JP5054326B2 - Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 - Google Patents
Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 Download PDFInfo
- Publication number
- JP5054326B2 JP5054326B2 JP2006127193A JP2006127193A JP5054326B2 JP 5054326 B2 JP5054326 B2 JP 5054326B2 JP 2006127193 A JP2006127193 A JP 2006127193A JP 2006127193 A JP2006127193 A JP 2006127193A JP 5054326 B2 JP5054326 B2 JP 5054326B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- cis
- film solar
- cell module
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 82
- 238000010998 test method Methods 0.000 title claims description 26
- 238000012360 testing method Methods 0.000 claims description 69
- 238000003860 storage Methods 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 239000003566 sealing material Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 19
- 230000006866 deterioration Effects 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 230000001678 irradiating effect Effects 0.000 description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 5
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- BVSHTEBQPBBCFT-UHFFFAOYSA-N gallium(iii) sulfide Chemical compound [S-2].[S-2].[S-2].[Ga+3].[Ga+3] BVSHTEBQPBBCFT-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- JLKFUGXSXNYLPC-UHFFFAOYSA-N [S].[S].[Cu] Chemical compound [S].[S].[Cu] JLKFUGXSXNYLPC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- NMHFBDQVKIZULJ-UHFFFAOYSA-N selanylideneindium Chemical compound [In]=[Se] NMHFBDQVKIZULJ-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 description 1
- 229910000338 selenium disulfide Inorganic materials 0.000 description 1
- JNMWHTHYDQTDQZ-UHFFFAOYSA-N selenium sulfide Chemical compound S=[Se]=S JNMWHTHYDQTDQZ-UHFFFAOYSA-N 0.000 description 1
- 229960005265 selenium sulfide Drugs 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)
Description
本出願人らは、CIS系薄膜太陽電池モジュールに、高温高湿保管試験の間に光を照射し続けたら、如何なる劣化も示さないであろうと予想し、検討を行ってきたが、その確認のために、擬似太陽光照射装置(ソーラー・シミュレータ)のXeランプ等の強度を調整することによって、曇りの日の日射量に相当する放射照度100〜300W/m2 の弱い光を試験期間中継続して照射する改良高温高湿保管試験を行った。
改良された改良高温高湿保管方法において、カバーガラス/EVA樹脂/CIS系薄膜太陽電池サブモジュール/ガラス基板等からなるサンドイッチ構造を有する試験対象のCIS系薄膜太陽電池モジュール2’(図3参照。)に100〜300W/m2 の弱い光を試験期間中継続して照射した場合、試験時間である1,000時間終了後でさえ、図2に示すように、開放端状態で保管された当該太陽電池モジュール2’の太陽電池特性(変換効率Eff〔%〕、曲線因子FF、短絡電流Isc〔A〕、開放電圧Voc〔V〕)の劣化は大幅に減少した。
1A 耐久性試験装置)
1a ガラス窓(光透過窓)
1B I−V測定部
1C 温度・湿度制御部
1D 擬似太陽光照射装置
1E 光源(Xeランプ)
1F 電力供給・制御部
2 CIS系薄膜太陽電池モジュール
2’ 試験対象CIS系薄膜太陽電池モジュール
3 CIS系薄膜太陽電池サブモジュール
3’ CIS系薄膜太陽電池デバイス
3A ガラス基板
3B アルカリバリア層
3C 金属裏面電極層
3D p形光吸収層
3E 高抵抗バッファ層
3F n形窓層(透明導電膜)
4 EVA樹脂フィルム
5 カバーガラス
6 バックシート
7 ケーブル付接続箱
8 シール材
9 フレーム
Claims (3)
- CIS系薄膜太陽電池モジュールが弱い光の照射により変換効率等が回復するという特性を適正に評価することができる耐久性試験方法であって、前記耐久性試験の対象であるCIS系薄膜太陽電池モジュールを温度85℃、相対湿度85%の比較的高温、高湿の条件下で、暗闇中に1,000時間格納する試験であるDampHeat試験を行う際に、前記温度、湿度及び格納時間はそのままで、擬似太陽光照射装置(ソーラー・シュミレータ)からの光が、曇りの日の日射量に相当する弱い光になるように光源の強度を調整して試験期間中継続して照射して各種太陽電池特性を計測することを特徴とするCIS系薄膜太陽電池モジュールの改良された耐久性試験方法。
- 前記弱い光の放射照度が、100〜300W/m2 であることを特徴とする請求項1に記載のCIS系薄膜太陽電池モジュールの改良された耐久性試験方法。
