자주식회사 마스크 제작 방법
CN101315885B (zh) * 2007-05-28 2011-03-23 中芯国际集成电路制造(上海)有限公司 半导体器件栅极残留最大允许值确定方法
KR100997302B1 (ko) 2007-10-31 2010-11-29 주식회사 하이닉스반도체 광학 근접 보정 방법
KR101350980B1 (ko) * 2007-12-31 2014-01-15 삼성전자주식회사 Ｃｄ 선형성을 보정할 수 있는 가변 성형 빔을 이용한 노광방법 및 이를 이용한 패턴 형성 방법
JP4568341B2 (ja) * 2008-03-19 2010-10-27 株式会社東芝 シミュレーションモデル作成方法、マスクデータ作成方法、及び半導体装置の製造方法
JP2010044101A (ja) * 2008-08-08 2010-02-25 Toshiba Corp パターン予測方法、プログラム及び装置
JP2010211117A (ja) * 2009-03-12 2010-09-24 Toshiba Corp パターン補正装置およびパターン補正方法
CN101995763B (zh) * 2009-08-17 2012-04-18 上海宏力半导体制造有限公司 光学邻近校正方法
KR101850163B1 (ko) * 2010-02-26 2018-04-18 마이크로닉 아베 패턴 정렬을 수행하기 위한 방법 및 장치
JP5450262B2 (ja) 2010-05-28 2014-03-26 株式会社東芝 補助パターン配置方法、プログラムおよびデバイス製造方法
US9081293B2 (en) * 2013-03-12 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography exposure with correction of overlay shift induced by mask heating
US10345715B2 (en) 2014-09-02 2019-07-09 Nikon Corporation Pattern-edge placement predictor and monitor for lithographic exposure tool
US10018922B2 (en) 2014-09-02 2018-07-10 Nikon Corporation Tuning of optical projection system to optimize image-edge placement
US10079185B1 (en) * 2017-06-23 2018-09-18 United Microelectronics Corp. Semiconductor pattern for monitoring overlay and critical dimension at post-etching stage and metrology method of the same
CN109857881B (zh) * 2019-01-31 2021-01-22 上海华虹宏力半导体制造有限公司 用于opc验证的验证图形的量化分析方法
US11846932B2 (en) 2019-07-05 2023-12-19 Industrial Technology Research Institute Part processing planning method, part processing planning system using the same, part assembly planning method, part assembly planning system using the same, and computer program product thereof
US11768484B2 (en) * 2021-03-31 2023-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer cooling

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US6014456A (en) * 1995-07-17 2000-01-11 Sony Corporation Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same
JP2003255511A (ja) * 2002-03-01 2003-09-10 Dainippon Printing Co Ltd 片掘り型の基板掘り込み型位相シフトマスクにおけるマスク断面構造の決定方法

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JP3934719B2 (ja) * 1995-12-22 2007-06-20 株式会社東芝 光近接効果補正方法
JP3595166B2 (ja) 1998-07-23 2004-12-02 株式会社東芝 マスクパターン設計方法
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JP4226729B2 (ja) * 1999-06-30 2009-02-18 株式会社東芝 マスクパターンの補正方法
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US6519759B2 (en) * 2000-04-19 2003-02-11 Nec Corporation Photomask pattern shape correction method and corrected photomask
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US6553559B2 (en) 2001-01-05 2003-04-22 International Business Machines Corporation Method to determine optical proximity correction and assist feature rules which account for variations in mask dimensions
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JP3827544B2 (ja) * 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP4043774B2 (ja) * 2001-12-11 2008-02-06 大日本印刷株式会社 位相シフトマスク用データ補正方法
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JP2005181523A (ja) * 2003-12-17 2005-07-07 Toshiba Corp 設計パターン補正方法、マスクパターン作成方法、半導体装置の製造方法、設計パターン補正システム、及び設計パターン補正プログラム
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Patent Citations (2)

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US6014456A (en) * 1995-07-17 2000-01-11 Sony Corporation Method of correcting mask pattern and mask, method of exposure, apparatus thereof, and photomask and semiconductor device using the same
JP2003255511A (ja) * 2002-03-01 2003-09-10 Dainippon Printing Co Ltd 片掘り型の基板掘り込み型位相シフトマスクにおけるマスク断面構造の決定方法

Also Published As

Publication number Publication date
US7788626B2 (en) 2010-08-31
TW200617610A (en) 2006-06-01
JP4528558B2 (ja) 2010-08-18
JP2005338650A (ja) 2005-12-08
CN1702549A (zh) 2005-11-30
TWI307455B (https=) 2009-03-11
KR20060048140A (ko) 2006-05-18
US20050273754A1 (en) 2005-12-08
KR100632328B1 (ko) 2006-10-11

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