JP4433131B2 - シリコン系薄膜の形成方法 - Google Patents

シリコン系薄膜の形成方法 Download PDF

Info

Publication number
JP4433131B2
JP4433131B2 JP2002075267A JP2002075267A JP4433131B2 JP 4433131 B2 JP4433131 B2 JP 4433131B2 JP 2002075267 A JP2002075267 A JP 2002075267A JP 2002075267 A JP2002075267 A JP 2002075267A JP 4433131 B2 JP4433131 B2 JP 4433131B2
Authority
JP
Japan
Prior art keywords
silicon
thin film
substrate
forming
based thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002075267A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002353482A5 (enExample
JP2002353482A (ja
Inventor
隆治 近藤
正太郎 岡部
公一朗 森山
健志 宍戸
考博 矢島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2002075267A priority Critical patent/JP4433131B2/ja
Priority to US10/101,859 priority patent/US7074641B2/en
Publication of JP2002353482A publication Critical patent/JP2002353482A/ja
Publication of JP2002353482A5 publication Critical patent/JP2002353482A5/ja
Application granted granted Critical
Publication of JP4433131B2 publication Critical patent/JP4433131B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photovoltaic Devices (AREA)
JP2002075267A 2001-03-22 2002-03-18 シリコン系薄膜の形成方法 Expired - Fee Related JP4433131B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002075267A JP4433131B2 (ja) 2001-03-22 2002-03-18 シリコン系薄膜の形成方法
US10/101,859 US7074641B2 (en) 2001-03-22 2002-03-21 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-82821 2001-03-22
JP2001082821 2001-03-22
JP2002075267A JP4433131B2 (ja) 2001-03-22 2002-03-18 シリコン系薄膜の形成方法

Publications (3)

Publication Number Publication Date
JP2002353482A JP2002353482A (ja) 2002-12-06
JP2002353482A5 JP2002353482A5 (enExample) 2007-06-14
JP4433131B2 true JP4433131B2 (ja) 2010-03-17

Family

ID=26611807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002075267A Expired - Fee Related JP4433131B2 (ja) 2001-03-22 2002-03-18 シリコン系薄膜の形成方法

Country Status (2)

