JPS5681931A - Oxidizing furnace for semiconductor substrate - Google Patents

Oxidizing furnace for semiconductor substrate

Info

Publication number
JPS5681931A
JPS5681931A JP15907679A JP15907679A JPS5681931A JP S5681931 A JPS5681931 A JP S5681931A JP 15907679 A JP15907679 A JP 15907679A JP 15907679 A JP15907679 A JP 15907679A JP S5681931 A JPS5681931 A JP S5681931A
Authority
JP
Japan
Prior art keywords
temperature
substrate
pid
thermoelectric couple
heater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15907679A
Other languages
Japanese (ja)
Inventor
Tomio Kashihara
Shinichi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15907679A priority Critical patent/JPS5681931A/en
Publication of JPS5681931A publication Critical patent/JPS5681931A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To control a heater input by a method wherein a thermoelectric couple indicating a temperature lowering as that of a substrate is arranged near the substrate and the signal is processed through proportional integral differential (PID) processing for the set temperature, and the set value is corrected by changing-over a resistance in accordance with the temperature difference to the substrate and then, the corrected value is processed through the PID processing for a heater temperature. CONSTITUTION:When a thermoelectric couple 15d is equipped in a stainless pipe having an approximately 1mm. thickness, is inserted into a quartz glass tube having an approximately 1mm. thickness and arranged close to an Si substrate, the substrate temperature A and the thermoelectric couple temperature B increase gradually as a lot proceeds. According to an SiO2 film thickness, it drops by DELTAT1 in the same way. The difference between the detection temperature T4 of the thermoelectric couple 15d and the set value is operated through PID and the result is added to set values T1-T3 of each heater. Whereas, since the temperature of the substrate drops at each lot as DELTAT11, DELTAT12... an equivalent quantity to DELTATIN is previously set at a resistance ratio R0/(R0+R1), R0/(R0+R2)... and it is changed-over every time to be added to the corrected signal and it is operated through a PID operation with DELTAT1-T3 to control heaters 14c-14d. With this constitution, a temperature control of high accuracy can be performed and a yield is improved.
JP15907679A 1979-12-10 1979-12-10 Oxidizing furnace for semiconductor substrate Pending JPS5681931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15907679A JPS5681931A (en) 1979-12-10 1979-12-10 Oxidizing furnace for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15907679A JPS5681931A (en) 1979-12-10 1979-12-10 Oxidizing furnace for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5681931A true JPS5681931A (en) 1981-07-04

Family

ID=15685686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15907679A Pending JPS5681931A (en) 1979-12-10 1979-12-10 Oxidizing furnace for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5681931A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108323A (en) * 1989-09-19 1991-05-08 Watkins Johnson Co Heating method for heater assembly and substrate
KR100615763B1 (en) * 1999-09-02 2006-08-25 동경 엘렉트론 주식회사 Method of temperature-calibrating heat treating apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108323A (en) * 1989-09-19 1991-05-08 Watkins Johnson Co Heating method for heater assembly and substrate
JPH0652722B2 (en) * 1989-09-19 1994-07-06 ワトキンズ―ジョンソン カンパニー Heater assembly and substrate heating method
KR100615763B1 (en) * 1999-09-02 2006-08-25 동경 엘렉트론 주식회사 Method of temperature-calibrating heat treating apparatus

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