- 前記CIS系薄膜太陽電池モジュールは、パターンニングにより複数個のCIS系薄膜太陽電池デバイスを電気的に接続したCIS系薄膜太陽電池サブモジュールを接着剤である加熱、架橋したEVA樹脂フィルムを介してカバーカラスを貼着し、裏面側は、ガラス基板に、加熱、架橋したEVA樹脂フィルムを介してバックシートを貼着し、その下にケーブル付き接続箱を設け、この構造体の外周囲にシール材を介してフレームを取り付けたものであり、前記CIS系薄膜太陽電池デバイスは、ガラス基板上に、アルカリバリア層、金属裏面電極層、p形CIS系光吸収層、高抵抗バッファ層、n形窓層(透明導電膜)の順で高品質薄膜層が順次積層されたサブストレート構造のpnヘテロ接合デバイスであり、前記光吸収層は、多元化合物半導体薄膜からなることを特徴とする請求項1又は2に記載のCIS系薄膜太陽電池モジュールの改良された耐久性試験方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006127193A JP5054326B2 (ja) | 2006-05-01 | 2006-05-01 | Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 |
CNA2007800157716A CN101432891A (zh) | 2006-05-01 | 2007-03-29 | Cis系薄膜太阳电池模块的改进的耐久性试验方法 |
EP07740431.7A EP2023400A4 (en) | 2006-05-01 | 2007-03-29 | METHOD FOR TESTING IMPROVED DURABILITY OF THIN-FILM PHOTOVOLTAIC CELL MODULE BASED ON CIS |
US12/298,721 US8242795B2 (en) | 2006-05-01 | 2007-03-29 | Method of testing durability of CIS based thin-film solar cell module |
PCT/JP2007/056993 WO2007129512A1 (ja) | 2006-05-01 | 2007-03-29 | Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 |
KR20087026870A KR101304855B1 (ko) | 2006-05-01 | 2007-03-29 | Cis계 박막 태양전지 모듈의 개량된 내구성 시험 방법 |
TW96115257A TW200802907A (en) | 2006-05-01 | 2007-04-30 | Improved durability test method of CIS based thin film solar cell module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006127193A JP5054326B2 (ja) | 2006-05-01 | 2006-05-01 | Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007299969A JP2007299969A (ja) | 2007-11-15 |
JP5054326B2 true JP5054326B2 (ja) | 2012-10-24 |
Family
ID=38667622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006127193A Expired - Fee Related JP5054326B2 (ja) | 2006-05-01 | 2006-05-01 | Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8242795B2 (ja) |
EP (1) | EP2023400A4 (ja) |
JP (1) | JP5054326B2 (ja) |
KR (1) | KR101304855B1 (ja) |
CN (1) | CN101432891A (ja) |
TW (1) | TW200802907A (ja) |
WO (1) | WO2007129512A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010039500A2 (en) * | 2008-09-23 | 2010-04-08 | Applied Materials, Inc. | Light soaking system and test method for solar cells |
KR20110108388A (ko) * | 2009-01-21 | 2011-10-05 | 퍼듀 리서치 파운데이션 | 이황화 구리 인듐 나노 입자를 함유하는 전구체 층의 셀렌화 |
DE102009057203A1 (de) * | 2009-11-26 | 2011-06-01 | Aci-Ecotec Gmbh & Co. Kg | Einrichtung zum Aussetzen eines Fotovoltaik-Dünnschichtmoduls mittels Licht |
US20130063174A1 (en) * | 2010-06-04 | 2013-03-14 | Fuji Electric Co., Ltd. | Solar simulator and solar cell inspection device |
CN103155175A (zh) * | 2010-10-12 | 2013-06-12 | 法国圣戈班玻璃厂 | 具有复合片材结构的薄层太阳能模块 |
US9312417B2 (en) * | 2010-10-22 | 2016-04-12 | Guardian Industries Corp. | Photovoltaic modules, and/or methods of making the same |
KR101194685B1 (ko) | 2011-02-01 | 2012-10-29 | 한국에너지기술연구원 | 고집광 태양전지모듈 내열특성 분석장치 |
JP5502776B2 (ja) * | 2011-02-14 | 2014-05-28 | エスペック株式会社 | 太陽電池パネルの試験装置、試験方法、制御装置、及びプログラム |
US8860424B1 (en) * | 2011-03-10 | 2014-10-14 | Solar Junction Corporation | Apparatus and method for highly accelerated life testing of solar cells |
KR101581524B1 (ko) * | 2011-06-28 | 2015-12-30 | 쌩-고벵 글래스 프랑스 | 박막 태양광 모듈의 공칭 출력의 신속 안정화 방법 |
US9234857B2 (en) | 2011-11-14 | 2016-01-12 | First Solar, Inc. | Method and apparatus providing temperature uniformity |
KR101270767B1 (ko) * | 2011-11-30 | 2013-06-03 | 전자부품연구원 | 태양전지의 수분침투에 대한 신뢰성 평가 방법 |
CN102818979B (zh) * | 2012-08-03 | 2014-12-10 | 北京大学 | 一种曲面太阳能电池光电性能测量方法 |
JP5692193B2 (ja) * | 2012-09-27 | 2015-04-01 | ダイキン工業株式会社 | 擬似太陽光照射装置 |
KR101338801B1 (ko) * | 2012-12-07 | 2013-12-06 | 주식회사 티엔이테크 | 태양전지 특성 평가용 광 조사 시스템 |
CN103030119B (zh) * | 2013-01-10 | 2015-01-07 | 华北电力大学 | 用作太阳能电池吸收层的稀土半导体化合物及其制备方法 |
KR101438668B1 (ko) * | 2013-04-08 | 2014-11-04 | 한국에너지기술연구원 | 태양전지모듈 가속시험 방법 |
CN104237790A (zh) * | 2013-06-09 | 2014-12-24 | 国家纳米科学中心 | 一种太阳能电池寿命的测量装置及测量方法 |
CN105099365B (zh) * | 2014-05-15 | 2017-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 太阳能电池的测试设备 |
BR112018005784B1 (pt) * | 2015-09-24 | 2022-10-11 | Hunt Perovskite Technologies, L.L.C. | Sistema e método para testar degradação de dispositivo fotossensível |
CN106712717B (zh) * | 2017-03-15 | 2018-05-08 | 常州亿晶光电科技有限公司 | 一种太阳能电池性能测试系统及其测试方法 |
CN112271144B (zh) * | 2020-10-13 | 2024-01-30 | 中国科学院上海微系统与信息技术研究所 | 一种太阳能电池耐湿热可靠性的测试方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04357885A (ja) * | 1991-06-04 | 1992-12-10 | Canon Inc | 太陽電池 |
JP2761135B2 (ja) | 1991-09-24 | 1998-06-04 | キヤノン株式会社 | 太陽電池電源装置 |
JPH06232438A (ja) | 1993-02-03 | 1994-08-19 | Asahi Glass Co Ltd | 太陽電池モジュール |
JP3579078B2 (ja) * | 1994-03-11 | 2004-10-20 | 石原産業株式会社 | 光電変換材料用半導体 |
JPH10112549A (ja) * | 1996-10-08 | 1998-04-28 | Canon Inc | 太陽電池モジュール |
JPH11135811A (ja) * | 1997-10-28 | 1999-05-21 | Yazaki Corp | Cis系太陽電池モジュール及びその製造方法 |
JPH11219734A (ja) * | 1998-01-30 | 1999-08-10 | Sekisui Chem Co Ltd | 光電変換材料用半導体及びこの半導体を用いた積層体並びにこれらの製造方法及び光電池 |
JP3952103B2 (ja) * | 1998-05-29 | 2007-08-01 | 触媒化成工業株式会社 | 光電気セルおよび光電気セル用金属酸化物半導体膜の製造方法 |
JP2000031513A (ja) | 1998-07-08 | 2000-01-28 | Matsushita Battery Industrial Co Ltd | CdS/CdTe太陽電池およびその製造方法 |
JP2000036331A (ja) * | 1998-07-16 | 2000-02-02 | Konica Corp | 金属酸化物、半導体、光電変換材料用電極及び太陽電池 |
JP3121811B1 (ja) * | 1999-09-01 | 2001-01-09 | 鐘淵化学工業株式会社 | 薄膜太陽電池モジュール及びその製造方法 |
KR100385143B1 (ko) * | 2001-01-18 | 2003-05-23 | 주식회사 애니셀 | 박막 태양 전지를 구비한 박막 전지 및 그 제조 방법 |
JP4433131B2 (ja) * | 2001-03-22 | 2010-03-17 | キヤノン株式会社 | シリコン系薄膜の形成方法 |
KR20010069505A (ko) * | 2001-04-06 | 2001-07-25 | 김재송 | 3차원태양전지 |
JP4207456B2 (ja) * | 2002-02-27 | 2009-01-14 | 株式会社ブリヂストン | 太陽電池モジュール及びそのための仮止め用テープ |
ES2291523T3 (es) * | 2002-12-12 | 2008-03-01 | Mitsubishi Heavy Industries, Ltd. | Metodo de produccion para un panel solar. |
KR20050040376A (ko) * | 2003-10-28 | 2005-05-03 | 모인에너지(주) | 한정된 공간을 이용한 태양전지모듈 설치구조 |
CA2602029C (en) * | 2005-03-11 | 2014-07-15 | Wake Forest University Health Sciences | Tissue engineered blood vessels |
-
2006
- 2006-05-01 JP JP2006127193A patent/JP5054326B2/ja not_active Expired - Fee Related
-
2007
- 2007-03-29 WO PCT/JP2007/056993 patent/WO2007129512A1/ja active Application Filing
- 2007-03-29 US US12/298,721 patent/US8242795B2/en active Active
- 2007-03-29 CN CNA2007800157716A patent/CN101432891A/zh active Pending
- 2007-03-29 KR KR20087026870A patent/KR101304855B1/ko active IP Right Grant
- 2007-03-29 EP EP07740431.7A patent/EP2023400A4/en not_active Withdrawn
- 2007-04-30 TW TW96115257A patent/TW200802907A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20090016450A (ko) | 2009-02-13 |
WO2007129512A1 (ja) | 2007-11-15 |
US8242795B2 (en) | 2012-08-14 |
KR101304855B1 (ko) | 2013-09-05 |
US20090072837A1 (en) | 2009-03-19 |
JP2007299969A (ja) | 2007-11-15 |
EP2023400A1 (en) | 2009-02-11 |
CN101432891A (zh) | 2009-05-13 |
TW200802907A (en) | 2008-01-01 |
EP2023400A4 (en) | 2015-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5054326B2 (ja) | Cis系薄膜太陽電池モジュールの改良された耐久性試験方法 | |
Holzhey et al. | A full overview of international standards assessing the long-term stability of perovskite solar cells | |
Van Dyk et al. | Long-term monitoring of photovoltaic devices | |
Muñoz-García et al. | Characterization of thin film PV modules under standard test conditions: Results of indoor and outdoor measurements and the effects of sunlight exposure | |
Bansal et al. | Comparative investigation of performance evaluation, degradation causes, impact and corrective measures for ground mount and rooftop solar PV plants–A review | |
US8124870B2 (en) | Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device | |
Silvestre et al. | Degradation analysis of thin film photovoltaic modules under outdoor long term exposure in Spanish continental climate conditions | |
Kumar et al. | Solar PV module technologies | |
Rajput et al. | Effect of irradiance, temperature exposure and an Arrhenius approach to estimating weathering acceleration factor of Glass, EVA and Tedlar in a composite climate of India | |
del Cueto et al. | Stability of CIS/CIGS modules at the outdoor test facility over two decades | |
Sato et al. | Investigation of the power generation of organic photovoltaic modules connected to the power grid for more than three years | |
Rawat et al. | Long-term Performance Analysis of CdTe PV module in real operating conditions | |
Radue et al. | Analysis of performance and device parameters of CIGS PV modules deployed outdoors | |
Virtuani | Solar Module Technology | |
US9112065B2 (en) | Method of curing solar cells to reduce lamination induced efficiency loss | |
Rabanal-Arabach | Development of a c-Si Photovoltaic Module for Desert Climates | |
Sundaramoorthy et al. | Preliminary damp-heat stability studies of encapsulated CIGS solar cells | |
US20160225928A1 (en) | Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device | |
Islam et al. | Commercial viability of different photovoltaic technologies | |
Kushiya et al. | Improved stability of CIGS-based thin-film PV modules | |
Annigoni | Reliability of photovoltaic modules: from indoor testing to long-term performance prediction | |
Osigwe | Thévenin Equivalent of Solar Cell Model | |
Kounouhewa et al. | Damp-heat effects on short circuit current, open circuit voltage and efficiency into crystalline silicon photovoltaic solar modules in tropical zone | |
Visconti et al. | A Survey on Ageing Mechanisms in II and III-Generation PV Modules: accurate matrix-method based Energy Prediction through short-term performance measures | |
de la Parra et al. | A comparative study of degradation and performance of thin film photovoltaic generators versus a multi-crystalline generator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20080730 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20081010 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120223 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120423 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120628 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120727 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5054326 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150803 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |