KR100437221B1 - 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 - Google Patents

반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 Download PDF

Info

Publication number
KR100437221B1
KR100437221B1 KR10-2001-0041821A KR20010041821A KR100437221B1 KR 100437221 B1 KR100437221 B1 KR 100437221B1 KR 20010041821 A KR20010041821 A KR 20010041821A KR 100437221 B1 KR100437221 B1 KR 100437221B1
Authority
KR
South Korea
Prior art keywords
oxide film
film
processing
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0041821A
Other languages
English (en)
Korean (ko)
Other versions
KR20020038458A (ko
Inventor
오모리도시아끼
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20020038458A publication Critical patent/KR20020038458A/ko
Application granted granted Critical
Publication of KR100437221B1 publication Critical patent/KR100437221B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Weting (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
KR10-2001-0041821A 2000-11-16 2001-07-12 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치 Expired - Fee Related KR100437221B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000349027A JP4437611B2 (ja) 2000-11-16 2000-11-16 半導体装置の製造方法
JPJP-P-2000-00349027 2000-11-16

Publications (2)

Publication Number Publication Date
KR20020038458A KR20020038458A (ko) 2002-05-23
KR100437221B1 true KR100437221B1 (ko) 2004-06-23

Family

ID=18822503

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0041821A Expired - Fee Related KR100437221B1 (ko) 2000-11-16 2001-07-12 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치

Country Status (4)

Country Link
US (1) US20020056700A1 (enExample)
JP (1) JP4437611B2 (enExample)
KR (1) KR100437221B1 (enExample)
TW (1) TW507266B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003278750A1 (en) * 2002-08-28 2004-03-19 Tokyo Electron Limited Method and system for dynamic modeling and recipe optimization of semiconductor etch processes
US6842661B2 (en) * 2002-09-30 2005-01-11 Advanced Micro Devices, Inc. Process control at an interconnect level
US7265382B2 (en) * 2002-11-12 2007-09-04 Applied Materials, Inc. Method and apparatus employing integrated metrology for improved dielectric etch efficiency
US8257546B2 (en) * 2003-04-11 2012-09-04 Applied Materials, Inc. Method and system for monitoring an etch process
JP2004319574A (ja) * 2003-04-11 2004-11-11 Trecenti Technologies Inc 半導体装置の製造方法、半導体製造装置の自動運転方法および自動運転システム、並びにｃｍｐ装置の自動運転方法
US7235495B2 (en) * 2003-07-31 2007-06-26 Fsi International, Inc. Controlled growth of highly uniform, oxide layers, especially ultrathin layers
KR20060121871A (ko) * 2003-09-11 2006-11-29 에프에스아이 인터내쇼날 인크. 음의 장 균등을 위한 음향 발산기
WO2005027202A1 (en) * 2003-09-11 2005-03-24 Fsi International, Inc. Semiconductor wafer immersion systems and treatments using modulated acoustic energy
JP2006245036A (ja) * 2005-02-28 2006-09-14 Seiko Epson Corp 素子分離層の形成方法及び電子デバイスの製造方法、ｃｍｐ装置
JP4305401B2 (ja) * 2005-02-28 2009-07-29 セイコーエプソン株式会社 半導体装置
US7596421B2 (en) 2005-06-21 2009-09-29 Kabushik Kaisha Toshiba Process control system, process control method, and method of manufacturing electronic apparatus
US8070972B2 (en) * 2006-03-30 2011-12-06 Tokyo Electron Limited Etching method and etching apparatus
JP4990548B2 (ja) 2006-04-07 2012-08-01 株式会社日立製作所 半導体装置の製造方法
JP5076426B2 (ja) * 2006-09-29 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4971050B2 (ja) 2007-06-21 2012-07-11 株式会社日立製作所 半導体装置の寸法測定装置
JP5401797B2 (ja) 2008-02-06 2014-01-29 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置製造システム
JP2010087300A (ja) * 2008-09-30 2010-04-15 Toshiba Corp 半導体装置の製造方法
JP5853382B2 (ja) * 2011-03-11 2016-02-09 ソニー株式会社 半導体装置の製造方法、及び電子機器の製造方法
US9005464B2 (en) * 2011-06-27 2015-04-14 International Business Machines Corporation Tool for manufacturing semiconductor structures and method of use
CN104409348B (zh) * 2014-11-10 2017-08-08 成都士兰半导体制造有限公司 沟槽器件的制作方法
KR102281413B1 (ko) * 2017-05-15 2021-07-23 미쓰비시덴키 가부시키가이샤 반도체 장치의 제조 방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060731A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製法
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR19980014172A (ko) * 1996-08-08 1998-05-15 김광호 반도체 제조공정의 오버레이 측정방법
JPH10163286A (ja) * 1996-11-29 1998-06-19 Nec Corp 半導体装置の製造装置
KR19990054210A (ko) * 1997-12-26 1999-07-15 윤종용 반도체 제조용 증착설비의 막두께 조절방법
KR100382021B1 (ko) * 2000-02-03 2003-04-26 가부시끼가이샤 도시바 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6148239A (en) * 1997-12-12 2000-11-14 Advanced Micro Devices, Inc. Process control system using feed forward control threads based on material groups

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060731A (ja) * 1983-09-14 1985-04-08 Hitachi Ltd 半導体装置の製法
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
KR19980014172A (ko) * 1996-08-08 1998-05-15 김광호 반도체 제조공정의 오버레이 측정방법
JPH10163286A (ja) * 1996-11-29 1998-06-19 Nec Corp 半導体装置の製造装置
KR19990054210A (ko) * 1997-12-26 1999-07-15 윤종용 반도체 제조용 증착설비의 막두께 조절방법
KR100382021B1 (ko) * 2000-02-03 2003-04-26 가부시끼가이샤 도시바 반도체 장치 제조 방법, 반도체 장치 제조 지원 시스템, 및 반도체 장치 제조 시스템

Also Published As

Publication number Publication date
JP2002151465A (ja) 2002-05-24
KR20020038458A (ko) 2002-05-23
US20020056700A1 (en) 2002-05-16
TW507266B (en) 2002-10-21
JP4437611B2 (ja) 2010-03-24

Similar Documents

Publication Publication Date Title
KR100437221B1 (ko) 반도체 장치의 제조 방법 및 제조 시스템, 및 반도체 장치
US7588946B2 (en) Controlling system for gate formation of semiconductor devices
US7846792B2 (en) Method for manufacturing semiconductor device and semiconductor device manufacturing system
US8222159B2 (en) Manufacturing method of semiconductor device
JPH07235537A (ja) 表面が平坦化された半導体装置およびその製造方法
US9368387B2 (en) Method of forming shallow trench isolation structure
US20080081384A1 (en) Semiconductor device fabrication method and semiconductor device fabrication system
US6958281B2 (en) Method for forming alignment pattern of semiconductor device
US20050142804A1 (en) Method for fabricating shallow trench isolation structure of semiconductor device
US6509200B2 (en) Method of appraising a dielectric film, method of calibrating temperature of a heat treatment device, and method of fabricating a semiconductor memory device
JPWO2014203400A1 (ja) ドライエッチング方法および半導体装置の製造方法
US7018482B1 (en) Method of manufacturing electronic devices, and apparatus for carrying out such a method
JP2005011834A (ja) 半導体装置の製造方法および半導体装置製造システム
US12040189B2 (en) Method of removing hard mask layer
US7365012B2 (en) Etching method, a method of forming a trench isolation structure, a semiconductor substrate and a semiconductor apparatus
US20050148193A1 (en) Photolithographic method for forming a structure in a semiconductor substrate
JP2000049076A (ja) 半導体集積回路装置の製造方法
CN119451203B (zh) 半导体器件的制造方法
KR100342392B1 (ko) 반도체 소자의 게이트 형성 방법
JP2000144453A (ja) エッチングシステム及びエッチング方法
KR100370333B1 (ko) 반도체 장치 제조에 이용되는 컴퓨터 프로그램과 데이터가저장된 컴퓨터 판독 가능 기록 매체
US20050142764A1 (en) Method for manufacturing semiconductor device
KR20020071896A (ko) 반도체 장치의 제조 방법 및 처리 조건 설정 장치
JP2005079240A (ja) 半導体装置の製造方法、半導体装置の製造システム及び半導体製造装置
JP2003179130A (ja) トレンチ型素子分離構造の製造方法及び製造装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20140530

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20150515

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160615

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160615