564504 A7 __ B7 五、發明説明（彳） 發明所屬之技術領域 (請先閲讀背面之注意事項再填寫本頁) 本發明是關於一種對於半導體晶圓等的基板進行熱處 理的熱處理裝置及熱處理方法。 先前技術 有在半導體元件的製程所使用的對於多數枚半導體晶 圓（以下稱爲晶圓）一倂進行所謂如依CVD(chemical vapor deposition)的成膜處理或氧化，擴散處理的熱處理的縱型熱 處理裝置。該裝置是在種爲晶圓舟的保持具棚架狀地保持 多數枚晶圓，之後將上述保持具從下方側搬入在如縱型的 熱處理爐內，將處理環境作爲所定溫度加熱環境，進行熱 處理者。一般，熱處理爐是上下地分割成複數被加熱區域， 能每一各區域施以溫度控制地，具備複數加熱手段及各該 對應的溫度控制手段所構成。 經濟部智慧財產局員工消費合作社印製 然而本案發明人檢討作爲加熱手段使用碳線加熱器的 如第8圖所示的縱型熱處理裝置。第8圖中，符號101是 下方側開口的反應容器；在其周圍設有如被分割成上下3 段的加熱器200。加熱器200是由加熱處理領域的大部分的 主加熱器202，及設在其上下的副加熱器201，203所構成 。該裝置是棚架狀地保持多數枚晶圓W的晶圓舟103，經 由開口部102被搬入至反應管101內，則設在該晶圓舟103 的下端的蓋體104塞住開口部102，將反應管101內加熱成 所定溫度俾進行所定的熱處理。 又，能分別檢測各加熱器200所負責的熱處理環境的 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -4- 564504 A7 B7 五、發明説明（2) (請先閲讀背面之注意事項再填寫本頁) 溫度地，在反應管101的內側設有內部熱電偶300(301〜303) ，又在各加熱器200的近旁部位設有外部熱電偶400(401〜 403)，並將各熱電偶300，400所得到溫度檢測値取入至設 在每一各加熱器200(201〜203)的控制部500(501〜503)所構成 。亦即，控制部500(501〜503)是成爲依據上述溫度檢測値與 設定在每一各段的溫度目標値，在對應的每一加熱器200( 201〜203)可分別進行發熱量控制。 然而，在搬入晶圓舟1 03時，下部側的副加熱器203近 旁，受到經由開口部1 02流進反應管1 0 1內的外部環境的影 響，溫度比主加熱器202近旁低。在此種狀況下從開口部 1 02搬入冷的（比反應管1 01內的環境低的溫度）晶圓w及晶 圓舟103時，則首先副加熱器203近旁的溫度更降低，隨著 晶圓舟1 03上昇，則主加熱器202近旁及上部側的副加熱器 201近旁也受到影響而使溫度降低。 經濟部智慧財產局員工消費合作社印製 因此，加熱器2 0 0近旁的溫度是比上部側更高，又晶 圓W及晶圓舟103的溫度是隨著其位置上昇而藉著加熱器 200被加溫被逐漸地變高之故，因而加熱器200近旁的上下 方向溫度分布是隨著晶圓舟1 03的位置時時變化。所以下 端部側的副加熱器203近旁的溫度因晶圓舟1 03的搬入而 急激地降低之故，因而控制部503是對於副加熱器203的投 入電力作用成較大。又，主加熱器202近旁的溫度是因晶 圓舟103的投入而降低，惟該程度是比副加熱器203近旁更 少之故，因而依控制部502的電力投入量是不太大。如此 地使得主加熱器202的溫度控制與副加熱器203的溫度控 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -5- 564504 Α7 _____Β7 五、發明説明（3 ) (請先閱讀背面之注意事項再填寫本頁) 制成爲互相不相同者，而且隨著加熱器200近旁的上下方 向的溫度分布變化，其不同方式地變化，又，雙方區域的 溫度變化互相地影響。 如此溫度控制狀態不同的現象，是在上端部側的副加 熱器201與主加熱器202之間也產生，結果，晶圓舟1〇3的 搬入（裝載）終了後的各加熱器200近旁的溫度的安定化有產 生費時的問題點。搬入晶圓舟103後，一般將反應管101內 部昇溫至所定處理溫度，若昇溫前反應管1 〇 1內的溫度未 安定，則昇溫後的溫度的安定化費時，結果會成爲降低生 產量。 發明內容 本發明是依據此些事情而創作者，其目的是在於提供 在被分割成複數區域的熱處理環境內進行基板處理，即可 快速地穩定每一各區域的溫度，並可提高生產量的技術。 經濟部智慧財產局員工消費合作社印製 本發明的熱處理裝置，其特徵爲：具備被分割成複數區β 域的反應容器，及支持複數基板而且被搬入至反應容器內 的基板保持具，及設於每一各區域的加熱手段，及設於每 一各區域的溫度檢測部，及設於每一各區域，獨立各加熱 手段並加以控制的控制部；對應於一區域的控制部是具有 在上述基板搬入時，依據對應於該一區域的控制部的溫度 檢測値，將對應於其他區域的溫度檢測部的溫度檢測値作 爲溫度目標値進行運算，並將該運算結果輸出作爲加熱手 段的控制信號的第1運算部。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） -6- 564504 A7 _ B7_ 五、發明説明（4 ) (請先閲讀背面之注意事項再填寫本頁) 本發明的溫度檢測部是包含檢測加熱手段近旁的溫度 的第1溫度檢測部；對應於上述其他區域的溫度檢測部的 溫度檢測値的第1溫度檢測部的溫度檢測値。 本發明的溫度檢測部是包含檢測反應容器內的溫度的 第2溫度檢測部；對應於上述其他區域的溫度檢測部的溫 度檢測値的第2溫度檢測部的溫度檢測値。 本發明的對應於一區域的控制部是又具有在熱處理基 板時，依據被設定於該一區域的溫度目標値與對應於該一 區域的溫度檢測部的溫度檢測値進行運算，並將該運算結 果輸出作爲加熱手段的控制信號的第2運算部。 經濟部智慧財產局員工消費合作社印製 本發明的溫度檢測部是具有檢測加熱手段近旁的溫度 的第1溫度檢測部，及檢測反應容器內的溫度的第2溫度 檢測部1對應於一區域的控制部的第1演算部是在搬入基 板時，將對應於其他區域的第1溫度檢測部或第2溫度檢 測部的溫度檢測値作爲溫度目標値進行運算，並將該運算 結果輸出作爲加熱手段的控制信號；對應於一區域的控制 部是又具有在熱處理基板時，依據被設定在該一區域的溫 度目標値與對應於該區域的第1溫度檢測部及第2溫度檢 測部的各溫度檢測値進行運算，並將該運算結果輸出作爲 加熱手段的控制信號的第2運算部。 本發明的對應於一區域的控制信號的第1運算部，是 依據在對應於其他區域的溫度檢測部的溫度檢測値相加修 正値的數値與對應於該一區域的溫度檢測部的溫度檢測値 的偏差分量進行運算，並將該運算結果輸出作爲加熱手段 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 564504 A7 ____B7_ 五、發明説明（5 ) 的控制信號。 (請先閱讀背面之注意事項再填寫本頁) 本發明的對應於於一區域的控制部的第1運算部，是 在熱處理基板時，將被設定在一區域的溫度目標値與對應 於其他區域的溫度目標値的相差分量使用作爲修正値。 本發明的對應於一區域的控制部的第1運算部，是依 據在上述偏差分量相乘所定比率的數値進行運算。 本發明的反應容器是縱型地構成，而且基板保持具是 從反應容器下方側被搬入；反應容器內是在上下方向被分 割成至少3段；上述一區域是最下段區域；上述其他區域 是最上段以外的區域。 本發明的熱處理方法，屬於在被分割成複數區域的反 應容器內搬入支持複數基板的基板保持具，藉著分別對應 於上述複數區域的加熱手段加熱各區域的熱處理方法，其 特徵爲：具備檢測對應於各區域的溫度的過程，及依據溫度 目標値與每一各區域的溫度檢測値控制各加熱手段的過程； 在搬入上述基板保持具時，作爲一區域的溫度目標値使用 對應於其他區域的溫度檢測値控制加熱手段。 經濟部智慧財產局員工消費合作社印製 本發明在搬入上述基板保持具時，一區域的溫度目標 値是在對應於其他區域的溫度檢測値相加修正値的數値所 構成。 本發明在搬入上述基板保持具時，將被設定在熱處理 基板時的一區域的溫度目標値與對應於其他區域的溫度目 標値的相差分量使用作爲修正値。 本發明在搬入上述基板保持具時，控制對應於上述一 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8- 564504 A7 B7 五、發明説明（6 ) (請先閱讀背面之注意事項再填寫本頁) 區域的加熱手段之際，依據在該區域的溫度檢測値，及從 對應於其他區域的溫度檢測値所求出的溫度目標値或在溫 度目標値相加修正値的數値的偏差分量相乘所定比率的數 値進行運算。 依照本發明，在將基板搬入反應容器內時，一區域的 溫度控制追隨其他區域的溫度控制之故，因而搬入基板之 後，快速地安定反應容器內的溫度。然後，例如將反應容 器內的溫度加溫至處理溫度，則快速地安定處理溫度。又， 本發明是也可適用搬入基板時各區域的溫度與處理時的各 區域的溫度相同情形。 實施方式 經濟部智慧財產局員工消費合作社印製 第1圖是表示將本發明適用於縱型熱處理裝置的實施 形態的整體構成圖。首先簡述該縱型熱處理裝置的整體構 成；該裝置是如兩端開口的內管la及上端封閉的外管lb 所構成的如石英製雙重構造的反應管1。反應管1內是在上® 下方向被區劃成三個區域Zi，Z2，Z3。在反應管1的周圍， 筒狀隔熱體21固定設在基座體22，而在該隔熱體21的內 側設有加熱手段的如電阻發熱體所構成的加熱器3及頂部 力口熱器31。加熱器3是如在上下被三段分割（3a，3b ，3c)， 被設於隔熱體21的側壁，頂部加熱器31是設在頂部。加 熱器3a是對應設於區域Z!，加熱器3b是對應設於區域Z2， 加熱器3c是對應設於區域Z3。 加熱器3(3a〜3c)中的中段區域Z2的加熱器3b，是如第 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 564504 A7 B7 五、發明説明（7 ) —.丨K----------- (請先閱讀背面之注意事項再填寫本頁) 1圖所示地形成反應管1內的大部分熱處理環境的所謂主加 熱器；配置於其上下的加熱器3a，3c是分別形成反應管1 的上端部及下端部的熱處理裝置的比主加熱器更小型的所 謂副加熱器。作爲加熱器3的原材料，是可使用將藉著編 入使用如線徑10// m左右的高純度碳纖維的複數束所形成 的碳線封閉在陶瓷如外徑十數m m的透明石英管中者。又， 加熱器3是並不被限定於此者，例如鐵-鉬·碳合金等的金屬 體也可以。 _ 內管la及外管lb是在下部側被支持在筒狀岐管23上， 而在該岐管23，於內管la內側的下部領域能開口供給口 地設有氣體供給管24，而且能從內管la與外管lb之間排 氣地如在未圖示的真空泵連接有一端側被連接的排氣管25 。在此例，藉著內管la，外管lb及岐管23構成反應容器 〇 經濟部智慧財產局員工消費合作社印製 設有蓋體11成爲能塞住岐管23的下端開口部，該蓋 體11是設在晶舟昇降機12上面。在蓋體11上設有保溫單 元1 3，及與設在晶舟昇降機1 2的驅動部1 4連接，貫穿保 溫單元13內部所設置的旋轉軸15,及藉著該旋轉軸15旋 轉自如地保持具下端的形成基板保持具的晶圓舟1 6。晶圓 舟1 6是作成棚架狀地可保持多數基板的晶圓W的構成，又 ，保溫單元13是作成組合石英凸片等隔熱單元13a及發熱 體單元13b等的構成。 在內管11a內設有熱電偶用的細石英管40，在該石英 管40內，如分別檢測被分割成三段的各加熱器3(3a，3b，3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -10- 564504 A7 B7 五、發明説明（8) (請先閱讀背面之注意事項再填寫本頁) c)所負責的區域Z!，z2，z3的溫度地，在每一各區域Zl〜Z3 設內部溫度檢測部的三個內部熱電偶（第2溫度檢測部）4(4a， 4b，4c)。又，在加熱器3(3a，3b，3c)的近旁，每一各區 域Z:〜Z3地設有分別檢測加熱器3(3a，3b，3c)的溫度的外部 溫度檢測部的外部熱電偶（第1溫度檢測部）5(5a，5b，5c)。 對應於各段的區域Z!〜Z3的加熱器3(3a，3b，3c)，設有 供給電力的電力供給部20(20a，20b，20c)，及控制各該電 力供給部20(20a，20b，20c)的供給電力而控制各加熱器3(3 a，3b，3c)的發熱量所需的控制部6，7，8。詳細是如下述， 在此簡述關連部位的配線構成；內部熱電偶4(4a，4b，4c) 及外部熱電偶5(5a，5b，5c)與各該對應的各段區域Z!〜Z3的 控制部6，7，8的任一相連接，設於加熱器3b所負責的中 段區域的外部熱電偶5b所延伸的信號線，是在途中分岐不 但連接於控制部7，也連接於控制部6，8。又，在設於隔熱 體21的頂部的頂部加熱器31，也與加熱器3(3a，3b，3c)同 樣地設有熱電偶32，從控制部33經由電力供給部34控制 對於加熱器3 1的供電量，作成可進行調節發熱量的構成。 經濟部智慧財產局員工消費合作社印製 在加熱器3(3a，3b，3〇及連接於加熱器的控制部6，7, 8中，作成如上述的配線構造的理由，是作成可切換運用在 各段的每一區域Zi〜Z3地分別控制加熱器3的情形，及在其 他部位利用對應於形成在主加熱器的加熱器3b的外部熱電 偶5b的溫度檢測値，而在加熱器3a, 3c進行所謂追隨控制 的情形。以下一面參照第2圖一面進行說明形成本實施形 態的要部的加熱器3的控制系統的構成。 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X297公釐） -11 - 564504 A7 _____B7 五、發明説明（9 ) (請先閲讀背面之注意事項再填寫本頁) 首先，控制部6.8是如上述地須分別使用兩種運算方法 。所以控制部6是具有第1運算部61與第2運算部62;控 制部8是具有第1運算部81與第2運算部82。不必切換運 算方向的控制部7是僅具有第2運算部72(71是方便上缺少 。亦即，控制部6，8的第1運算部61，81是控制部6，8 進行追隨於控制部7(正確爲追隨於控制部7的負責的區域 Z2所得到的溫度檢測値）的運算之際被使用者。所以，從上 述外部熱電偶5b所延伸的信號線是在控制部6連接第1運 算部61，而在控制部8連接第1運算部81。 經濟部智慧財產局員工消費合作社印製 另一方面，第2運算部62，72，82是依據從設在對應 的每一區域Z!〜Z3的內部熱電偶4(4a，4b，4c)及外部熱電偶 5(5a，5b，5c)所得到的溫度檢測値，及分別專用地被設定 在各該區域Z!〜Z3的溫度目標値進行運算之故，因而在第2 運算部62(72，82)連接有內部熱電偶4a(4b，4c)，外部熱電 偶5a(5b，5c)及目標値輸出部63(7 3，83)。由第1運算部61 ，81或第2運算部62，72，8 2所輸出的運算結果，是作爲 控制信號被輸出至電力供給部20(20a，20b，20c)的構成。 又在控制部6(8)是成爲藉著切換部64(84)可選擇地使用第1 運算部61(81)或第2運算部62(82)的任一種。 在此說明第1運算部61，81的構成，惟此些是具有相 同構造之故，因而以第1運算部81爲例子一面參照第3圖 一面加以說明。第3圖中元件符號8 11是比較運算部，元 件符號812是修正値輸出部；在比較運算部811，將設於中 段區域Z2的外部熱電偶5b的溫度檢測値作爲溫度目標値， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -12- 564504 A7 ___B7_ 五、發明説明（1〇) (請先閲讀背面之注意事項再填寫本頁) 對於該溫度目標値相加從修正値輸出部8 1 2所輸出的修正 値，又減去設在下段區域Z3的外部熱電偶5c的溫度檢測値 。