JP4437611B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4437611B2
JP4437611B2 JP2000349027A JP2000349027A JP4437611B2 JP 4437611 B2 JP4437611 B2 JP 4437611B2 JP 2000349027 A JP2000349027 A JP 2000349027A JP 2000349027 A JP2000349027 A JP 2000349027A JP 4437611 B2 JP4437611 B2 JP 4437611B2
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JP
Japan
Prior art keywords
oxide film
film
etching
conditions
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000349027A
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English (en)
Japanese (ja)
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JP2002151465A5 (enExample
JP2002151465A (ja
Inventor
寿朗 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
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Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000349027A priority Critical patent/JP4437611B2/ja
Priority to US09/826,038 priority patent/US20020056700A1/en
Priority to TW090116345A priority patent/TW507266B/zh
Priority to KR10-2001-0041821A priority patent/KR100437221B1/ko
Publication of JP2002151465A publication Critical patent/JP2002151465A/ja
Publication of JP2002151465A5 publication Critical patent/JP2002151465A5/ja
Application granted granted Critical
Publication of JP4437611B2 publication Critical patent/JP4437611B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2000349027A 2000-11-16 2000-11-16 半導体装置の製造方法 Expired - Fee Related JP4437611B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000349027A JP4437611B2 (ja) 2000-11-16 2000-11-16 半導体装置の製造方法
US09/826,038 US20020056700A1 (en) 2000-11-16 2001-04-05 Method and system for manufacturing semiconductor device
TW090116345A TW507266B (en) 2000-11-16 2001-07-04 Method and system for manufacturing semiconductor device
KR10-2001-0041821A KR100437221B1 (ko) 2000-11-16 2001-07-12 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000349027A JP4437611B2 (ja) 2000-11-16 2000-11-16 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002151465A JP2002151465A (ja) 2002-05-24
JP2002151465A5 JP2002151465A5 (enExample) 2007-12-20
JP4437611B2 true JP4437611B2 (ja) 2010-03-24

Family

ID=18822503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000349027A Expired - Fee Related JP4437611B2 (ja) 2000-11-16 2000-11-16 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US20020056700A1 (enExample)
JP (1) JP4437611B2 (enExample)
KR (1) KR100437221B1 (enExample)
TW (1) TW507266B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100638948B1 (ko) * 2002-08-28 2006-10-25 도쿄 엘렉트론 리미티드 반도체 에칭 공정의 동적 모델링 및 레서피 최적화 방법 및시스템
US6842661B2 (en) * 2002-09-30 2005-01-11 Advanced Micro Devices, Inc. Process control at an interconnect level
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
US8257546B2 (en) 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
JP2004319574A (ja) * 2003-04-11 2004-11-11 Trecenti Technologies Inc 半導体装置の製造方法、半導体製造装置の自動運転方法および自動運転システム、並びにｃｍｐ装置の自動運転方法
WO2005013349A2 (en) * 2003-07-31 2005-02-10 Fsi International, Inc. Controlled growth of highly uniform, oxide layers, especially ultrathin layers
US20050098194A1 (en) * 2003-09-11 2005-05-12 Christenson Kurt K. Semiconductor wafer immersion systems and treatments using modulated acoustic energy
WO2005025767A1 (en) * 2003-09-11 2005-03-24 Fsi International, Inc. Acoustic diffusers for acoustic field uniformity
JP2006245036A (ja) * 2005-02-28 2006-09-14 Seiko Epson Corp 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置
JP4305401B2 (ja) * 2005-02-28 2009-07-29 セイコーエプソン株式会社 半導体装置
US7596421B2 (en) 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4990548B2 (ja) 2006-04-07 2012-08-01 株式会社日立製作所 半導体装置の製造方法
JP5076426B2 (ja) 2006-09-29 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4971050B2 (ja) 2007-06-21 2012-07-11 株式会社日立製作所 半導体装置の寸法測定装置
JP5401797B2 (ja) 2008-02-06 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置製造システム
JP2010087300A (ja) * 2008-09-30 2010-04-15 Toshiba Corp 半導体装置の製造方法
JP5853382B2 (ja) * 2011-03-11 2016-02-09 ソニー株式会社 半導体装置の製造方法、及び電子機器の製造方法
US9005464B2 (en) * 2011-06-27 2015-04-14 International Business Machines Corporation Tool for manufacturing semiconductor structures and method of use
CN104409348B (zh) * 2014-11-10 2017-08-08 成都士兰半导体制造有限公司 沟槽器件的制作方法
US11538921B2 (en) * 2017-05-15 2022-12-27 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060731A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製法
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR19980014172A (ko) * 1996-08-08 1998-05-15 김광호 반도체 제조공정의 오버레이 측정방법
JP2867982B2 (ja) * 1996-11-29 1999-03-10 日本電気株式会社 半導体装置の製造装置
US6148239A (en) * 1997-12-12 2000-11-14 Advanced Micro Devices, Inc. Process control system using feed forward control threads based on material groups
KR100251279B1 (ko) * 1997-12-26 2000-04-15 윤종용 반도체 제조용 증착설비의 막두께 조절방법
KR100382021B1 (ko) * 2000-02-03 2003-04-26 가부시끼가이샤 도시바 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템

Also Published As

Publication number Publication date
KR20020038458A (ko) 2002-05-23
KR100437221B1 (ko) 2004-06-23
JP2002151465A (ja) 2002-05-24
US20020056700A1 (en) 2002-05-16
TW507266B (en) 2002-10-21

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