JP2002353482A5 - - Google Patents

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Publication number
JP2002353482A5
JP2002353482A5 JP2002075267A JP2002075267A JP2002353482A5 JP 2002353482 A5 JP2002353482 A5 JP 2002353482A5 JP 2002075267 A JP2002075267 A JP 2002075267A JP 2002075267 A JP2002075267 A JP 2002075267A JP 2002353482 A5 JP2002353482 A5 JP 2002353482A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002075267A
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Japanese (ja)
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JP2002353482A (ja
JP4433131B2 (ja
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Priority to JP2002075267A priority Critical patent/JP4433131B2/ja
Priority claimed from JP2002075267A external-priority patent/JP4433131B2/ja
Priority to US10/101,859 priority patent/US7074641B2/en
Publication of JP2002353482A publication Critical patent/JP2002353482A/ja
Publication of JP2002353482A5 publication Critical patent/JP2002353482A5/ja
Application granted granted Critical
Publication of JP4433131B2 publication Critical patent/JP4433131B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002075267A 2001-03-22 2002-03-18 シリコン系薄膜の形成方法 Expired - Fee Related JP4433131B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2002075267A JP4433131B2 (ja) 2001-03-22 2002-03-18 シリコン系薄膜の形成方法
US10/101,859 US7074641B2 (en) 2001-03-22 2002-03-21 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-82821 2001-03-22
JP2001082821 2001-03-22
JP2002075267A JP4433131B2 (ja) 2001-03-22 2002-03-18 シリコン系薄膜の形成方法

Publications (3)

Publication Number Publication Date
JP2002353482A JP2002353482A (ja) 2002-12-06
JP2002353482A5 true JP2002353482A5 (enExample) 2007-06-14
JP4433131B2 JP4433131B2 (ja) 2010-03-17

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Family Applications (1)

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JP2002075267A Expired - Fee Related JP4433131B2 (ja) 2001-03-22 2002-03-18 シリコン系薄膜の形成方法

Country Status (2)

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US (1) US7074641B2 (enExample)
JP (1) JP4433131B2 (enExample)

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US20080057220A1 (en) * 2006-01-31 2008-03-06 Robert Bachrach Silicon photovoltaic cell junction formed from thin film doping source
JP5054326B2 (ja) * 2006-05-01 2012-10-24 昭和シェル石油株式会社 Cis系薄膜太陽電池モジュールの改良された耐久性試験方法
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
US20080023070A1 (en) * 2006-07-28 2008-01-31 Sanjai Sinha Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US20080299747A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Method for forming amorphouse silicon film by plasma cvd
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
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US20090101201A1 (en) * 2007-10-22 2009-04-23 White John M Nip-nip thin-film photovoltaic structure
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US20090107549A1 (en) * 2007-10-24 2009-04-30 Peter Borden Percolating amorphous silicon solar cell
WO2009059238A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
CN102066106B (zh) * 2008-05-27 2014-10-08 首诺公司 薄膜光伏组件
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
US8124868B2 (en) * 2008-12-16 2012-02-28 Solutia Inc. Thin film photovoltaic module with contoured deairing substrate
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
WO2011011301A2 (en) * 2009-07-23 2011-01-27 Applied Materials, Inc. A mixed silicon phase film for high efficiency thin film silicon solar cells
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
CN102811855B (zh) 2010-03-19 2016-09-14 首诺公司 具有轮廓成形脱气基材的薄膜光伏模块
SG183430A1 (en) 2010-03-19 2012-09-27 Solutia Inc Photovoltaic module with stabilized polymer
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN103946867A (zh) 2011-07-13 2014-07-23 西奥尼克斯公司 生物计量成像装置和相关方法
WO2013009505A2 (en) 2011-07-13 2013-01-17 Applied Materials, Inc. Methods of manufacturing thin film transistor devices
JP6204917B2 (ja) 2011-10-07 2017-09-27 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated アルゴンガス希釈によるシリコン含有層を堆積するための方法
WO2014209421A1 (en) 2013-06-29 2014-12-31 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6829707B2 (ja) * 2018-08-13 2021-02-10 株式会社東芝 センサ
US20240158910A1 (en) * 2022-11-16 2024-05-16 Wuhan Youmeike Automation Co., Ltd Microwave plasma chemical vapor deposition device

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JP2002371357A (ja) * 2001-06-14 2002-12-26 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置

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