JP2001013525A5 - - Google Patents
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- Publication number
- JP2001013525A5 JP2001013525A5 JP1999182704A JP18270499A JP2001013525A5 JP 2001013525 A5 JP2001013525 A5 JP 2001013525A5 JP 1999182704 A JP1999182704 A JP 1999182704A JP 18270499 A JP18270499 A JP 18270499A JP 2001013525 A5 JP2001013525 A5 JP 2001013525A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- tft
- electrode
- display device
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 229910052715 tantalum Inorganic materials 0.000 description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18270499A JP4402202B2 (ja) | 1999-06-29 | 1999-06-29 | 反射型半導体表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18270499A JP4402202B2 (ja) | 1999-06-29 | 1999-06-29 | 反射型半導体表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001013525A JP2001013525A (ja) | 2001-01-19 |
| JP2001013525A5 true JP2001013525A5 (enExample) | 2006-08-17 |
| JP4402202B2 JP4402202B2 (ja) | 2010-01-20 |
Family
ID=16122987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18270499A Expired - Fee Related JP4402202B2 (ja) | 1999-06-29 | 1999-06-29 | 反射型半導体表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4402202B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4693257B2 (ja) * | 2001-02-21 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| SG179310A1 (en) | 2001-02-28 | 2012-04-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| CN1245703C (zh) * | 2001-12-11 | 2006-03-15 | 精工爱普生株式会社 | 显示装置及其电子机器 |
| JP4314820B2 (ja) * | 2001-12-11 | 2009-08-19 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
| WO2011080957A1 (ja) * | 2009-12-29 | 2011-07-07 | シャープ株式会社 | 薄膜トランジスタ、その製造方法、および表示装置 |
| US11423844B2 (en) | 2018-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| JP7520690B2 (ja) * | 2020-10-26 | 2024-07-23 | 株式会社ジャパンディスプレイ | 表示装置 |
-
1999
- 1999-06-29 JP JP18270499A patent/JP4402202B2/ja not_active Expired - Fee Related
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