Country Link
US (1) US7074641B2 (enExample)
JP (1) JP4433131B2 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP4196371B2 (ja) * 2002-08-20 2008-12-17 キヤノンアネルバ株式会社 ハロゲンガスの製造方法、ハロゲンガスの製造装置及びハロゲンガスの回収・循環システム
US7666766B2 (en) 2005-09-27 2010-02-23 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus, method for forming film, and method for manufacturing photoelectric conversion device
US20080057220A1 (en) * 2006-01-31 2008-03-06 Robert Bachrach Silicon photovoltaic cell junction formed from thin film doping source
JP5054326B2 (ja) * 2006-05-01 2012-10-24 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池モジュールの改良された耐久性試験方法
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US20080023070A1 (en) * 2006-07-28 2008-01-31 Sanjai Sinha Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US20080299747A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Method for forming amorphouse silicon film by plasma cvd
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
JP2010533796A (ja) * 2007-07-17 2010-10-28 アプライド マテリアルズ インコーポレイテッド 圧力制御された遠隔プラズマ源による洗浄率の改善
US20090101201A1 (en) * 2007-10-22 2009-04-23 White John M Nip-nip thin-film photovoltaic structure
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US20090107549A1 (en) * 2007-10-24 2009-04-30 Peter Borden Percolating amorphous silicon solar cell
WO2009059238A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
CN102066106B (zh) * 2008-05-27 2014-10-08 首诺公司 薄膜光伏组件
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
US8124868B2 (en) * 2008-12-16 2012-02-28 Solutia Inc. Thin film photovoltaic module with contoured deairing substrate
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
WO2011011301A2 (en) * 2009-07-23 2011-01-27 Applied Materials, Inc. A mixed silicon phase film for high efficiency thin film silicon solar cells
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
CN102811855B (zh) 2010-03-19 2016-09-14 首诺公司 具有轮廓成形脱气基材的薄膜光伏模块
SG183430A1 (en) 2010-03-19 2012-09-27 Solutia Inc Photovoltaic module with stabilized polymer
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN103946867A (zh) 2011-07-13 2014-07-23 西奥尼克斯公司 生物计量成像装置和相关方法
WO2013009505A2 (en) 2011-07-13 2013-01-17 Applied Materials, Inc. Methods of manufacturing thin film transistor devices
JP6204917B2 (ja) 2011-10-07 2017-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アルゴンガス希釈によるシリコン含有層を堆積するための方法
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6829707B2 (ja) * 2018-08-13 2021-02-10 株式会社東芝 センサ
US20240158910A1 (en) * 2022-11-16 2024-05-16 Wuhan Youmeike Automation Co., Ltd Microwave plasma chemical vapor deposition device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3163875B2 (ja) 1993-09-30 2001-05-08 株式会社島津製作所 医用画像処理装置
EP1041646B1 (en) 1997-11-10 2012-12-12 Kaneka Corporation Method of producing silicon thin-film photoelectric transducer
US6103138A (en) * 1998-01-21 2000-08-15 Canon Kabushiki Kaisha Silicon-system thin film, photovoltaic device, method for forming silicon-system thin film, and method for producing photovoltaic device
JPH11233801A (ja) * 1998-02-17 1999-08-27 Canon Inc 微結晶シリコン膜の形成方法、および光起電力素子
JPH11330520A (ja) 1998-03-09 1999-11-30 Kanegafuchi Chem Ind Co Ltd シリコン系薄膜光電変換装置の製造方法とその方法に用いられるプラズマｃｖｄ装置
JP3812232B2 (ja) * 1998-10-23 2006-08-23 日新電機株式会社 多結晶シリコン薄膜形成方法及び薄膜形成装置
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
JP2002305315A (ja) * 2001-01-31 2002-10-18 Canon Inc 半導体素子の形成方法及び半導体素子
US6858308B2 (en) * 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
JP2003007629A (ja) * 2001-04-03 2003-01-10 Canon Inc シリコン系膜の形成方法、シリコン系膜および半導体素子
JP2002371357A (ja) * 2001-06-14 2002-12-26 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置

Also Published As

Publication number Publication date
JP2002353482A (ja) 2002-12-06
US7074641B2 (en) 2006-07-11
US20050227457A1 (en) 2005-10-13

Similar Documents

Publication Publication Date Title
JP4433131B2 (ja) シリコン系薄膜の形成方法
JP4827303B2 (ja) 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法
US6855621B2 (en) Method of forming silicon-based thin film, method of forming silicon-based semiconductor layer, and photovoltaic element
JP2002299670A (ja) シリコン系薄膜及び光起電力素子
US6794275B2 (en) Process for forming a silicon-based film on a substrate using a temperature gradient across the substrate axis
US6858308B2 (en) Semiconductor element, and method of forming silicon-based film
US7501305B2 (en) Method for forming deposited film and photovoltaic element
US6737123B2 (en) Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system
JP2001345272A (ja) シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子
JP2002134772A (ja) シリコン系薄膜及び光起電力素子
JP2002305315A (ja) 半導体素子の形成方法及び半導体素子
JP2001345273A (ja) シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子
JP2002170973A (ja) 半導体素子の形成方法及び半導体素子
JPH11103082A (ja) 光起電力素子及びその作製方法
JP4731708B2 (ja) 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法
JP2001358350A (ja) 光起電力素子
JP4343482B2 (ja) シリコン系膜の形成方法、シリコン系膜及び光起電力素子
JP3862615B2 (ja) シリコン系薄膜形成装置およびシリコン系薄膜形成方法
JP2005317855A (ja) 微結晶シリコン膜の形成方法及び光起電力素子
JP2002134774A (ja) シリコン系薄膜の形成方法及びシリコン系薄膜並びに光起電力素子
JP2001244488A (ja) 光起電力素子
JP3832989B2 (ja) 光起電力素子、ｉ型シリコン系半導体層の形成方法及び光起電力素子の製造方法
JP2011258962A (ja) 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法
JP2002371358A (ja) シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子
JP2002305312A (ja) 光起電力素子

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041110

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20070330

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070423

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080207

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080411

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080901

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080909

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20081010

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091215

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130108

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140108

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees