WO2005013008A3 - Method for monitoring and controlling imaging in immersion lithography systems - Google Patents

Method for monitoring and controlling imaging in immersion lithography systems Download PDF

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Publication number
WO2005013008A3
WO2005013008A3 PCT/US2004/023876 US2004023876W WO2005013008A3 WO 2005013008 A3 WO2005013008 A3 WO 2005013008A3 US 2004023876 W US2004023876 W US 2004023876W WO 2005013008 A3 WO2005013008 A3 WO 2005013008A3
Authority
WO
WIPO (PCT)
Prior art keywords
monitoring
immersion lithography
lithography systems
controlling imaging
immersion
Prior art date
Application number
PCT/US2004/023876
Other languages
French (fr)
Other versions
WO2005013008A2 (en
Inventor
Harry J Levinson
Original Assignee
Advanced Micro Devices Inc
Harry J Levinson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc, Harry J Levinson filed Critical Advanced Micro Devices Inc
Priority to EP04757263A priority Critical patent/EP1652008B1/en
Priority to JP2006521952A priority patent/JP4465356B2/en
Publication of WO2005013008A2 publication Critical patent/WO2005013008A2/en
Publication of WO2005013008A3 publication Critical patent/WO2005013008A3/en

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A method of monitoring an immersion lithography system (10) in which a wafer (12) can be immersed in a liquid immersion medium (24). The method detects an index of refraction of the immersion medium in a volume of the immersion medium through which an exposure pattern is configured to traverse and determines if the index of refraction is acceptable for exposing the wafer with the exposure pattern. Also disclosed is a monitoring and control system (26) for an immersion lithography system (10).
PCT/US2004/023876 2003-07-25 2004-07-23 Method for monitoring and controlling imaging in immersion lithography systems WO2005013008A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP04757263A EP1652008B1 (en) 2003-07-25 2004-07-23 Method for monitoring an immersion lithography system
JP2006521952A JP4465356B2 (en) 2003-07-25 2004-07-23 Method and apparatus for monitoring and controlling immersion lithography system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,021 US7006209B2 (en) 2003-07-25 2003-07-25 Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US10/628,021 2003-07-25

Publications (2)

Publication Number Publication Date
WO2005013008A2 WO2005013008A2 (en) 2005-02-10
WO2005013008A3 true WO2005013008A3 (en) 2005-11-10

Family

ID=34080711

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/023876 WO2005013008A2 (en) 2003-07-25 2004-07-23 Method for monitoring and controlling imaging in immersion lithography systems

Country Status (7)

Country Link
US (1) US7006209B2 (en)
EP (1) EP1652008B1 (en)
JP (1) JP4465356B2 (en)
KR (1) KR101071966B1 (en)
CN (1) CN100538523C (en)
TW (1) TWI372947B (en)
WO (1) WO2005013008A2 (en)

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US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9104117B2 (en) 2004-07-07 2015-08-11 Bob Streefkerk Lithographic apparatus having a liquid detection system
US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system
US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
WO2004053952A1 (en) 2002-12-10 2004-06-24 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4352874B2 (en) * 2002-12-10 2009-10-28 株式会社ニコン Exposure apparatus and device manufacturing method
KR20050085235A (en) 2002-12-10 2005-08-29 가부시키가이샤 니콘 Exposure system and device producing method
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DE10261775A1 (en) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Device for the optical measurement of an imaging system
TWI591445B (en) 2003-02-26 2017-07-11 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
KR101181688B1 (en) 2003-03-25 2012-09-19 가부시키가이샤 니콘 Exposure system and device production method
ATE426914T1 (en) 2003-04-07 2009-04-15 Nikon Corp EXPOSURE APPARATUS AND METHOD FOR PRODUCING AN APPARATUS
KR20110104084A (en) 2003-04-09 2011-09-21 가부시키가이샤 니콘 Immersion lithography fluid control system
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
CN1771463A (en) 2003-04-10 2006-05-10 株式会社尼康 Run-off path to collect liquid for an immersion lithography apparatus
KR20170064003A (en) 2003-04-10 2017-06-08 가부시키가이샤 니콘 Environmental system including a transport region for an immersion lithography apparatus
JP4582089B2 (en) 2003-04-11 2010-11-17 株式会社ニコン Liquid jet recovery system for immersion lithography
KR101324818B1 (en) * 2003-04-11 2013-11-01 가부시키가이샤 니콘 Cleanup method for optics in immersion lithography
KR101861493B1 (en) 2003-04-11 2018-05-28 가부시키가이샤 니콘 Apparatus and method for maintaining immersion fluid in the gap under the projection lens during wafer exchange in an immersion lithography machine
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TWI518742B (en) * 2003-05-23 2016-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
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EP1628330A4 (en) 2003-05-28 2009-09-16 Nikon Corp Exposure method, exposure device, and device manufacturing method
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US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
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US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9477160B2 (en) 2003-05-13 2016-10-25 Asml Netherland B.V. Lithographic apparatus and device manufacturing method
US8937704B2 (en) 2003-07-31 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a resistivity sensor
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US9568840B2 (en) 2004-04-14 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
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US9250537B2 (en) 2004-07-12 2016-02-02 Nikon Corporation Immersion exposure apparatus and method with detection of liquid on members of the apparatus
US8941810B2 (en) 2005-12-30 2015-01-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8947631B2 (en) 2005-12-30 2015-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436096B2 (en) 2005-12-30 2016-09-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply

Also Published As

Publication number Publication date
KR20060058684A (en) 2006-05-30
EP1652008A2 (en) 2006-05-03
US7006209B2 (en) 2006-02-28
JP2007500449A (en) 2007-01-11
CN1820229A (en) 2006-08-16
TWI372947B (en) 2012-09-21
KR101071966B1 (en) 2011-10-11
WO2005013008A2 (en) 2005-02-10
US20050018208A1 (en) 2005-01-27
JP4465356B2 (en) 2010-05-19
CN100538523C (en) 2009-09-09
TW200510965A (en) 2005-03-16
EP1652008B1 (en) 2011-06-08

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