JP2001013524A5 - - Google Patents
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- Publication number
- JP2001013524A5 JP2001013524A5 JP1999182697A JP18269799A JP2001013524A5 JP 2001013524 A5 JP2001013524 A5 JP 2001013524A5 JP 1999182697 A JP1999182697 A JP 1999182697A JP 18269799 A JP18269799 A JP 18269799A JP 2001013524 A5 JP2001013524 A5 JP 2001013524A5
- Authority
- JP
- Japan
- Prior art keywords
- tft
- electrode
- display device
- pixel
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18269799A JP4397463B2 (ja) | 1999-06-29 | 1999-06-29 | 反射型半導体表示装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18269799A JP4397463B2 (ja) | 1999-06-29 | 1999-06-29 | 反射型半導体表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001013524A JP2001013524A (ja) | 2001-01-19 |
| JP2001013524A5 true JP2001013524A5 (enExample) | 2006-08-17 |
| JP4397463B2 JP4397463B2 (ja) | 2010-01-13 |
Family
ID=16122862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18269799A Expired - Fee Related JP4397463B2 (ja) | 1999-06-29 | 1999-06-29 | 反射型半導体表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4397463B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6580475B2 (en) * | 2000-04-27 | 2003-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4634673B2 (ja) * | 2001-09-26 | 2011-02-16 | シャープ株式会社 | 液晶表示装置及びその製造方法 |
| CN1245703C (zh) * | 2001-12-11 | 2006-03-15 | 精工爱普生株式会社 | 显示装置及其电子机器 |
| JP4314820B2 (ja) * | 2001-12-11 | 2009-08-19 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
| JP4123832B2 (ja) * | 2002-05-31 | 2008-07-23 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
| JP4537029B2 (ja) | 2003-09-30 | 2010-09-01 | シャープ株式会社 | 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置 |
| US7410842B2 (en) * | 2005-04-19 | 2008-08-12 | Lg. Display Co., Ltd | Method for fabricating thin film transistor of liquid crystal display device |
| JP4845531B2 (ja) | 2006-02-28 | 2011-12-28 | 三菱電機株式会社 | 画像表示装置 |
| JP6702760B2 (ja) * | 2016-02-25 | 2020-06-03 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP6707416B2 (ja) * | 2016-07-29 | 2020-06-10 | 株式会社ジャパンディスプレイ | 表示装置 |
| KR102645930B1 (ko) * | 2016-09-29 | 2024-03-12 | 엘지디스플레이 주식회사 | 표시장치 |
| CN107342045A (zh) * | 2017-08-25 | 2017-11-10 | 武汉华星光电半导体显示技术有限公司 | Amoled显示面板及显示装置 |
| CN108598120A (zh) | 2018-04-27 | 2018-09-28 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示面板和显示装置 |
| JP2020012977A (ja) * | 2018-07-18 | 2020-01-23 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN113412511A (zh) * | 2019-02-22 | 2021-09-17 | 株式会社半导体能源研究所 | 眼镜式电子设备 |
-
1999
- 1999-06-29 JP JP18269799A patent/JP4397463B2/ja not_active Expired - Fee Related
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