JP4465356B2 - 浸漬リソグラフィシステムの監視・制御方法及び装置 - Google Patents

浸漬リソグラフィシステムの監視・制御方法及び装置 Download PDF

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Publication number
JP4465356B2
JP4465356B2 JP2006521952A JP2006521952A JP4465356B2 JP 4465356 B2 JP4465356 B2 JP 4465356B2 JP 2006521952 A JP2006521952 A JP 2006521952A JP 2006521952 A JP2006521952 A JP 2006521952A JP 4465356 B2 JP4465356 B2 JP 4465356B2
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Prior art keywords
reflectance
immersion medium
wafer
reflectivity
immersion
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Expired - Fee Related
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JP2007500449A (ja
JP2007500449A5 (enExample
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ジェイ． レビンソン ハリー
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006521952A 2003-07-25 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置 Expired - Fee Related JP4465356B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,021 US7006209B2 (en) 2003-07-25 2003-07-25 Method and apparatus for monitoring and controlling imaging in immersion lithography systems
PCT/US2004/023876 WO2005013008A2 (en) 2003-07-25 2004-07-23 Method for monitoring and controlling imaging in immersion lithography systems

Publications (3)

Publication Number Publication Date
JP2007500449A JP2007500449A (ja) 2007-01-11
JP2007500449A5 JP2007500449A5 (enExample) 2009-05-28
JP4465356B2 true JP4465356B2 (ja) 2010-05-19

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JP2006521952A Expired - Fee Related JP4465356B2 (ja) 2003-07-25 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置

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US (1) US7006209B2 (enExample)
EP (1) EP1652008B1 (enExample)
JP (1) JP4465356B2 (enExample)
KR (1) KR101071966B1 (enExample)
CN (1) CN100538523C (enExample)
TW (1) TWI372947B (enExample)
WO (1) WO2005013008A2 (enExample)

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KR20060058684A (ko) 2006-05-30
TW200510965A (en) 2005-03-16
US7006209B2 (en) 2006-02-28
CN1820229A (zh) 2006-08-16
EP1652008A2 (en) 2006-05-03
EP1652008B1 (en) 2011-06-08
WO2005013008A3 (en) 2005-11-10
WO2005013008A2 (en) 2005-02-10
US20050018208A1 (en) 2005-01-27
TWI372947B (en) 2012-09-21
KR101071966B1 (ko) 2011-10-11
CN100538523C (zh) 2009-09-09
JP2007500449A (ja) 2007-01-11

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