JP4426024B2 - 熱処理装置の温度校正方法 - Google Patents

熱処理装置の温度校正方法 Download PDF

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Publication number
JP4426024B2
JP4426024B2 JP24891299A JP24891299A JP4426024B2 JP 4426024 B2 JP4426024 B2 JP 4426024B2 JP 24891299 A JP24891299 A JP 24891299A JP 24891299 A JP24891299 A JP 24891299A JP 4426024 B2 JP4426024 B2 JP 4426024B2
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Japan
Prior art keywords
temperature
film thickness
heat treatment
processed
wafer
Prior art date
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Expired - Fee Related
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JP24891299A
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English (en)
Japanese (ja)
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JP2001077041A5 (https=
JP2001077041A (ja
Inventor
富士雄 鈴木
浩一 坂本
文凌 王
もゆる 安原
パンディ プラディープ
シャー スニル
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP24891299A priority Critical patent/JP4426024B2/ja
Priority to KR1020000050637A priority patent/KR100615763B1/ko
Priority to US09/653,460 priority patent/US6329643B1/en
Priority to TW089117803A priority patent/TW476997B/zh
Publication of JP2001077041A publication Critical patent/JP2001077041A/ja
Publication of JP2001077041A5 publication Critical patent/JP2001077041A5/ja
Application granted granted Critical
Publication of JP4426024B2 publication Critical patent/JP4426024B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
JP24891299A 1999-09-02 1999-09-02 熱処理装置の温度校正方法 Expired - Fee Related JP4426024B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP24891299A JP4426024B2 (ja) 1999-09-02 1999-09-02 熱処理装置の温度校正方法
KR1020000050637A KR100615763B1 (ko) 1999-09-02 2000-08-30 열처리 장치의 온도 교정 방법
US09/653,460 US6329643B1 (en) 1999-09-02 2000-08-31 Method of temperature-calibrating heat treating apparatus
TW089117803A TW476997B (en) 1999-09-02 2000-08-31 Method of temperature-calibrating heat treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24891299A JP4426024B2 (ja) 1999-09-02 1999-09-02 熱処理装置の温度校正方法

Publications (3)

Publication Number Publication Date
JP2001077041A JP2001077041A (ja) 2001-03-23
JP2001077041A5 JP2001077041A5 (https=) 2006-10-19
JP4426024B2 true JP4426024B2 (ja) 2010-03-03

Family

ID=17185281

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24891299A Expired - Fee Related JP4426024B2 (ja) 1999-09-02 1999-09-02 熱処理装置の温度校正方法

Country Status (4)

Country Link
US (1) US6329643B1 (https=)
JP (1) JP4426024B2 (https=)
KR (1) KR100615763B1 (https=)
TW (1) TW476997B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551515B2 (ja) * 1998-10-07 2010-09-29 株式会社日立国際電気 半導体製造装置およびその温度制御方法
US6850322B2 (en) * 2000-12-29 2005-02-01 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace
JP4731755B2 (ja) * 2001-07-26 2011-07-27 東京エレクトロン株式会社 移載装置の制御方法および熱処理方法並びに熱処理装置
JP2003074468A (ja) * 2001-08-31 2003-03-12 Toshiba Corp 真空排気システム及びその監視・制御方法
DE10216610A1 (de) * 2002-04-15 2003-10-30 Wacker Siltronic Halbleitermat Verfahren zur Temperaturkalibrierung eines Hochtemperaturreaktors
JP2004071987A (ja) * 2002-08-08 2004-03-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP3853302B2 (ja) 2002-08-09 2006-12-06 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US7619184B2 (en) * 2003-03-04 2009-11-17 Micron Technology, Inc. Multi-parameter process and control method
DE102004051409B4 (de) * 2004-10-21 2010-01-07 Ivoclar Vivadent Ag Brennofen
DE602005009159D1 (de) * 2005-06-10 2008-10-02 Soitec Silicon On Insulator Kalibrierverfahren für Apparaturen zur thermischen Behandlung
JP5200492B2 (ja) * 2007-10-31 2013-06-05 株式会社Ｓｕｍｃｏ 気相成長装置の温度計の校正方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
WO2013180010A1 (ja) * 2012-05-28 2013-12-05 株式会社日立国際電気 基板処理装置、温度計測システム、処理装置の温度計測方法、搬送装置及び記録媒体
US9658118B2 (en) 2012-11-16 2017-05-23 Linear Technology Corporation Precision temperature measurement devices, sensors, and methods
US11513042B2 (en) * 2015-01-26 2022-11-29 SPEX SamplePrep, LLC Power-compensated fusion furnace
CN111719130B (zh) * 2020-06-22 2022-10-21 北京北方华创微电子装备有限公司 半导体镀膜设备中的温度调整方法及半导体镀膜设备
JP7754586B2 (ja) * 2021-06-08 2025-10-15 東京エレクトロン株式会社 温度補正情報算出装置、半導体製造装置、プログラム、温度補正情報算出方法
CN115903718B (zh) * 2021-08-26 2025-06-27 佛山市信章荣自动化设备有限公司 一种温控器自动热调炉
CN114384946B (zh) * 2021-12-17 2023-03-14 西安北方华创微电子装备有限公司 半导体热处理设备的补偿参数获取方法和设备
US12341038B2 (en) * 2022-01-11 2025-06-24 Applied Materials, Inc. Dynamic and localized temperature control for epitaxial deposition reactors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681931A (en) * 1979-12-10 1981-07-04 Toshiba Corp Oxidizing furnace for semiconductor substrate
US5001327A (en) * 1987-09-11 1991-03-19 Hitachi, Ltd. Apparatus and method for performing heat treatment on semiconductor wafers
JPH03145121A (ja) * 1989-10-31 1991-06-20 Toshiba Corp 半導体熱処理用温度制御装置
US5273424A (en) * 1990-03-23 1993-12-28 Tokyo Electron Sagami Limited Vertical heat treatment apparatus
JPH0690126B2 (ja) * 1990-10-30 1994-11-14 株式会社島津製作所 キャピラリレオメータおよび温度検査棒
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
JPH05267200A (ja) * 1992-03-24 1993-10-15 Hitachi Ltd 半導体熱処理装置
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
KR950001953A (ko) * 1993-06-30 1995-01-04 이노우에 아키라 웨이퍼의 열처리방법
FI94066C (fi) 1994-05-16 1995-07-10 Valmet Paper Machinery Inc Rainamateriaalin valmistuskoneella kuten kartonki- tai paperikoneella ja/tai jälkikäsittelykoneella valmistettavan paperiradan eri poikkiprofiilien kokonaisvaltainen hallintajärjestelmä
JP3504784B2 (ja) * 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
JP3380668B2 (ja) * 1996-01-23 2003-02-24 東京エレクトロン株式会社 温度調整方法、温度調整装置及び熱処理装置
JP3516195B2 (ja) * 1996-05-28 2004-04-05 東京エレクトロン株式会社 塗布膜形成方法及びその装置
WO1999059196A1 (en) * 1998-05-11 1999-11-18 Semitool, Inc. Temperature control system for a thermal reactor
JP3487497B2 (ja) * 1998-06-24 2004-01-19 岩手東芝エレクトロニクス株式会社 被処理体収容治具及びこれを用いた熱処理装置

Also Published As

Publication number Publication date
KR20010030160A (ko) 2001-04-16
KR100615763B1 (ko) 2006-08-25
TW476997B (en) 2002-02-21
US6329643B1 (en) 2001-12-11
JP2001077041A (ja) 2001-03-23

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