上述修正値是修正中段區域Z2及下段區域Z3的處理時的 目標溫度相差所需的所謂靜式修正要素。具體而言，該修 正値是作爲如下述第2運算部72，82所使用的目標値輸出 部73，83所輸出的雙方的溫度目標値的相差分量値所求出 〇 經濟部智慧財產局員工消費合作社印製 在比較運算部811的輸出側，設有對於該輸出値（偏差 分量）ql相乘所定常數k的乘算部813。如上所述地，控制 部8所對應的下段區域Z3是最接近於反應管la的下方側開 口部，容易受到與晶圓舟16 —起流進的冷空氣的影響之故， 因而與中段區域Z2相比較昇溫所需的加熱輸出變多。考 慮該事項，在乘算部8 1 3爲了將來自比較運算部8 1 1的輸出 的增加分量反應在輸出値，對於輸出値ql進行乘以所定常 數k的所謂動式修正。在乘算部813，常數k値是使用如 1.2(在對應於冷氣影響較小的上段區域Z!的第1運算部61 爲如0.8)。對於該輸出値，進行積分要素II，比例要素P1， 微分要素D1的各種運算（PID運算），經由混合部814輸出 進行對應於上述偏差分量ql的電力供給所需的輸出値B1。 以下說明第2運算部62，7 2，82的構成，惟與上述的 第1運算部之情形同樣樣地均具有相同構造之故，因而以 第2運算部82作爲例子一面參照第4圖一面加以說明。該 第2運算部82是進行將內部熱電偶4c的溫度檢測値組裝 於大環路，並將外部熱電偶5c的溫度檢測値組裝於小環路 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -13- 564504 A7 B7 五、發明説明（n) 的級聯控制以得到控制信號B2者；元件符號821〜824是表 示比較運算部，II是表示積分要素，P2是表示比例要素， (請先閲讀背面之注意事項再填寫本頁} D2是表示積分要求。 如上所述的控制部6，實際上由CPU,存儲有程式的 ROM及記錄溫度設定値的記憶體等所構成；又藉著各運算 程式軟體式地進行者，惟在本實施形態，以硬體構成進行 此些運算也可以。又從切換部84(64)的第1運算部8 1(61)切 換至第2運算部82(62)的時機，是例如搬入晶圓舟16之後 在昇溫前使得反應容器內的溫度檢測爲安定時，或是搬入 晶圓舟1 6之後，經過所定時間之後，或相反的切換時機如 在處理後，使得反應容器內降溫至所定溫度時等。 以下，說明上述的實施形態的作用。 經濟部智慧財產局員工消費合作社印製 對於上述裝置的晶圓W的加熱，是由設於該反應管1 的側方側的加熱器3及設在上部側的頂部加熱器31所進行 。本實施形態的要部是在於分割所設置的加熱器3(3a，3b， 3c)的控制方式之故，因而一面著重於此方式一面也參照® 第5圖進行說明。首先將基板的晶圓W棚架狀地裝載的晶 圓舟16，是在第5圖的tl時機，上昇晶舟昇降機12而開 始被搬入至反應容器（反應管1及岐管23)內。此時反應管1 內是已被加熱成例如的600°C的所定溫度，而在對應於上下 段區域Z!，Z3的控制部6，8，如上所述地在切換部64，84 選擇第1運算部61，81成爲追隨於中段區域Z2的溫度控制 〇 首先，晶圓舟1 6的上端部開如進入反應容器內時，晶 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14- 564504 A7 _B7_ 五、發明説明（12) (請先閱讀背面之注意事項再填寫本頁) 圓舟16及晶圓W是之前仍位在反應容器外面之故，因而較 冷，爲了此，副加熱器3c的負責範圍的反應容器的下段區 域1的溫度會一旦變低。又，主加熱器3b的負責範圍的中 段區域Z2的溫度也受到較冷晶圓舟1 6的影響會變低，惟中 段區域Z2的溫度下降是比下段區域Z3的溫度下降程度較小 。然後，晶圓舟1 6到達中段區域Z2時，則該中段區域Z2 的溫度也降低。這時候，晶圓舟1 6及晶圓W是隨著上昇反 應容器內徐徐地被加溫之故，因而中段區域Z2是成爲比晶 圓舟16的搬入前的溫度更低，惟不會比下段區域Z3者低。 經濟部智慧財產局員工消費合作社印製 如此，晶圓舟1 6被搬入反應容器內時，則下段區域Z3 最被冷卻，中段區域Z2也被冷卻，而上段區域2!成爲稍被 冷卻的狀態。在對應於下段區域Z3的控制部8，外部熱電 偶5c的溫度變低之故，因而擬急激地增加對於副加熱器3c 的供給電力，惟在溫度目標値的中段區域Z2的溫度檢測値 也降低之故，因而隨著該降低而稍微抑制對於副加熱器3c 的電力供給增加。之後，隨著中段區域Z2的溫度檢測値的 上昇，下段的副加熱器3c的溫度變高。然後，在中段區域 Z2，外部熱電偶5b的溫度超過溫度目標値而成爲過調節的 狀態，之後，外部熱電偶5b的溫度朝溫度目標値降低。追 隨於中段區域Z2的此種溫度的動作，控制對於下段區域Z3 的副加熱器3c的電力供給量，副加熱器3c的溫度配合於中 段區域Z2的副加熱器3b的溫度收束被收束在溫度目標値。 又，在上段區域Z!的副加熱區域3a，也追隨於中段區 域Z2的主加熱器3b的溫度動作而電力供給量被控制，配合 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ' -15- 564504 A7 _B7_ 五、發明説明（13) (請先閲讀背面之注意事項再填寫本頁) 於中段區域z2的主加熱電器偶3b的溫度收束被收束在溫度 目標値。又，副加熱器3c(3a)收束的溫度，是如第3圖所示 地，在中段區域Z2的溫度檢測値進行相加修正値的運算之 故，因而如在熱處理時（處理時），下段區域Z3的溫度目標値 比中段區域Z2高如l〇°C，則下段區域Z3的副加熱器3c收 束的溫度，是成爲比主加熱器3b的溫度高約1(TC的數値。 經濟部智慧財產局員工消費合作社印製 在t2時機，完成搬入晶圓舟16，而在t3時機，若反應 容器內的各區域溫度安定，則控制部6，8是從第1運算部 61，81切換成第2運算部62，82，進行控制加熱器3a，3c 的電力。之後，從t3時機開始昇溫，加熱至所定處理溫度 之後，在t4時機（更具體而言，各區域安定成處理溫度之後 )，進行對於晶圓W之熱處理。作爲該熱處理之一例子，有 如將反應容器內維持在約800t，將所定成膜氣體從氣體供 給管23供給於反應容器內，同時從排氣管25真空排氣而 被維持在所定真空度，對於晶圓W進行成膜處理的處理。 又，從第1運算部61，81切換成第2運算部62，82，是在1 昇溫途中或安定在處理溫度時也可以。在t5時機中，在晶 圓W表面形成有所定成膜時，如降低至搬入時的溫度的約 600t之後，例如在t6時機中，用與搬入時相反順序進行晶 圓舟1 6的搬出。 如上所述，依照上述實施形態，在複數分割所設置的 加熱器3(3a，3b，3c)的溫度控制中，負責上下段區域Z!，Z3 的加熱控制的控制部6，8，是在搬入晶圓W時，將中段區 域Z2的溫度檢測値作爲溫度目標値，並依據該溫度目標値 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16- 564504 A7 _B7_ 五、發明説明（14) (請先閱讀背面之注意事項再填寫本頁) 與本身區域Z!，z3的溫度檢測値進行溫度控制。所以，各 區域Z!〜z3的溫度快速地安定於溫度目標値。例如，對於下 段區域Z!的副加熱器3c近旁，溫度因搬入晶圓舟1 6而降 低，惟溫度目標値的中段區域Z2的主加熱器3b近旁的溫度 也降低之故，因而溫度目標値與溫度檢測値的偏差分量變 小，而可緩和地抑制副加熱器3c的發熱量增加。又，副加 熱器3c近旁的溫度是超調節成爲超過溫度目標値，而現在 欲減小副加熱器3c的發熱量（溫度變低），惟副加熱器3c的1 發熱量是追隨主加熱器3b近旁的溫度之故，因而如習知地 與溫度目標値成爲一定之情形相比較可緩和地進行溫度降 低。結果，抑制溫度上下的振動而快速地軟著陸在溫度目 標値。又，對於上段區域冗！的副加熱器3a近旁的溫度也追 隨於主加熱器3b近旁的溫度之故，因而溫定快速地安定在 溫度目標値。 經濟部智慧財產局員工消費合作社印製 又，較低晶圓舟1 6及晶圓W被搬入至反應容器內時， 各區域Z!〜Z3的溫度隨著從晶圓舟16及晶圓W所受影響的1 程度而在控制部6，8的第1運算部61，81中，組裝對於中 段區域Z2的控制部7的追隨比率。例如在上述的例子中， 上段區域Z!所受影響的程度是小於中段區域Z2所受影響的 程度，又，下段區域Z3所受影響的程度是大於中段區域L 所受影響的程度之故，因而下段區域Z!的控制部6的追隨 比率是設定在0.8，而下段區域Z3的控制部8的追隨比率是 設定在1.2。第6圖是表示中段區域Z2的外部熱電偶5b的 溫度檢測値變化，及將追隨比率改變成5%，30%，100%時 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17- 564504 A7 __B7_ 五、發明説明（15) (請先閲讀背面之注意事項再填寫本頁) 的上段區域Z!的各溫度檢測値者，由該圖可知，上段區域 Z!的外部熱電偶5a的溫度檢測値的變化寬是追隨比率變大 則增加，而追隨比率變小則減少。因此，如上述實施形態 地，藉著調整對於主加熱器3b的副加熱器3a，3c的溫度控 制的追隨比率。在上段區域Z!，下段區域1分別可進行相抵 於搬入晶圓舟1 6時的反應容器內的溫度分布的溫度控制， 由此點也可使各區域的溫度快速地安定在溫度目標値。又， 搬入晶圓舟1 6後的各區域的溫度安定時間會很大地左右 生產量之故，因而在該實施形態可提高生產量。 第7圖是表示在圖示於第1圖的縱型熱處理裝置中， 晶圓舟16被搬入至反應容器內前的副加熱電器3a近旁，主 加熱電器3b近旁，副加熱器3c近旁的溫度分別從安定在5 75°C，573°C，560°C的狀態進行晶圓舟16的搬入時的各加 熱電器3a〜3c近旁的溫度的經時變化作成模擬的結果者。 從開始輸入晶圓舟16 —直到各加熱器3a〜3c近旁的溫度成 爲安定化的時間是大約1 3分鐘，可知在P入晶圓W時，各 區域的溫度在短時間成爲安定。 經濟部智慧財產局員工消費合作社印製 又，在第1運算部6 1，8 1的說明中，作爲求出上下段 的各區域Z!〜Z3與中段區域的追隨比率的運算方法，記載著 相乘事先決定的係數k的方法，惟在晶圓舟1 6上昇時，隨 著該晶圓舟16的位置來變更k也可以。又，在本實施形態， 搬入晶圓W時，取入分別對應於各控制部6，7，8的內部 熱電偶4a〜4c的溫度檢測値，而在控制部6，8，將中段區 域Z2的內部熱電偶4b的溫度檢測値作爲溫度目標値，分別 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -18- 564504 A7 _______B7_ 五、發明説明（16) (請先閱讀背面之注意事項再填寫本頁) 與內部熱電偶4a，4c的溫度檢測値相比較，隨著該偏差分 量進行副加熱器3a，3c的溫度控制，同時在控制部7是隨 著專用的溫度目標値與內部熱電偶4b的溫度檢測値的偏差 分量控制主加熱器3b也可以。又，本實施形態是僅對於下 段區域Z3的副加熱器，進行將對應於中段區域1的溫度檢 測値作爲溫度目標値的追隨控制也可以。 如上所述地依照本發明，在被分割成複數區域的熱處 理環境內進行基板處理時，可快速地安定每一各區域的溫 度，可提高生產量。 圖式簡單說明 第1圖是表示本發明的熱處理裝置的實施形態的縱斷 面圖。 第2圖是表示本實施形態所使用的控制部及其關連部 位的方塊圖。 第3圖是表示設於上述控制部內的第1運算部的內部 構成的方塊圖。 經濟部智慧財產局員工消費合作社印製 第4圖是表示設於上述控制部內的第2運算部的內部 構成的方塊圖。 第5圖是表示本實施形態的溫度的經時變化與所使用 的運算部的關係的作用說明圖。 第6圖是表示搬入說明上述第1運算部的作用所需的 作用說明圖。 第7圖是表示晶圓舟時的各外部熱電偶的溫度變化的 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） -19- 564504 A7 B7 五、發明説明（17) 情形的特性圖。 第8圖是表示習知的熱處理裝置的整體構造的縱斷面 (請先閲讀背面之注意事項再填寫本頁) 圖。 主要元件對照 1 反應管 3 加熱器 4 內部熱電偶 5 外部熱電偶 6，7，8 控制部 11 蓋體 12 晶舟昇降機 13 保溫單元 14 驅動部 15 旋轉軸 16 晶圓舟 20,34 電力供給部 21 隔熱體 22 基座體 23 岐管 24 氣體供給管 25 排氣管 31 頂部加熱器 32 熱電偶 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -20- 564504 A7 B7 五、發明説明（18) 經濟部智慧財產局員工消費合作社印製 33 控制部 61，81 第1運算部 62 ， 72 ， 82 第2運算部 73，83 目標値輸出部 64，84 切換部 101 反應容器 102 開口部 103 晶圓舟 104 蓋體 200 加熱器 201 ， 203 副加熱器 300〜303 內部熱電偶 400〜403 外部熱電偶 500〜503 控制部 811 比較運算部 812 修正値輸出部 813 乘算部 814 混合部 821〜824 比較運算部 W 晶圓 (請先閱讀背面之注意事項再填寫本頁) •舞衣· 、訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -21 -564504 A7 __ B7 V. Description of the invention (彳) The technical field to which the invention belongs (Please read the precautions on the back before filling out this page) The present invention relates to a heat treatment device and a heat treatment method for thermally processing substrates such as semiconductor wafers. In the prior art, there is a vertical type in which a plurality of semiconductor wafers (hereinafter referred to as wafers) are subjected to a so-called film formation process such as CVD (chemical vapor deposition), oxidation, or diffusion treatment. Heat treatment device. In this device, a plurality of wafers are held in a rack-like holder in a wafer boat. Then, the holder is moved from a lower side into a vertical heat treatment furnace, and the processing environment is a heating environment at a predetermined temperature. Heat treater. Generally, a heat treatment furnace is divided up and down into a plurality of heated areas, each of which can be temperature-controlled, and includes a plurality of heating means and corresponding temperature control means. