TW476997B - Method of temperature-calibrating heat treating apparatus - Google Patents

Method of temperature-calibrating heat treating apparatus Download PDF

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Publication number
TW476997B
TW476997B TW089117803A TW89117803A TW476997B TW 476997 B TW476997 B TW 476997B TW 089117803 A TW089117803 A TW 089117803A TW 89117803 A TW89117803 A TW 89117803A TW 476997 B TW476997 B TW 476997B
Authority
TW
Taiwan
Prior art keywords
temperature
heat treatment
aforementioned
heating
film
Prior art date
Application number
TW089117803A
Other languages
English (en)
Chinese (zh)
Inventor
Fujio Suzuki
Koichi Sakamoto
Wenling Wang
Moyuru Yasuhara
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW476997B publication Critical patent/TW476997B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
TW089117803A 1999-09-02 2000-08-31 Method of temperature-calibrating heat treating apparatus TW476997B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24891299A JP4426024B2 (ja) 1999-09-02 1999-09-02 熱処理装置の温度校正方法

Publications (1)

Publication Number Publication Date
TW476997B true TW476997B (en) 2002-02-21

Family

ID=17185281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089117803A TW476997B (en) 1999-09-02 2000-08-31 Method of temperature-calibrating heat treating apparatus

Country Status (4)

Country Link
US (1) US6329643B1 (https=)
JP (1) JP4426024B2 (https=)
KR (1) KR100615763B1 (https=)
TW (1) TW476997B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9658118B2 (en) 2012-11-16 2017-05-23 Linear Technology Corporation Precision temperature measurement devices, sensors, and methods

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551515B2 (ja) * 1998-10-07 2010-09-29 株式会社日立国際電気 半導体製造装置およびその温度制御方法
US6850322B2 (en) * 2000-12-29 2005-02-01 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer thickness uniformity in a multi-zone vertical furnace
JP4731755B2 (ja) * 2001-07-26 2011-07-27 東京エレクトロン株式会社 移載装置の制御方法および熱処理方法並びに熱処理装置
JP2003074468A (ja) * 2001-08-31 2003-03-12 Toshiba Corp 真空排気システム及びその監視・制御方法
DE10216610A1 (de) * 2002-04-15 2003-10-30 Wacker Siltronic Halbleitermat Verfahren zur Temperaturkalibrierung eines Hochtemperaturreaktors
JP2004071987A (ja) * 2002-08-08 2004-03-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP3853302B2 (ja) 2002-08-09 2006-12-06 東京エレクトロン株式会社 熱処理方法及び熱処理装置
US7619184B2 (en) * 2003-03-04 2009-11-17 Micron Technology, Inc. Multi-parameter process and control method
DE102004051409B4 (de) * 2004-10-21 2010-01-07 Ivoclar Vivadent Ag Brennofen
DE602005009159D1 (de) * 2005-06-10 2008-10-02 Soitec Silicon On Insulator Kalibrierverfahren für Apparaturen zur thermischen Behandlung
JP5200492B2 (ja) * 2007-10-31 2013-06-05 株式会社Ｓｕｍｃｏ 気相成長装置の温度計の校正方法
JP5766647B2 (ja) * 2012-03-28 2015-08-19 東京エレクトロン株式会社 熱処理システム、熱処理方法、及び、プログラム
WO2013180010A1 (ja) * 2012-05-28 2013-12-05 株式会社日立国際電気 基板処理装置、温度計測システム、処理装置の温度計測方法、搬送装置及び記録媒体
US11513042B2 (en) * 2015-01-26 2022-11-29 SPEX SamplePrep, LLC Power-compensated fusion furnace
CN111719130B (zh) * 2020-06-22 2022-10-21 北京北方华创微电子装备有限公司 半导体镀膜设备中的温度调整方法及半导体镀膜设备
JP7754586B2 (ja) * 2021-06-08 2025-10-15 東京エレクトロン株式会社 温度補正情報算出装置、半導体製造装置、プログラム、温度補正情報算出方法
CN115903718B (zh) * 2021-08-26 2025-06-27 佛山市信章荣自动化设备有限公司 一种温控器自动热调炉
CN114384946B (zh) * 2021-12-17 2023-03-14 西安北方华创微电子装备有限公司 半导体热处理设备的补偿参数获取方法和设备
US12341038B2 (en) * 2022-01-11 2025-06-24 Applied Materials, Inc. Dynamic and localized temperature control for epitaxial deposition reactors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5681931A (en) * 1979-12-10 1981-07-04 Toshiba Corp Oxidizing furnace for semiconductor substrate
US5001327A (en) * 1987-09-11 1991-03-19 Hitachi, Ltd. Apparatus and method for performing heat treatment on semiconductor wafers
JPH03145121A (ja) * 1989-10-31 1991-06-20 Toshiba Corp 半導体熱処理用温度制御装置
US5273424A (en) * 1990-03-23 1993-12-28 Tokyo Electron Sagami Limited Vertical heat treatment apparatus
JPH0690126B2 (ja) * 1990-10-30 1994-11-14 株式会社島津製作所 キャピラリレオメータおよび温度検査棒
US5387557A (en) * 1991-10-23 1995-02-07 F. T. L. Co., Ltd. Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
JPH05267200A (ja) * 1992-03-24 1993-10-15 Hitachi Ltd 半導体熱処理装置
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
KR950001953A (ko) * 1993-06-30 1995-01-04 이노우에 아키라 웨이퍼의 열처리방법
FI94066C (fi) 1994-05-16 1995-07-10 Valmet Paper Machinery Inc Rainamateriaalin valmistuskoneella kuten kartonki- tai paperikoneella ja/tai jälkikäsittelykoneella valmistettavan paperiradan eri poikkiprofiilien kokonaisvaltainen hallintajärjestelmä
JP3504784B2 (ja) * 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
JP3380668B2 (ja) * 1996-01-23 2003-02-24 東京エレクトロン株式会社 温度調整方法、温度調整装置及び熱処理装置
JP3516195B2 (ja) * 1996-05-28 2004-04-05 東京エレクトロン株式会社 塗布膜形成方法及びその装置
WO1999059196A1 (en) * 1998-05-11 1999-11-18 Semitool, Inc. Temperature control system for a thermal reactor
JP3487497B2 (ja) * 1998-06-24 2004-01-19 岩手東芝エレクトロニクス株式会社 被処理体収容治具及びこれを用いた熱処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9658118B2 (en) 2012-11-16 2017-05-23 Linear Technology Corporation Precision temperature measurement devices, sensors, and methods

Also Published As

Publication number Publication date
KR20010030160A (ko) 2001-04-16
KR100615763B1 (ko) 2006-08-25
JP4426024B2 (ja) 2010-03-03
US6329643B1 (en) 2001-12-11
JP2001077041A (ja) 2001-03-23

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