JP4434721B2 - ナノドットを有するメモリ製造方法 - Google Patents
ナノドットを有するメモリ製造方法 Download PDFInfo
- Publication number
- JP4434721B2 JP4434721B2 JP2003425346A JP2003425346A JP4434721B2 JP 4434721 B2 JP4434721 B2 JP 4434721B2 JP 2003425346 A JP2003425346 A JP 2003425346A JP 2003425346 A JP2003425346 A JP 2003425346A JP 4434721 B2 JP4434721 B2 JP 4434721B2
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- layer
- memory
- charge storage
- nanodots
- manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 230000015654 memory Effects 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000003860 storage Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 238000007743 anodising Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 6
- 239000002105 nanoparticle Substances 0.000 description 5
- 239000002096 quantum dot Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42332—Gate electrodes for transistors with a floating gate with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
- Y10S977/723—On an electrically insulating substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
Description
102 第1絶縁層
103 電荷貯蔵層
109 第2絶縁層
111 ゲート電極
S ソース電極
D ドレイン電極
Claims (8)
- ソースとドレイン電極とが形成された基板上に第1絶縁層、電荷貯蔵層、犠牲層及び、金属層を順に積層する第1段階と、
前記金属層を陽極酸化して複数のホールを形成した後、前記ホールに露出された前記犠牲層を酸化させる第2段階と、
前記酸化された金属層を除去して前記酸化された犠牲層をマスクとして前記犠牲層及び前記電荷貯蔵層をエッチングして前記電荷貯蔵層をナノドットにパターニングする第3段階と、
前記酸化された犠牲層を除去し、パターニングされた前記電荷貯蔵層の上部に第2絶縁層及び、ゲート電極を成膜し、前記第1絶縁層、電荷貯蔵層、第2絶縁層及び、ゲート電極を所定形態にパターニングする第4段階と、を含むことを特徴とするナノドットを有するメモリ製造方法。 - 前記電荷貯蔵層はSi、Si3N4及び、Al2O3のうち何れか1つで形成することを特徴とする請求項1に記載のナノドットを有するメモリ製造方法。
- 前記犠牲層はTaで形成することを特徴とする請求項1に記載のナノドットを有するメモリ製造方法。
- 前記金属層はAlまたはAl合金で形成することを特徴とする請求項1に記載のナノドットを有するメモリ製造方法。
- 前記第1及び第2絶縁層はSiO2で形成することを特徴とする請求項1に記載のナノドットを有するメモリ製造方法。
- 前記第1段階で、前記第1絶縁層、電荷貯蔵層、犠牲層、金属層及び第2絶縁層を化学気相成膜法、スパッタリング法またはエバポレーション法を利用して成膜することを特徴とする請求項1に記載のナノドットを有するメモリ製造方法。
- 前記第3段階で、前記電荷貯蔵層をナノドット状の円筒が複数配列されたドットアレイ構造にパターニングすることを特徴とする請求項1に記載のナノドットを有するメモリ製造方法。
- 前記ナノドット状の円筒が蜂の巣形状に配列されるようにパターニングすることを特徴とする請求項7に記載のナノドットを有するメモリ製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20020082387A KR100763897B1 (ko) | 2002-12-23 | 2002-12-23 | 나노도트를 가지는 메모리 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004207739A JP2004207739A (ja) | 2004-07-22 |
JP4434721B2 true JP4434721B2 (ja) | 2010-03-17 |
Family
ID=32501447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003425346A Expired - Fee Related JP4434721B2 (ja) | 2002-12-23 | 2003-12-22 | ナノドットを有するメモリ製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6913984B2 (ja) |
EP (1) | EP1437775B1 (ja) |
JP (1) | JP4434721B2 (ja) |
KR (1) | KR100763897B1 (ja) |
CN (1) | CN100336201C (ja) |
DE (1) | DE60333819D1 (ja) |
Families Citing this family (33)
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KR100585462B1 (ko) * | 2003-12-26 | 2006-06-07 | 한국전자통신연구원 | 정보 저장 및 독출 장치 |
KR100601943B1 (ko) * | 2004-03-04 | 2006-07-14 | 삼성전자주식회사 | 고르게 분포된 실리콘 나노 도트가 포함된 게이트를구비하는 메모리 소자의 제조 방법 |
US7208793B2 (en) * | 2004-11-23 | 2007-04-24 | Micron Technology, Inc. | Scalable integrated logic and non-volatile memory |
US7170128B2 (en) * | 2004-12-02 | 2007-01-30 | Atmel Corporation | Multi-bit nanocrystal memory |
JP4442454B2 (ja) * | 2005-02-16 | 2010-03-31 | 株式会社日立製作所 | 不揮発性半導体メモリの製造方法 |
CN100483613C (zh) * | 2005-02-24 | 2009-04-29 | 鸿富锦精密工业(深圳)有限公司 | 量子点制作方法 |
US7612403B2 (en) * | 2005-05-17 | 2009-11-03 | Micron Technology, Inc. | Low power non-volatile memory and gate stack |
US20080197440A1 (en) * | 2005-06-02 | 2008-08-21 | Misuzu R & D Ltd. | Nonvolatile Memory |
US7173304B2 (en) * | 2005-06-06 | 2007-02-06 | Micron Technology, Inc. | Method of manufacturing devices comprising conductive nano-dots, and devices comprising same |
CN100356607C (zh) * | 2005-10-19 | 2007-12-19 | 中国科学院上海微系统与信息技术研究所 | 一种纳米硫系化合物相变存储器的制备方法 |
KR100690925B1 (ko) * | 2005-12-01 | 2007-03-09 | 삼성전자주식회사 | 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법 |
KR100718142B1 (ko) * | 2005-12-02 | 2007-05-14 | 삼성전자주식회사 | 금속층-절연층-금속층 구조의 스토리지 노드를 구비하는불휘발성 메모리 소자 및 그 동작 방법 |
US20070212832A1 (en) * | 2006-03-08 | 2007-09-13 | Freescale Semiconductor Inc. | Method for making a multibit transistor |
KR100740613B1 (ko) * | 2006-07-03 | 2007-07-18 | 삼성전자주식회사 | 비휘발성 기억 소자의 형성 방법 |
US7955935B2 (en) | 2006-08-03 | 2011-06-07 | Micron Technology, Inc. | Non-volatile memory cell devices and methods |
US7560769B2 (en) | 2006-08-03 | 2009-07-14 | Micron Technology, Inc. | Non-volatile memory cell device and methods |
KR100933831B1 (ko) * | 2006-09-06 | 2009-12-24 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 플로팅 게이트 형성 방법 |
US20080093744A1 (en) * | 2006-10-23 | 2008-04-24 | Wang Lorraine C | Anodization |
KR100858085B1 (ko) * | 2006-12-18 | 2008-09-10 | 삼성전자주식회사 | 나노닷을 전하 트랩 사이트로 이용하는 전하 트랩형 메모리소자 |
US7790560B2 (en) * | 2007-03-12 | 2010-09-07 | Board Of Regents Of The Nevada System Of Higher Education | Construction of flash memory chips and circuits from ordered nanoparticles |
WO2009029302A2 (en) * | 2007-05-08 | 2009-03-05 | University Of Washington | Shadow edge lithography for nanoscale patterning and manufacturing |
US8193055B1 (en) | 2007-12-18 | 2012-06-05 | Sandisk Technologies Inc. | Method of forming memory with floating gates including self-aligned metal nanodots using a polymer solution |
US7723186B2 (en) * | 2007-12-18 | 2010-05-25 | Sandisk Corporation | Method of forming memory with floating gates including self-aligned metal nanodots using a coupling layer |
US8388854B2 (en) | 2007-12-31 | 2013-03-05 | Intel Corporation | Methods of forming nanodots using spacer patterning techniques and structures formed thereby |
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WO2012095811A1 (en) | 2011-01-13 | 2012-07-19 | Ramot At Tel-Aviv University Ltd. | Charge storage organic memory system |
KR20130070923A (ko) * | 2011-12-20 | 2013-06-28 | 에스케이하이닉스 주식회사 | 반도체 장치 제조 방법 |
US9029936B2 (en) | 2012-07-02 | 2015-05-12 | Sandisk Technologies Inc. | Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof |
US8823075B2 (en) | 2012-11-30 | 2014-09-02 | Sandisk Technologies Inc. | Select gate formation for nanodot flat cell |
US8987802B2 (en) | 2013-02-28 | 2015-03-24 | Sandisk Technologies Inc. | Method for using nanoparticles to make uniform discrete floating gate layer |
US9331181B2 (en) | 2013-03-11 | 2016-05-03 | Sandisk Technologies Inc. | Nanodot enhanced hybrid floating gate for non-volatile memory devices |
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JP3635683B2 (ja) * | 1993-10-28 | 2005-04-06 | ソニー株式会社 | 電界効果トランジスタ |
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JP4708596B2 (ja) * | 2001-05-10 | 2011-06-22 | キヤノン株式会社 | ナノ構造体の製造方法 |
CN1323051A (zh) * | 2001-05-28 | 2001-11-21 | 东南大学 | 硅基片上有序纳米碳管阵列的制备方法 |
-
2002
- 2002-12-23 KR KR20020082387A patent/KR100763897B1/ko not_active IP Right Cessation
-
2003
- 2003-11-21 CN CNB2003101164388A patent/CN100336201C/zh not_active Expired - Lifetime
- 2003-11-25 EP EP03257431A patent/EP1437775B1/en not_active Expired - Fee Related
- 2003-11-25 DE DE60333819T patent/DE60333819D1/de not_active Expired - Lifetime
- 2003-12-22 JP JP2003425346A patent/JP4434721B2/ja not_active Expired - Fee Related
- 2003-12-23 US US10/743,377 patent/US6913984B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1437775A2 (en) | 2004-07-14 |
US20040137704A1 (en) | 2004-07-15 |
KR20040056409A (ko) | 2004-07-01 |
DE60333819D1 (de) | 2010-09-30 |
JP2004207739A (ja) | 2004-07-22 |
US6913984B2 (en) | 2005-07-05 |
CN100336201C (zh) | 2007-09-05 |
KR100763897B1 (ko) | 2007-10-05 |
EP1437775B1 (en) | 2010-08-18 |
EP1437775A3 (en) | 2006-08-30 |
CN1510740A (zh) | 2004-07-07 |
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