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, the inventor of this case reviewed a vertical heat treatment device using a carbon wire heater as a heating means as shown in FIG. 8. In Fig. 8, reference numeral 101 is a reaction container which is opened on the lower side, and a heater 200 is provided around the periphery of the reaction container. The heater 200 is composed of a main heater 202 in most of the heat treatment fields, and sub heaters 201 and 203 provided above and below it. This device is a wafer boat 103 that holds a large number of wafers W in a trellis shape and is carried into the reaction tube 101 through the opening portion 102. A lid 104 provided at the lower end of the wafer boat 103 blocks the opening portion 102. The inside of the reaction tube 101 is heated to a predetermined temperature, and a predetermined heat treatment is performed. In addition, the paper size that can detect the heat treatment environment that each heater 200 is responsible for is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -4- 564504 A7 B7 V. Description of the invention (2) (Please read first Note on the back, please fill in this page again.) In temperature, there is an internal thermocouple 300 (301 ~ 303) inside the reaction tube 101, and an external thermocouple 400 (401 ~ 403) near the heater 200. The temperature detection unit obtained by each of the thermocouples 300 and 400 is taken into a control unit 500 (501 to 503) provided in each of the heaters 200 (201 to 203). That is, the control unit 500 (501 to 503) becomes a temperature target based on the above-mentioned temperature detection and each set temperature, and each of the corresponding heaters 200 (201 to 203) can control the amount of heat generated. However, when the wafer boat 103 was carried in, the temperature near the sub heater 203 on the lower side was affected by the external environment flowing into the reaction tube 101 via the opening 102, and the temperature was lower than that near the main heater 202. In this case, when the wafer w and the wafer boat 103 are brought into the cold (lower temperature than the environment in the reaction tube 101) from the opening 102, the temperature near the sub heater 203 is lowered first. As the wafer boat 103 rises, the vicinity of the main heater 202 and the vicinity of the sub heater 201 on the upper side are also affected and the temperature is lowered. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, the temperature near the heater 200 is higher than the upper side, and the temperature of the wafer W and the wafer boat 103 is increased by the temperature of the heater 200. Because the temperature is gradually increased, the temperature distribution in the vertical direction near the heater 200 changes constantly with the position of the wafer boat 103. Therefore, the temperature near the sub-heater 203 on the lower end side is drastically reduced due to the carrying in of the wafer boat 103, so the control unit 503 has a larger effect on the input power of the sub-heater 203. In addition, the temperature near the main heater 202 is lowered by the input of the crystal boat 103, but the degree is lower than that of the sub heater 203, so the amount of power input by the control unit 502 is not too large. In this way, the temperature control of the main heater 202 and the temperature control of the sub heater 203 are applicable to the Chinese paper standard (CNS) A4 (210X297 mm) -5- 564504 Α7 _____ Β7 V. Description of the invention (3) (Please First read the precautions on the back and then fill out this page.) They are made different from each other, and they change in different ways as the temperature distribution in the vertical direction near the heater 200 changes, and the temperature changes in both areas affect each other. Such a phenomenon that the temperature control state is different is also generated between the sub heater 201 and the main heater 202 on the upper end side. As a result, each heater 200 near the end of the wafer boat 103 is loaded (loaded). The stabilization of temperature has the problem of taking time. After the wafer boat 103 is carried in, the inside of the reaction tube 101 is generally heated to a predetermined processing temperature. If the temperature in the reaction tube 101 before the temperature is not stabilized, the stabilization of the temperature after the temperature rise takes time, and as a result, the yield is reduced. SUMMARY OF THE INVENTION The present invention is based on these things. The object of the present invention is to provide substrate processing in a heat treatment environment that is divided into a plurality of regions, which can quickly stabilize the temperature of each region and increase the throughput. technology. The consumer thermal cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed the heat treatment device of the present invention, which is characterized by including a reaction container divided into a plurality of beta regions, a substrate holder that supports a plurality of substrates and is carried into the reaction container, and The heating means in each area, and the temperature detection section provided in each area, and the control section provided in each area, each of which is independently controlled by the heating means; the control section corresponding to an area is provided with When the substrate is carried in, the temperature detection unit corresponding to the temperature detection unit in the other region is used as the temperature target based on the temperature detection unit of the control unit corresponding to the one region, and the calculation result is output as the control of the heating means. The first arithmetic unit of the signal. