JP4413556B2 - 成膜方法、半導体装置の製造方法 - Google Patents

成膜方法、半導体装置の製造方法 Download PDF

Info

Publication number
JP4413556B2
JP4413556B2 JP2003293904A JP2003293904A JP4413556B2 JP 4413556 B2 JP4413556 B2 JP 4413556B2 JP 2003293904 A JP2003293904 A JP 2003293904A JP 2003293904 A JP2003293904 A JP 2003293904A JP 4413556 B2 JP4413556 B2 JP 4413556B2
Authority
JP
Japan
Prior art keywords
film
added carbon
carbon film
plasma
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003293904A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005064302A5 (https=
JP2005064302A (ja
Inventor
康浩 寺井
明 浅野
賢一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2003293904A priority Critical patent/JP4413556B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to EP04747870A priority patent/EP1655771B1/en
Priority to CNB2004800233557A priority patent/CN100514574C/zh
Priority to PCT/JP2004/010484 priority patent/WO2005017990A1/ja
Priority to US10/567,733 priority patent/US7875549B2/en
Priority to EP10187082A priority patent/EP2284875A3/en
Priority to KR1020067003057A priority patent/KR100782673B1/ko
Priority to TW093124395A priority patent/TW200518221A/zh
Publication of JP2005064302A publication Critical patent/JP2005064302A/ja
Publication of JP2005064302A5 publication Critical patent/JP2005064302A5/ja
Application granted granted Critical
Publication of JP4413556B2 publication Critical patent/JP4413556B2/ja
Priority to US12/858,162 priority patent/US8119518B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
JP2003293904A 2003-08-15 2003-08-15 成膜方法、半導体装置の製造方法 Expired - Fee Related JP4413556B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003293904A JP4413556B2 (ja) 2003-08-15 2003-08-15 成膜方法、半導体装置の製造方法
CNB2004800233557A CN100514574C (zh) 2003-08-15 2004-07-23 成膜方法、半导体装置的制造方法、半导体装置、基板处理系统
PCT/JP2004/010484 WO2005017990A1 (ja) 2003-08-15 2004-07-23 成膜方法、半導体装置の製造方法、半導体装置、基板処理システム
US10/567,733 US7875549B2 (en) 2003-08-15 2004-07-23 Fluorine doped carbon films produced by modification by radicals
EP10187082A EP2284875A3 (en) 2003-08-15 2004-07-23 Film forming method, fabrication method of semiconductor device, semiconductor device, and substrate processing system
KR1020067003057A KR100782673B1 (ko) 2003-08-15 2004-07-23 성막 방법 및 반도체 장치의 제조 방법
EP04747870A EP1655771B1 (en) 2003-08-15 2004-07-23 Method for forming film, method for manufacturing semiconductor device, semiconductor device and substrate treatment system
TW093124395A TW200518221A (en) 2003-08-15 2004-08-13 Method for forming film, method for manufacturing semiconductor device, semiconductor device and substrate treatment system
US12/858,162 US8119518B2 (en) 2003-08-15 2010-08-17 Noble metal barrier for fluorine-doped carbon films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003293904A JP4413556B2 (ja) 2003-08-15 2003-08-15 成膜方法、半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009176043A Division JP2009295992A (ja) 2009-07-29 2009-07-29 半導体装置の製造方法、半導体装置

Publications (3)

Publication Number Publication Date
JP2005064302A JP2005064302A (ja) 2005-03-10
JP2005064302A5 JP2005064302A5 (https=) 2006-09-21
JP4413556B2 true JP4413556B2 (ja) 2010-02-10

Family

ID=34191011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003293904A Expired - Fee Related JP4413556B2 (ja) 2003-08-15 2003-08-15 成膜方法、半導体装置の製造方法

Country Status (7)

Country Link
US (2) US7875549B2 (https=)
EP (2) EP1655771B1 (https=)
JP (1) JP4413556B2 (https=)
KR (1) KR100782673B1 (https=)
CN (1) CN100514574C (https=)
TW (1) TW200518221A (https=)
WO (1) WO2005017990A1 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100887449B1 (ko) * 2003-09-17 2009-03-10 도쿄엘렉트론가부시키가이샤 저유전율 절연막의 형성 방법, 플라즈마 처리 장치, 및기록 매체
JP4555143B2 (ja) * 2004-05-11 2010-09-29 東京エレクトロン株式会社 基板の処理方法
JP2006135303A (ja) * 2004-10-05 2006-05-25 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置、並びにプラズマ成膜装置に用いられる記憶媒体
JP5194393B2 (ja) * 2006-06-23 2013-05-08 東京エレクトロン株式会社 半導体装置の製造方法
US7964496B2 (en) * 2006-11-21 2011-06-21 Taiwan Semiconductor Manufacturing Company, Ltd. Schemes for forming barrier layers for copper in interconnect structures
JP5261964B2 (ja) * 2007-04-10 2013-08-14 東京エレクトロン株式会社 半導体装置の製造方法
US8197913B2 (en) * 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
JP2009111251A (ja) * 2007-10-31 2009-05-21 Tohoku Univ 半導体装置およびその製造方法
US20110081500A1 (en) * 2009-10-06 2011-04-07 Tokyo Electron Limited Method of providing stable and adhesive interface between fluorine-based low-k material and metal barrier layer
JP5700513B2 (ja) * 2010-10-08 2015-04-15 国立大学法人東北大学 半導体装置の製造方法および半導体装置
JP2012216633A (ja) * 2011-03-31 2012-11-08 Tokyo Electron Ltd プラズマ窒化処理方法、プラズマ窒化処理装置および半導体装置の製造方法
JP5364765B2 (ja) * 2011-09-07 2013-12-11 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
TWI587396B (zh) * 2012-02-22 2017-06-11 日本泉瑞股份有限公司 Semiconductor device manufacturing method and semiconductor device
JP6045975B2 (ja) 2012-07-09 2016-12-14 東京エレクトロン株式会社 カーボン膜の成膜方法および成膜装置
JP2014036148A (ja) * 2012-08-09 2014-02-24 Tokyo Electron Ltd 多層膜をエッチングする方法、及びプラズマ処理装置
US20150118416A1 (en) * 2013-10-31 2015-04-30 Semes Co., Ltd. Substrate treating apparatus and method
JP6457101B2 (ja) 2015-09-17 2019-01-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN108751123B (zh) * 2018-05-21 2022-05-20 赛莱克斯微系统科技（北京）有限公司 一种接触窗的形成方法
CN111686766B (zh) * 2019-03-11 2021-09-21 中国科学院福建物质结构研究所 一种金属-氟掺杂碳复合材料及其制备方法和在电催化固氮中的应用
JP6960953B2 (ja) * 2019-03-20 2021-11-05 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748864B2 (ja) 1994-09-12 1998-05-13 日本電気株式会社 半導体装置及びその製造方法及び非晶質炭素膜の製造方法及びプラズマｃｖｄ装置
JP3666106B2 (ja) 1996-02-29 2005-06-29 ソニー株式会社 半導体装置の製造方法
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
JP3400918B2 (ja) 1996-11-14 2003-04-28 東京エレクトロン株式会社 半導体装置の製造方法
JP3402972B2 (ja) 1996-11-14 2003-05-06 東京エレクトロン株式会社 半導体装置の製造方法
JP3429171B2 (ja) 1997-11-20 2003-07-22 東京エレクトロン株式会社 プラズマ処理方法及び半導体デバイスの製造方法
US6107192A (en) * 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
EP0933814A1 (en) * 1998-01-28 1999-08-04 Interuniversitair Micro-Elektronica Centrum Vzw A metallization structure on a fluorine-containing dielectric and a method for fabrication thereof
JP4355039B2 (ja) 1998-05-07 2009-10-28 東京エレクトロン株式会社 半導体装置及び半導体装置の製造方法
SE512274C2 (sv) 1998-05-13 2000-02-21 Volvo Wheel Loaders Ab Bromsanordning och ett bromsmanöverorgan
DE60037395T2 (de) * 1999-03-09 2008-11-27 Tokyo Electron Ltd. Herstellung eines halbleiter-bauelementes
US6740580B1 (en) * 1999-09-03 2004-05-25 Chartered Semiconductor Manufacturing Ltd. Method to form copper interconnects by adding an aluminum layer to the copper diffusion barrier
US20010042513A1 (en) * 1999-10-13 2001-11-22 Chien-Teh Kao Apparatus for improved remote microwave plasma source for use with substrate processing systems
JP2001135631A (ja) 1999-11-10 2001-05-18 Matsushita Electronics Industry Corp 半導体装置及びその製造方法
US6284657B1 (en) * 2000-02-25 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Non-metallic barrier formation for copper damascene type interconnects
US6818990B2 (en) * 2000-04-03 2004-11-16 Rensselaer Polytechnic Institute Fluorine diffusion barriers for fluorinated dielectrics in integrated circuits
JP4366856B2 (ja) * 2000-10-23 2009-11-18 東京エレクトロン株式会社 プラズマ処理装置
US6518193B1 (en) * 2001-03-09 2003-02-11 Lsi Logic Corporation Substrate processing system
US6972223B2 (en) * 2001-03-15 2005-12-06 Micron Technology, Inc. Use of atomic oxygen process for improved barrier layer
JP4727057B2 (ja) 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
JP2002329682A (ja) * 2001-04-27 2002-11-15 Anelva Corp Ｃｕ薄膜作製方法
JP3648480B2 (ja) * 2001-12-26 2005-05-18 株式会社東芝 半導体装置およびその製造方法
US20040161946A1 (en) * 2002-06-24 2004-08-19 Hsin-Yi Tsai Method for fluorocarbon film depositing

Also Published As

Publication number Publication date
TWI373073B (https=) 2012-09-21
EP1655771B1 (en) 2012-10-17
CN100514574C (zh) 2009-07-15
US7875549B2 (en) 2011-01-25
CN1836317A (zh) 2006-09-20
KR20060038469A (ko) 2006-05-03
WO2005017990A1 (ja) 2005-02-24
EP1655771A4 (en) 2008-02-27
EP2284875A3 (en) 2011-08-31
US20060223306A1 (en) 2006-10-05
TW200518221A (en) 2005-06-01
US20100317188A1 (en) 2010-12-16
EP2284875A2 (en) 2011-02-16
US8119518B2 (en) 2012-02-21
JP2005064302A (ja) 2005-03-10
KR100782673B1 (ko) 2007-12-07
EP1655771A1 (en) 2006-05-10

Similar Documents

Publication Publication Date Title
JP4413556B2 (ja) 成膜方法、半導体装置の製造方法
US7803705B2 (en) Manufacturing method of semiconductor device and film deposition system
US7807579B2 (en) Hydrogen ashing enhanced with water vapor and diluent gas
US8383519B2 (en) Etching method and recording medium
JP4813755B2 (ja) 有機反射防止膜をプラズマエッチングする方法
JP4256763B2 (ja) プラズマ処理方法及びプラズマ処理装置
CN101448580B (zh) 具有室去氟化和晶片去氟化中间步骤的等离子体蚀刻和光刻胶剥离工艺
CN100499030C (zh) 半导体基板导电层表面的净化方法
JP5204229B2 (ja) 半導体等の成膜方法
JP4209253B2 (ja) フッ素添加カーボン膜の形成方法
TWI362703B (https=)
KR102678853B1 (ko) 피처리체를 처리하는 방법
US20050269294A1 (en) Etching method
KR100780199B1 (ko) 반도체 장치 및 그 제조 방법
JP2009295992A (ja) 半導体装置の製造方法、半導体装置
US8691709B2 (en) Method of forming metal carbide barrier layers for fluorocarbon films
KR100733440B1 (ko) 불소 첨가 카본막의 형성 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060809

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060809

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090623

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090729

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091021

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20091117

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20091118

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121127

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151127

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees