JP4521295B2 - 有機電界発光表示素子及びその製造方法 - Google Patents

有機電界発光表示素子及びその製造方法 Download PDF

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Publication number
JP4521295B2
JP4521295B2 JP2005042917A JP2005042917A JP4521295B2 JP 4521295 B2 JP4521295 B2 JP 4521295B2 JP 2005042917 A JP2005042917 A JP 2005042917A JP 2005042917 A JP2005042917 A JP 2005042917A JP 4521295 B2 JP4521295 B2 JP 4521295B2
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region
pixel electrode
light emitting
electrode
film
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Japanese (ja)
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JP2005340168A (ja
Inventor
昌秀 徐
泰旭 姜
▲ムン▼熙 朴
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Samsung Display Co Ltd
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Samsung Mobile Display Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2005042917A 2004-05-24 2005-02-18 有機電界発光表示素子及びその製造方法 Active JP4521295B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040037052A KR20050112031A (ko) 2004-05-24 2004-05-24 반도체 소자 및 그 형성 방법

Publications (2)

Publication Number Publication Date
JP2005340168A JP2005340168A (ja) 2005-12-08
JP4521295B2 true JP4521295B2 (ja) 2010-08-11

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Application Number Title Priority Date Filing Date
JP2005042917A Active JP4521295B2 (ja) 2004-05-24 2005-02-18 有機電界発光表示素子及びその製造方法
JP2005068159A Active JP4430568B2 (ja) 2004-05-24 2005-03-10 半導体素子及びその製造方法

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JP2005068159A Active JP4430568B2 (ja) 2004-05-24 2005-03-10 半導体素子及びその製造方法

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JP (2) JP4521295B2 (ko)
KR (1) KR20050112031A (ko)
CN (1) CN100481512C (ko)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1819202B1 (en) * 2006-02-10 2011-04-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20070092455A (ko) * 2006-03-10 2007-09-13 삼성전자주식회사 표시 장치 및 그 제조 방법
JP5098294B2 (ja) * 2006-10-30 2012-12-12 株式会社デンソー 炭化珪素半導体装置の製造方法
KR100824880B1 (ko) 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824881B1 (ko) 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100833738B1 (ko) 2006-11-30 2008-05-29 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824902B1 (ko) 2006-12-13 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP5426138B2 (ja) * 2008-10-17 2014-02-26 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR101777246B1 (ko) * 2010-08-30 2017-09-12 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
US8901554B2 (en) * 2011-06-17 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including channel formation region including oxide semiconductor
JP6286941B2 (ja) 2013-08-27 2018-03-07 セイコーエプソン株式会社 発光装置、発光装置の製造方法、電子機器
CN104701243A (zh) * 2013-12-09 2015-06-10 昆山国显光电有限公司 一种通孔刻蚀方法
CN103700625A (zh) * 2013-12-23 2014-04-02 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板及显示装置
CN104022042B (zh) * 2014-06-10 2017-01-25 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管的制作方法和阵列基板的制作方法
CN104994126B (zh) * 2015-05-15 2018-05-04 浙江地球村环保科技有限公司 一种空气地图分析系统
CN104952934B (zh) * 2015-06-25 2018-05-01 京东方科技集团股份有限公司 薄膜晶体管及制造方法、阵列基板、显示面板
KR102447451B1 (ko) * 2016-01-20 2022-09-27 삼성디스플레이 주식회사 유기 발광 표시 장치
JP6725317B2 (ja) * 2016-05-19 2020-07-15 株式会社ジャパンディスプレイ 表示装置
KR102571024B1 (ko) * 2016-10-12 2023-08-25 삼성디스플레이 주식회사 유기 발광 표시 장치
EP3550595B1 (en) 2016-11-30 2024-04-10 Ricoh Company, Ltd. Coating liquid for forming oxide or oxynitride insulator film and a method for manufacturing using the coating liquid
JP6758208B2 (ja) * 2017-01-26 2020-09-23 三菱電機株式会社 液晶表示装置およびｔｆｔアレイ基板の製造方法
CN107134412B (zh) * 2017-03-23 2019-08-16 北京理工大学 一种源漏电极过孔刻蚀工艺及应用
JP2018176493A (ja) * 2017-04-07 2018-11-15 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
CN109860106B (zh) * 2019-02-28 2020-11-03 合肥京东方光电科技有限公司 一种显示基板的制备方法
CN110136574B (zh) * 2019-05-13 2020-10-09 友达光电（昆山）有限公司 显示面板
CN111725324B (zh) 2020-06-11 2021-11-02 武汉华星光电半导体显示技术有限公司 薄膜晶体管、阵列基板及其制造方法
CN112038357A (zh) * 2020-08-31 2020-12-04 上海天马有机发光显示技术有限公司 一种显示面板、显示装置及制备方法
CN113517223B (zh) * 2021-06-29 2024-03-15 上海华力集成电路制造有限公司 有源区金属零层的制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324662A (ja) * 2001-04-23 2002-11-08 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2003345271A (ja) * 2002-05-28 2003-12-03 Sharp Corp 両面表示装置
JP2004014514A (ja) * 2002-06-07 2004-01-15 Lg Electron Inc Ａｍｅｌディスプレイパネルおよびその製造方法
JP2004031324A (ja) * 2002-06-22 2004-01-29 Samsung Sdi Co Ltd 有機電界発光素子
JP2004086014A (ja) * 2002-08-28 2004-03-18 Toshiba Corp 表示装置及び電子機器
JP2004207217A (ja) * 2002-12-11 2004-07-22 Sony Corp 表示装置及び表示装置の製造方法
WO2004068910A1 (ja) * 2003-01-24 2004-08-12 Semiconductor Energy Laboratory Co. Ltd. 発光装置及びその製造方法、並びに前記発光装置を用いた電気機器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324662A (ja) * 2001-04-23 2002-11-08 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2003345271A (ja) * 2002-05-28 2003-12-03 Sharp Corp 両面表示装置
JP2004014514A (ja) * 2002-06-07 2004-01-15 Lg Electron Inc Ａｍｅｌディスプレイパネルおよびその製造方法
JP2004031324A (ja) * 2002-06-22 2004-01-29 Samsung Sdi Co Ltd 有機電界発光素子
JP2004086014A (ja) * 2002-08-28 2004-03-18 Toshiba Corp 表示装置及び電子機器
JP2004207217A (ja) * 2002-12-11 2004-07-22 Sony Corp 表示装置及び表示装置の製造方法
WO2004068910A1 (ja) * 2003-01-24 2004-08-12 Semiconductor Energy Laboratory Co. Ltd. 発光装置及びその製造方法、並びに前記発光装置を用いた電気機器

Also Published As

Publication number Publication date
JP2005340168A (ja) 2005-12-08
CN1725511A (zh) 2006-01-25
JP2005340776A (ja) 2005-12-08
JP4430568B2 (ja) 2010-03-10
KR20050112031A (ko) 2005-11-29
CN100481512C (zh) 2009-04-22

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