JP4498690B2 - 新規樹脂およびそれを含有するフォトレジスト組成物 - Google Patents

新規樹脂およびそれを含有するフォトレジスト組成物 Download PDF

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Publication number
JP4498690B2
JP4498690B2 JP2003154310A JP2003154310A JP4498690B2 JP 4498690 B2 JP4498690 B2 JP 4498690B2 JP 2003154310 A JP2003154310 A JP 2003154310A JP 2003154310 A JP2003154310 A JP 2003154310A JP 4498690 B2 JP4498690 B2 JP 4498690B2
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JP
Japan
Prior art keywords
group
groups
hydroxy
photoresist
resin
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Expired - Lifetime
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JP2003154310A
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English (en)
Japanese (ja)
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JP2004163877A5 (enExample
JP2004163877A (ja
Inventor
ジョージ・ジー・バークレー
ヤング・シー・バエ
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
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Publication of JP2004163877A5 publication Critical patent/JP2004163877A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2003154310A 2002-05-30 2003-05-30 新規樹脂およびそれを含有するフォトレジスト組成物 Expired - Lifetime JP4498690B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38433002P 2002-05-30 2002-05-30

Related Child Applications (1)

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JP2009259996A Division JP2010077441A (ja) 2002-05-30 2009-11-13 新規樹脂およびそれを含有するフォトレジスト組成物

Publications (3)

Publication Number Publication Date
JP2004163877A JP2004163877A (ja) 2004-06-10
JP2004163877A5 JP2004163877A5 (enExample) 2006-07-13
JP4498690B2 true JP4498690B2 (ja) 2010-07-07

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JP2003154310A Expired - Lifetime JP4498690B2 (ja) 2002-05-30 2003-05-30 新規樹脂およびそれを含有するフォトレジスト組成物
JP2009259996A Pending JP2010077441A (ja) 2002-05-30 2009-11-13 新規樹脂およびそれを含有するフォトレジスト組成物

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Country Link
US (2) US7244542B2 (enExample)
JP (2) JP4498690B2 (enExample)
KR (1) KR101015093B1 (enExample)

Families Citing this family (33)

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EP1500976A1 (en) * 2003-07-23 2005-01-26 DSM IP Assets B.V. Dissolution inhibitors in photoresist compositions for microlithography
US7820369B2 (en) * 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
JP5047502B2 (ja) * 2005-01-19 2012-10-10 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 樹脂混合物を含むフォトレジスト組成物
JP4758679B2 (ja) * 2005-05-18 2011-08-31 パナソニック株式会社 レジスト材料及びそれを用いたパターン形成方法
JP4697443B2 (ja) * 2005-09-21 2011-06-08 信越化学工業株式会社 ポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4590332B2 (ja) * 2005-09-22 2010-12-01 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US7629106B2 (en) 2005-11-16 2009-12-08 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP5148090B2 (ja) * 2005-11-16 2013-02-20 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5182468B2 (ja) * 2006-03-06 2013-04-17 信越化学工業株式会社 高分子化合物及びポジ型レジスト材料並びにこれを用いたパターン形成方法
JP4920271B2 (ja) * 2006-03-06 2012-04-18 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US7491483B2 (en) * 2006-03-06 2009-02-17 Shin-Etsu Chemical Co., Ltd. Polymers, positive resist compositions and patterning process
TWI485064B (zh) 2006-03-10 2015-05-21 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
JP4749232B2 (ja) * 2006-05-24 2011-08-17 信越化学工業株式会社 レジスト上層反射防止膜材料およびパターン形成方法
JP4900603B2 (ja) * 2006-10-24 2012-03-21 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
CN101541880B (zh) * 2006-11-28 2011-05-04 日产化学工业株式会社 含有含芳香族稠环的树脂的形成光刻用抗蚀剂下层膜的组合物
JP5037919B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ビニルナフタレン化合物の精製方法
JP5037920B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ヒドロキシビニルナフタレン化合物の製造方法
JP4798027B2 (ja) * 2007-01-18 2011-10-19 Ｊｓｒ株式会社 イオンインプランテーション用感放射線性樹脂組成物、及びイオンインプランテーション用パターン形成方法
US20090071371A1 (en) * 2007-09-18 2009-03-19 College Of William And Mary Silicon Oxynitride Coating Compositions
JP5013119B2 (ja) 2007-09-20 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
JP4990844B2 (ja) * 2008-06-17 2012-08-01 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
EP2189847A3 (en) 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
JP5218227B2 (ja) 2008-12-12 2013-06-26 信越化学工業株式会社 パターン形成方法
JP5598351B2 (ja) * 2010-02-16 2014-10-01 信越化学工業株式会社 電子線用又はｅｕｖ用化学増幅ポジ型レジスト組成物及びパターン形成方法
JP5598350B2 (ja) * 2010-02-16 2014-10-01 信越化学工業株式会社 電子線用又はｅｕｖ用化学増幅ネガ型レジスト組成物及びパターン形成方法
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
US9057960B2 (en) * 2013-02-04 2015-06-16 International Business Machines Corporation Resist performance for the negative tone develop organic development process
JP2015028576A (ja) * 2013-07-01 2015-02-12 富士フイルム株式会社 パターン形成方法
KR102311607B1 (ko) 2014-06-13 2021-10-13 인텔 코포레이션 정규 그리드의 선택적인 감산에 의한 수직 채널 트랜지스터 제조 공정
CN106094431B (zh) 2015-04-30 2020-06-26 罗门哈斯电子材料韩国有限公司 光致抗蚀剂组合物和方法
US11480878B2 (en) 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
TWI686381B (zh) 2017-12-31 2020-03-01 美商羅門哈斯電子材料有限公司 光阻劑組合物及方法
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same

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Also Published As

Publication number Publication date
US20080032232A1 (en) 2008-02-07
KR101015093B1 (ko) 2011-02-16
JP2004163877A (ja) 2004-06-10
US20040038150A1 (en) 2004-02-26
KR20040012458A (ko) 2004-02-11
JP2010077441A (ja) 2010-04-08
US7244542B2 (en) 2007-07-17

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