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -6- 564504 A7 _ B7_ V. Description of the invention (4) (Please read the precautions on the back before filling this page) The temperature detection section of the invention The first temperature detection unit includes a first temperature detection unit that detects a temperature near the heating means, and a temperature detection unit of the first temperature detection unit that corresponds to the temperature detection unit of the temperature detection unit in the other region. The temperature detection unit of the present invention is a second temperature detection unit including a second temperature detection unit that detects the temperature in the reaction container, and a temperature detection unit of the second temperature detection unit that corresponds to the temperature detection unit of the temperature detection unit in the other region. The control unit corresponding to a region of the present invention further has a calculation based on a temperature target 値 set in the region and a temperature detection 对应 of a temperature detection unit corresponding to the region when the substrate is heat-treated, and the calculation is performed. As a result, a second arithmetic unit is output as a control signal for the heating means. The temperature detection section of the present invention printed by the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economics has a first temperature detection section that detects the temperature near the heating means, and a second temperature detection section 1 that detects the temperature in the reaction container corresponding to an area. The first calculation unit of the control unit calculates the temperature detection 値 of the first temperature detection unit or the second temperature detection unit corresponding to the other area as the temperature target 搬 when the substrate is carried in, and outputs the calculation result as a heating means. Control signal corresponding to a region has a temperature target set in the region when the substrate is heat-treated, and each temperature of the first temperature detection unit and the second temperature detection unit corresponding to the region A second calculation unit that performs detection and performs calculation, and outputs the calculation result as a control signal for the heating means. The first calculation unit of the control signal corresponding to one area of the present invention is based on the temperature detection (addition correction number) of the temperature detection unit corresponding to the other area and the temperature of the temperature detection unit corresponding to the one area. Detect the deviation component of radon to perform calculation, and output the result of the calculation as a heating means. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 564504 A7 ____B7_ V. The control signal of the invention description (5). (Please read the precautions on the back before filling this page.) The first calculation part of the control part corresponding to one area of the present invention is to set the temperature target of one area and the temperature target corresponding to other areas when the substrate is heat-treated. The phase difference component of the temperature target 値 in the region is used as the correction 値. The first calculation unit of the control unit corresponding to one region of the present invention performs calculation based on a value of a predetermined ratio multiplied by the deviation component. The reaction container of the present invention is vertically structured, and the substrate holder is carried in from the lower side of the reaction container; the inside of the reaction container is divided into at least three sections in the vertical direction; the above-mentioned one area is the lowermost area; the other areas are Areas other than the topmost paragraph. The heat treatment method of the present invention belongs to a heat treatment method for carrying in a substrate holder supporting a plurality of substrates in a reaction container divided into a plurality of regions, and heating each region by heating means corresponding to the plurality of regions, respectively. The process corresponding to the temperature of each region, and the process of controlling each heating means according to the temperature target and the temperature detection of each region; when the substrate holder is carried in, it is used as the temperature target of one region and corresponding to other regions. Temperature detection 値 Control heating means. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs When the present invention is moved into the substrate holder, the temperature target 値 in one area is formed by adding and correcting 値 in the temperature detection corresponding to other areas. In the present invention, when the substrate holder is carried in, the phase difference between the temperature target 値 in one area and the temperature target 对应 corresponding to other areas set when the substrate is heat-treated is used as the correction 値. When the present invention is moved into the substrate holder, the control corresponding to the above paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -8- 564504 A7 B7 V. Description of the invention (6) (Please read first (Notes on the reverse side, please fill in this page again) When heating the area, the temperature target 値 in this area and the temperature target 从 obtained from the temperature detection 其他 corresponding to other areas or the temperature target 修正 are added and corrected. The deviation component of the number 値 is multiplied by the number 値 of a predetermined ratio for calculation. According to the present invention, when the substrate is carried into the reaction container, the temperature control in one area follows the temperature control in the other area. Therefore, after the substrate is carried in, the temperature in the reaction container is quickly stabilized. Then, for example, when the temperature in the reaction vessel is increased to the processing temperature, the processing temperature is quickly stabilized. In addition, the present invention is also applicable to the case where the temperature of each region when the substrate is carried in is the same as the temperature of each region during processing. Embodiment 1 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Fig. 1 is an overall configuration diagram showing an embodiment in which the present invention is applied to a vertical heat treatment apparatus. First, the overall structure of the vertical heat treatment device will be briefly described; the device is a reaction tube 1 made of quartz, which has a double structure, such as an inner tube la opened at both ends and an outer tube lb closed at the upper end. The inside of the reaction tube 1 is divided into three regions Zi, Z2, and Z3 in the up-down direction. Around the reaction tube 1, a cylindrical heat insulator 21 is fixed to the base body 22, and a heater 3, such as a resistance heating element, and a top opening heat are provided inside the heat insulator 21 for heating means.器 31。 31. The heater 3 is divided into three sections (3a, 3b, 3c) above and below, and is provided on the side wall of the heat insulator 21, and the top heater 31 is provided on the top. The heater 3a is provided corresponding to the zone Z !, the heater 3b is provided corresponding to the zone Z2, and the heater 3c is provided corresponding to the zone Z3. The heater 3b in the middle zone Z2 of the heater 3 (3a ~ 3c) is the same as the paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -9-564504 A7 B7 V. Description of the invention (7 ) —. 丨 K ----------- (Please read the precautions on the back before filling this page) The so-called main heater that forms most of the heat treatment environment in the reaction tube 1 as shown in the figure below; The heaters 3a and 3c arranged above and below them are so-called sub-heaters which are smaller than the main heater in the heat treatment device forming the upper end portion and the lower end portion of the reaction tube 1, respectively. As a raw material of the heater 3, a carbon wire formed by arranging a plurality of bundles of high-purity carbon fibers having a wire diameter of about 10 // m, for example, can be used and sealed in a ceramic, such as a transparent quartz tube with an outer diameter of several ten mm. . The heater 3 is not limited to this, and a metal body such as iron-molybdenum-carbon alloy may be used. _ The inner pipe 1a and the outer pipe 1b are supported on the cylindrical manifold 23 on the lower side, and the manifold 23 is provided with a gas supply pipe 24 so that a supply opening can be opened in a lower area inside the inner pipe 1a, and An exhaust pipe 25 connected to one end side is connected to the exhaust pipe between the inner pipe 1a and the outer pipe 1b as in a vacuum pump (not shown). In this example, the inner tube 1a, the outer tube 1b, and the manifold 23 constitute a reaction container. The employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed a cover 11 to form a lower opening that can plug the manifold 23. 11 is provided on the boat lift 12. The cover body 11 is provided with a heat insulation unit 13 and is connected to a driving part 14 provided in the boat elevator 12 to pass through a rotation shaft 15 provided inside the heat insulation unit 13 and rotate freely by the rotation shaft 15 The wafer boat 16 forming the substrate holder at the lower end of the holder. The wafer boat 16 has a structure in which a wafer W capable of holding a large number of substrates is formed in a shelf shape, and the heat-retaining unit 13 has a structure in which a heat-insulating unit 13a such as a combined quartz tab and a heat-generating unit 13b are formed. A thin quartz tube 40 for a thermocouple is provided in the inner tube 11a. In the quartz tube 40, if each heater 3 (3a, 3b, 3) which is divided into three sections is detected, this paper size applies Chinese national standards ( CNS) A4 specification (210X 297 mm) -10- 564504 A7 B7 V. Description of the invention (8) (Please read the precautions on the back before filling this page) c) The temperature of the area Z !, z2, z3 In the ground, three internal thermocouples (second temperature detecting sections) 4 (4a, 4b, 4c) of the internal temperature detecting section are provided in each of the zones Z1 to Z3. In addition, in the vicinity of the heater 3 (3a, 3b, 3c), an external thermocouple is provided in each of the zones Z: to Z3 to detect the temperature of the heater 3 (3a, 3b, 3c). (First temperature detection section) 5 (5a, 5b, 5c). The heaters 3 (3a, 3b, 3c) corresponding to the zones Z! To Z3 of each segment are provided with a power supply unit 20 (20a, 20b, 20c) that supplies power, and controls each of the power supply units 20 (20a, 20a, 20b, 20c) is a control unit 6, 7, 8 required to control the amount of heat generated by each heater 3 (3a, 3b, 3c) by supplying power. The details are as follows. Here, the wiring configuration of the relevant parts is briefly described; the internal thermocouple 4 (4a, 4b, 4c) and the external thermocouple 5 (5a, 5b, 5c) and each corresponding zone Z! ~ Z3 Any one of the control sections 6, 7, 8 is connected, and the signal line extended in the external thermocouple 5b provided in the middle section of the heater 3b is connected to the control section 7 and the control section on the way. Department 6,8. The top heater 31 provided on the top of the heat insulator 21 is also provided with a thermocouple 32 in the same manner as the heater 3 (3a, 3b, 3c), and the heater is controlled from the control unit 33 via the power supply unit 34. The power supply quantity of 1 is made to be able to adjust the heat generation. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the heater 3 (3a, 3b, 30) and the control units 6, 7, 8 connected to the heater. The reason for the wiring structure as described above is to make it switchable. When the heater 3 is controlled in each of the zones Zi to Z3 in each section, and the temperature of the external thermocouple 5b corresponding to the heater 3b formed on the main heater is used in other parts, and the heater 3a 3c performs so-called follow-up control. The structure of the control system of the heater 3 forming the main part of this embodiment will be described below with reference to FIG. 2. This paper size is in accordance with the Chinese National Standard (CNS) A4 standard (21〇). X297 mm) -11-564504 A7 _____B7 V. Description of the invention (9) (Please read the precautions on the back before filling out this page) First, the control section 6.8 must use two calculation methods as described above. Therefore, the control section 6 is provided with a first calculation unit 61 and a second calculation unit 62; control unit 8 is provided with a first calculation unit 81 and a second calculation unit 82. The control unit 7 without having to switch the calculation direction has only a second calculation unit 72 (71 Is lacking in convenience That is, the first calculation units 61 and 81 of the control units 6 and 8 are the control units 6 and 8 that perform calculations following the control unit 7 (accurately, the temperature detection 値 obtained by following the control area 7 of the control unit 7). It is used by the user. Therefore, the signal line extending from the external thermocouple 5b is connected to the first computing unit 61 in the control unit 6 and the first computing unit 81 in the control unit 8. The staff of the Intellectual Property Bureau of the Ministry of Economic Affairs consumes Cooperative society printing On the other hand, the second computing units 62, 72, 82 are based on the internal thermocouples 4 (4a, 4b, 4c) and the external thermocouples 5 (5a, 5b, 5c) The temperature detection 値 obtained and the temperature targets 设定 set in each of these areas Z! ~ Z3 are used exclusively for calculation, so internal thermoelectricity is connected to the second calculation unit 62 (72, 82). Even 4a (4b, 4c), external thermocouple 5a (5b, 5c) and target 値 output section 63 (7 3, 83). The first calculation section 61, 81 or the second calculation section 62, 72, 8 2 The output calculation result is a configuration that is output as a control signal to the power supply unit 20 (20a, 20b, 20c). The control unit 6 (8) is configured by switching The unit 64 (84) can optionally use either the first arithmetic unit 61 (81) or the second arithmetic unit 62 (82). The structure of the first arithmetic units 61 and 81 will be described here, but these have the same structure. For this reason, the first calculation unit 81 is taken as an example and described with reference to FIG. 3. In the third figure, the element symbol 8 11 is a comparison operation unit, and the element symbol 812 is a correction unit output unit. In the comparison operation unit 811, The temperature detection of the external thermocouple 5b located in the middle zone Z2 (as a temperature target), this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -12- 564504 A7 ___B7_ V. Description of the invention (1〇) (Please read the precautions on the back before filling this page.) For this temperature target, add the correction value output from the correction value output section 8 1 2 and subtract the temperature detection of the external thermocouple 5c located in the lower zone Z3. value. The above-mentioned correction 値 is a so-called static correction element required for correcting a difference in target temperature during processing of the middle region Z2 and the lower region Z3. Specifically, the correction 値 is obtained as the phase difference between the temperature target 双方 of both sides output by the target 値 output units 73 and 83 used by the second calculation units 72 and 82 as described below. Staff of the Intellectual Property Bureau of the Ministry of Economic Affairs The consumer cooperative is printed on the output side of the comparison operation unit 811 and is provided with a multiplication unit 813 that multiplies the output 値 (deviation component) ql by a predetermined constant k. As described above, the lower zone Z3 corresponding to the control unit 8 is the opening portion closest to the lower side of the reaction tube 1a, and is easily affected by the cold air flowing in and out of the wafer boat 16. Therefore, the lower zone Z3 corresponds to the middle zone. Z2 has more heating output than heating. Taking this into consideration, in order to reflect the increase component of the output from the comparison operation unit 8 1 1 to the output 値 in the multiplication unit 8 1 3, a so-called dynamic correction is performed on the output 値 ql by multiplying by a constant constant k. In the multiplication unit 813, the constant k 値 is used as 1.2 (in the first calculation unit 61 corresponding to the upper region Z !, which has a small influence of the cold air, it is 0.8, for example). With respect to this output 値, various calculations (PID operations) of the integral element II, the proportional element P1, and the differential element D1 are performed, and the output 値 B1 required to supply power corresponding to the above-mentioned deviation component q1 is output via the mixing unit 814. The structure of the second calculation unit 62, 7 2, 82 will be described below, but the same structure as in the case of the first calculation unit described above is used. Therefore, the second calculation unit 82 is taken as an example while referring to FIG. 4. Explain. The second calculation unit 82 is to assemble the temperature detection of the internal thermocouple 4c in the large loop, and assemble the temperature detection of the external thermocouple 5c in the small loop. The paper standard applies Chinese National Standard (CNS) A4 Specifications (210X297 mm) -13- 564504 A7 B7 V. Cascade control of the invention description (n) to get the control signal B2; Element symbols 821 ~ 824 indicate the comparison operation unit, II indicates the integral element, and P2 indicates the Proportional elements, (Please read the notes on the back before filling in this page} D2 indicates the integral requirement. The control unit 6 described above is actually composed of a CPU, a ROM that stores programs, and a memory that records temperature settings. It is also performed in software by each calculation program, but in this embodiment, it is also possible to perform these calculations with a hardware configuration. It is also switched from the first operation unit 8 1 (61) of the switch unit 84 (64). The timing to the second calculation unit 82 (62) is, for example, after the wafer boat 16 is moved into the wafer vessel 16 to make the temperature in the reaction vessel be set to a constant temperature, or after the wafer boat 16 is moved into the wafer boat 16 and a predetermined time elapses, or Opposite switching timing as in After processing, the temperature in the reaction container is lowered to a predetermined temperature, etc. The effect of the above-mentioned embodiment will be described below. The heating and printing of the wafer W by the consumer cooperative of the Intellectual Property Office of the Ministry of Economic Affairs is performed by the reaction device. It is performed by the heater 3 on the side of the tube 1 and the top heater 31 provided on the upper side. The main part of this embodiment is the control method of dividing the heater 3 (3a, 3b, 3c) provided. Therefore, while focusing on this method, it will also be described with reference to FIG. 5. First, the wafer boat 16 on which the wafers of the substrate are mounted in a rack shape is raised at the timing t1 of FIG. Began to be moved into the reaction vessel (reaction tube 1 and manifold 23). At this time, the reaction tube 1 has been heated to a predetermined temperature of, for example, 600 ° C, and is controlled in the areas corresponding to the upper and lower sections Z !, Z3 As described above, the first computing units 61 and 81 are selected by the switching units 64 and 84 as the temperature control of the middle zone Z2 as described above. First, when the upper end of the wafer boat 16 is opened into the reaction container, , Crystal Paper Size Applies to Chinese National Standards (CNS) A4 specifications (210X297 mm) -14- 564504 A7 _B7_ V. Description of the invention (12) (Please read the precautions on the back before filling this page) The round boat 16 and wafer W are still in the reaction container before Because of the outside, it is colder. For this reason, the temperature of the lower zone 1 of the reaction vessel in the range of the sub heater 3c will become low. The temperature of the middle zone Z2 of the range of the main heater 3b is also relatively low. The influence of the cold wafer boat 16 will become lower, but the temperature drop in the middle section Z2 is smaller than that in the lower section Z3. Then, when the wafer boat 16 reaches the middle section Z2, the The temperature also decreased. At this time, the wafer boat 16 and the wafer W are gradually warmed up as the reaction vessel rises. Therefore, the middle zone Z2 becomes lower than the temperature before the wafer boat 16 is moved in, but it will not be higher than The lower zone Z3 is low. This is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. When the wafer boat 16 is moved into the reaction container, the lower zone Z3 is cooled most, the middle zone Z2 is also cooled, and the upper zone 2 is slightly cooled. . In the control unit 8 corresponding to the lower zone Z3, the temperature of the external thermocouple 5c becomes low, so it is intended to increase the power supply to the sub heater 3c sharply. However, the temperature detection in the middle zone Z2 of the temperature target 値 also As a result, the increase in the power supply to the sub heater 3c is slightly suppressed in accordance with the decrease. Thereafter, the temperature of the sub-heater 3c in the lower stage becomes higher as the temperature detection temperature R in the middle zone Z2 increases. Then, in the middle region Z2, the temperature of the external thermocouple 5b exceeds the temperature target 値 and becomes an over-adjusted state, and thereafter, the temperature of the external thermocouple 5b decreases toward the temperature target 値. The operation following this temperature in the middle zone Z2 controls the power supply to the sub heater 3c in the lower zone Z3. The temperature of the sub heater 3c matches the temperature of the sub heater 3b in the middle zone Z2.値 at temperature target. In the upper zone Z !, the sub heating zone 3a also follows the temperature action of the main heater 3b in the middle zone Z2, and the power supply is controlled. In accordance with this paper standard, the Chinese National Standard (CNS) A4 specification (210X 297) is applied. (Mm) '-15- 564504 A7 _B7_ V. Description of the invention (13) (Please read the notes on the back before filling this page) The temperature of the main heating couple 3b in the middle area z2 is bundled at the temperature target value. The temperature at which the auxiliary heater 3c (3a) converges is calculated as shown in Fig. 3, and the temperature is detected in the middle zone Z2. If the temperature target of the lower zone Z3 is higher than the middle zone Z2 by 10 ° C, the temperature of the sub heater 3c in the lower zone Z3 is about 1 (the number of TC) higher than the temperature of the main heater 3b. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the t2 and completed the transfer into the wafer boat 16, and at t3, if the temperature in each area of the reaction vessel was stable, the control units 6, 8 are from the first operation unit 61. , 81 is switched to the second calculation units 62 and 82 to control the power of the heaters 3a and 3c. Thereafter, the temperature is raised from the time t3, and after heating to a predetermined processing temperature, at time t4 (more specifically, each area is stabilized) After the processing temperature), heat treatment is performed on the wafer W. As an example of this heat treatment, the inside of the reaction vessel is maintained at about 800t, and a predetermined film-forming gas is supplied from the gas supply pipe 23 into the reaction vessel, and from the exhaust gas Tube 25 is evacuated and evacuated The film formation process is performed on the wafer W while maintaining the predetermined vacuum degree. The switching from the first calculation unit 61, 81 to the second calculation unit 62, 82 may be performed while the temperature is being raised to 1 or when the processing temperature is settled. At a timing of t5, when a certain film is formed on the surface of the wafer W, for example, after the temperature is lowered to about 600t when carrying in, for example, at a timing of t6, the wafer boat 16 is carried out in the reverse order from that at the time of carrying in As described above, according to the above embodiment, in the temperature control of the heaters 3 (3a, 3b, 3c) provided in the plurality of divisions, the control sections 6, 8 responsible for heating control of the upper and lower sections Z !, Z3 are When the wafer W is carried in, the temperature detection 値 in the middle zone Z2 is taken as the temperature target, and according to the temperature target, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -16- 564504 A7 _B7_ 5 、 Explanation of the invention (14) (Please read the precautions on the back before filling in this page) and temperature control with the temperature detection zone! Of the zone Z !, z3. Therefore, the temperature of each zone Z! ~ Z3 quickly settles to the temperature target値. For example, for the next paragraph The temperature near the sub-heater 3c in the zone Z! Is lowered by being carried into the wafer boat 16. However, the temperature near the main heater 3b in the middle zone Z2 of the temperature target 値 also decreases, so the temperature target 値 and temperature detection 値The deviation component becomes smaller, and the increase in the amount of heat generated by the sub heater 3c can be moderately suppressed. Moreover, the temperature near the sub heater 3c is over-adjusted to exceed the temperature target 値, and now it is desired to reduce the amount of heat generated by the sub heater 3c. (The temperature becomes lower.) However, since the heating value of 1 of the sub heater 3c follows the temperature near the main heater 3b, the temperature can be lowered gently as compared with the case where the temperature target 値 becomes constant. As a result, it is possible to rapidly and softly land on the temperature target 抑制 while suppressing vibrations above and below the temperature. Also, redundant for the upper area! Since the temperature near the sub heater 3a also follows the temperature near the main heater 3b, the temperature setting is quickly settled at the temperature target 値. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, when the lower wafer boat 16 and the wafer W are moved into the reaction container, the temperature of each zone Z! ~ Z3 varies from the wafer boat 16 and the wafer W To the extent affected, the follow-up ratio of the control unit 7 to the middle zone Z2 is assembled in the first operation units 61 and 81 of the control units 6 and 8. For example, in the above example, the upper region Z! Is affected less than the middle region Z2, and the lower region Z3 is affected more than the middle region L. Therefore, the follow-up ratio of the control unit 6 in the lower zone Z! Is set to 0.8, and the follow-up ratio of the control unit 8 in the lower zone Z3 is set to 1.2. Figure 6 shows the change in the temperature detection of the external thermocouple 5b in the middle zone Z2, and the follow-up ratio is changed to 5%, 30%, and 100%. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). ) -17- 564504 A7 __B7_ V. Description of the invention (15) (Please read the precautions on the back before filling out this page) Each temperature detector in the upper zone Z! Can be seen from the figure, the outside of the upper zone Z! The change width of the temperature detection 値 of the thermocouple 5a is increased when the following ratio becomes larger, and decreased when the following ratio becomes smaller. Therefore, as in the above embodiment, the follow-up ratio of the temperature control of the sub heaters 3a, 3c to the main heater 3b is adjusted. In the upper zone Z! And the lower zone 1, temperature control of the temperature distribution in the reaction container when the wafer boat 16 is carried in can be performed, so that the temperature in each zone can be quickly settled at the target temperature. In addition, since the temperature stabilization time of each region after the wafer boat 16 is carried in greatly affects the throughput, the throughput can be increased in this embodiment. FIG. 7 shows the temperatures near the sub-heating appliances 3a, the main heating appliances 3b, and the sub-heaters 3c in the vertical heat treatment apparatus shown in FIG. 1 before the wafer boat 16 is carried into the reaction vessel. The simulation results were obtained by time-dependent changes in the temperature near each of the heating appliances 3a to 3c when the wafer boat 16 was carried in from the states settled at 5 75 ° C, 573 ° C, and 560 ° C. It takes about 13 minutes from the time when the wafer boat 16 is input until the temperature near each of the heaters 3a to 3c becomes stable. It can be seen that when the wafer W is inserted into the wafer W, the temperature in each area becomes stable in a short time. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In the description of the first calculation unit 61, 81, the calculation method for calculating the follow-up ratio of each of the upper and lower zones Z! To Z3 and the middle zone is described. The method of multiplying the coefficient k determined in advance, but when the wafer boat 16 is raised, k may be changed in accordance with the position of the wafer boat 16. Moreover, in this embodiment, when the wafer W is carried in, the temperature detection coils corresponding to the internal thermocouples 4a to 4c of the respective control sections 6, 7, 8 are taken in, and in the control sections 6, 8 the middle section Z2 The temperature detection of the internal thermocouple 4b (as a temperature target), this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -18- 564504 A7 _______B7_ V. Description of the invention (16) (Please read first Note on the back page, please fill in this page again.) Compared with the temperature detection of the internal thermocouples 4a and 4c, the temperature of the sub heaters 3a and 3c is controlled with the deviation component. The main heater 3b may be controlled by the deviation component of the target 値 and the temperature detection 値 of the internal thermocouple 4b. Further, in the present embodiment, it is possible to perform the follow-up control using the temperature detection 对应 corresponding to the middle zone 1 as the temperature target 对于 only for the sub heater in the lower zone Z3. As described above, according to the present invention, when substrate processing is performed in a thermal processing environment divided into a plurality of regions, the temperature of each region can be quickly stabilized, and the throughput can be increased. Brief Description of the Drawings Fig. 1 is a longitudinal sectional view showing an embodiment of a heat treatment apparatus of the present invention. Fig. 2 is a block diagram showing a control unit and related units used in this embodiment. Fig. 3 is a block diagram showing the internal configuration of a first arithmetic unit provided in the control unit. Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 4 is a block diagram showing the internal structure of the second computing unit provided in the control unit. Fig. 5 is an operation explanatory diagram showing the relationship between the change in temperature over time and the computing unit used in the present embodiment. Fig. 6 is an operation explanatory diagram showing the functions necessary for carrying out and explaining the operation of the first calculation unit. Figure 7 shows the paper's dimensions showing the temperature change of each external thermocouple during the wafer boat. This paper applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -19- 564504 A7 B7 V. Description of the invention (17) Characteristic diagram. Fig. 8 is a vertical cross-sectional view showing the overall structure of a conventional heat treatment apparatus (please read the precautions on the back before filling this page). Comparison of main components 1 Reaction tube 3 Heater 4 Internal thermocouple 5 External thermocouple 6, 7, 8 Control section 11 Cover 12 Wafer elevator 13 Insulation unit 14 Drive section 15 Rotary shaft 16 Wafer boat 20, 34 Power supply section 21 Insulator 22 Base body 23 Manifold 24 Gas supply pipe 25 Exhaust pipe 31 Top heater 32 Thermocouples Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumption Cooperatives Printed on this paper Applicable to China National Standard (CNS) A4 Specification (210X297 (Mm) -20- 564504 A7 B7 V. Description of the invention (18) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumer Cooperatives 33 Control section 61, 81 First operation section 62, 72, 82 Second operation section 73, 83 Objective 値Output section 64, 84 Switching section 101 Reaction vessel 102 Opening section 103 Wafer boat 104 Cover 200 Heater 201, 203 Sub heater 300 ~ 303 Internal thermocouple 400 ~ 403 External thermocouple 500 ~ 503 Control section 811 Comparison calculation section 812 Correction output section 813 Multiplication section 814 Mixing section 821 ~ 824 Comparison calculation section W wafer (Please read the precautions on the back before filling this page) • Dancing clothes ·, and the size of the paper is applicable to China National Standard (CNS) A4 (210X297 mm) -21-