JP4402202B2 - 反射型半導体表示装置 - Google Patents

反射型半導体表示装置 Download PDF

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Publication number
JP4402202B2
JP4402202B2 JP18270499A JP18270499A JP4402202B2 JP 4402202 B2 JP4402202 B2 JP 4402202B2 JP 18270499 A JP18270499 A JP 18270499A JP 18270499 A JP18270499 A JP 18270499A JP 4402202 B2 JP4402202 B2 JP 4402202B2
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Japan
Prior art keywords
tft
display device
conductive layer
channel
electrode
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Expired - Fee Related
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JP18270499A
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English (en)
Japanese (ja)
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JP2001013525A (ja
JP2001013525A5 (enExample
Inventor
舜平 山崎
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP18270499A priority Critical patent/JP4402202B2/ja
Publication of JP2001013525A publication Critical patent/JP2001013525A/ja
Publication of JP2001013525A5 publication Critical patent/JP2001013525A5/ja
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Publication of JP4402202B2 publication Critical patent/JP4402202B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP18270499A 1999-06-29 1999-06-29 反射型半導体表示装置 Expired - Fee Related JP4402202B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18270499A JP4402202B2 (ja) 1999-06-29 1999-06-29 反射型半導体表示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18270499A JP4402202B2 (ja) 1999-06-29 1999-06-29 反射型半導体表示装置

Publications (3)

Publication Number Publication Date
JP2001013525A JP2001013525A (ja) 2001-01-19
JP2001013525A5 JP2001013525A5 (enExample) 2006-08-17
JP4402202B2 true JP4402202B2 (ja) 2010-01-20

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ID=16122987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18270499A Expired - Fee Related JP4402202B2 (ja) 1999-06-29 1999-06-29 反射型半導体表示装置

Country Status (1)

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JP (1) JP4402202B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4693257B2 (ja) * 2001-02-21 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
SG179310A1 (en) 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
CN1245703C (zh) * 2001-12-11 2006-03-15 精工爱普生株式会社 显示装置及其电子机器
JP4314820B2 (ja) * 2001-12-11 2009-08-19 セイコーエプソン株式会社 表示装置及び電子機器
WO2011080957A1 (ja) * 2009-12-29 2011-07-07 シャープ株式会社 薄膜トランジスタ、その製造方法、および表示装置
US11423844B2 (en) 2018-05-17 2022-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP7520690B2 (ja) * 2020-10-26 2024-07-23 株式会社ジャパンディスプレイ 表示装置

Also Published As

Publication number Publication date
JP2001013525A (ja) 2001-01-19

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