JP4397463B2 - 反射型半導体表示装置 - Google Patents

反射型半導体表示装置 Download PDF

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Publication number
JP4397463B2
JP4397463B2 JP18269799A JP18269799A JP4397463B2 JP 4397463 B2 JP4397463 B2 JP 4397463B2 JP 18269799 A JP18269799 A JP 18269799A JP 18269799 A JP18269799 A JP 18269799A JP 4397463 B2 JP4397463 B2 JP 4397463B2
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Japan
Prior art keywords
tft
display device
channel
electrode
pixel
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Expired - Fee Related
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JP18269799A
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English (en)
Japanese (ja)
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JP2001013524A (ja
JP2001013524A5 (enExample
Inventor
舜平 山崎
潤 小山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP18269799A priority Critical patent/JP4397463B2/ja
Publication of JP2001013524A publication Critical patent/JP2001013524A/ja
Publication of JP2001013524A5 publication Critical patent/JP2001013524A5/ja
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Publication of JP4397463B2 publication Critical patent/JP4397463B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP18269799A 1999-06-29 1999-06-29 反射型半導体表示装置 Expired - Fee Related JP4397463B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18269799A JP4397463B2 (ja) 1999-06-29 1999-06-29 反射型半導体表示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18269799A JP4397463B2 (ja) 1999-06-29 1999-06-29 反射型半導体表示装置

Publications (3)

Publication Number Publication Date
JP2001013524A JP2001013524A (ja) 2001-01-19
JP2001013524A5 JP2001013524A5 (enExample) 2006-08-17
JP4397463B2 true JP4397463B2 (ja) 2010-01-13

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JP18269799A Expired - Fee Related JP4397463B2 (ja) 1999-06-29 1999-06-29 反射型半導体表示装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019205624A1 (zh) * 2018-04-27 2019-10-31 京东方科技集团股份有限公司 显示基板及其制造方法、显示面板和显示装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6580475B2 (en) * 2000-04-27 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
CN1245703C (zh) * 2001-12-11 2006-03-15 精工爱普生株式会社 显示装置及其电子机器
JP4314820B2 (ja) * 2001-12-11 2009-08-19 セイコーエプソン株式会社 表示装置及び電子機器
JP4123832B2 (ja) * 2002-05-31 2008-07-23 セイコーエプソン株式会社 電気光学装置及び電子機器
JP4537029B2 (ja) 2003-09-30 2010-09-01 シャープ株式会社 薄膜トランジスタ装置及びその製造方法、並びにそれを備えた薄膜トランジスタ基板及び表示装置
US7410842B2 (en) * 2005-04-19 2008-08-12 Lg. Display Co., Ltd Method for fabricating thin film transistor of liquid crystal display device
JP4845531B2 (ja) 2006-02-28 2011-12-28 三菱電機株式会社 画像表示装置
JP6702760B2 (ja) * 2016-02-25 2020-06-03 株式会社ジャパンディスプレイ 表示装置
JP6707416B2 (ja) * 2016-07-29 2020-06-10 株式会社ジャパンディスプレイ 表示装置
KR102645930B1 (ko) * 2016-09-29 2024-03-12 엘지디스플레이 주식회사 표시장치
CN107342045A (zh) * 2017-08-25 2017-11-10 武汉华星光电半导体显示技术有限公司 Amoled显示面板及显示装置
JP2020012977A (ja) * 2018-07-18 2020-01-23 株式会社ジャパンディスプレイ 表示装置
CN113412511A (zh) * 2019-02-22 2021-09-17 株式会社半导体能源研究所 眼镜式电子设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019205624A1 (zh) * 2018-04-27 2019-10-31 京东方科技集团股份有限公司 显示基板及其制造方法、显示面板和显示装置
US11239256B2 (en) 2018-04-27 2022-02-01 Boe Technology Group Co., Ltd. Display substrate, manufacturing method thereof, display panel, and display device

Also Published As

Publication number Publication date
JP2001013524A (ja) 2001-01-19

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