JP7520690B2 - 表示装置 - Google Patents
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- JP7520690B2 JP7520690B2 JP2020179098A JP2020179098A JP7520690B2 JP 7520690 B2 JP7520690 B2 JP 7520690B2 JP 2020179098 A JP2020179098 A JP 2020179098A JP 2020179098 A JP2020179098 A JP 2020179098A JP 7520690 B2 JP7520690 B2 JP 7520690B2
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- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 31
- 230000002093 peripheral effect Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000010408 film Substances 0.000 description 102
- 239000002245 particle Substances 0.000 description 20
- 239000010409 thin film Substances 0.000 description 11
- 102220574842 Gap junction alpha-3 protein_L11S_mutation Human genes 0.000 description 7
- 239000003094 microcapsule Substances 0.000 description 6
- 102220554118 Cyclic GMP-AMP synthase_L21H_mutation Human genes 0.000 description 5
- 102220516730 Protease-associated domain-containing protein 1_L21S_mutation Human genes 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910004438 SUB2 Inorganic materials 0.000 description 3
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 101150018444 sub2 gene Proteins 0.000 description 3
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 2
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 2
- 229910004444 SUB1 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
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- 239000007769 metal material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- XRKZVXDFKCVICZ-IJLUTSLNSA-N SCB1 Chemical compound CC(C)CCCC[C@@H](O)[C@H]1[C@H](CO)COC1=O XRKZVXDFKCVICZ-IJLUTSLNSA-N 0.000 description 1
- 101100439280 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CLB1 gene Proteins 0.000 description 1
- 101100072644 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) INO2 gene Proteins 0.000 description 1
- 101100454372 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) LCB2 gene Proteins 0.000 description 1
- 101100489624 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RTS1 gene Proteins 0.000 description 1
- 101100229953 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SCT1 gene Proteins 0.000 description 1
- 101100194362 Schizosaccharomyces pombe (strain 972 / ATCC 24843) res1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/16756—Insulating layers
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
- G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on translational movement of particles in a fluid under the influence of an applied field
- G02F1/1675—Constructional details
- G02F1/1676—Electrodes
- G02F1/16766—Electrodes for active matrices
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Description
絶縁基板と、前記絶縁基板の上方において周辺領域に配置され、ゲートドライバに含まれる第1ゲート電極と、前記絶縁基板の上方において表示領域に配置され、前記ゲートドライバによって駆動されるゲート線と一体の第2ゲート電極と、前記第1ゲート電極及び前記第2ゲート電極を覆う第1絶縁膜と、前記第1ゲート電極の上方に配置され、前記第1絶縁膜に接する第1酸化物半導体と、前記第2ゲート電極の上方に配置され、前記第1絶縁膜に接する第2酸化物半導体と、前記第1酸化物半導体及び前記第2酸化物半導体を覆う第2絶縁膜と、前記第2絶縁膜に接し、前記第2絶縁膜の第1開口において前記第1酸化物半導体に接する第1ソース電極と、前記第2絶縁膜に接し、前記第2絶縁膜の第2開口において前記第1酸化物半導体に接する第1ドレイン電極と、前記第2絶縁膜に接し、前記第2絶縁膜の第3開口において前記第2酸化物半導体に接する第2ソース電極と、前記第2絶縁膜に接し、前記第2絶縁膜の第4開口において前記第2酸化物半導体に接する第2ドレイン電極と、を備え、前記第1開口と前記第2開口との間における前記第2絶縁膜及び前記第1ソース電極の積層体の長さは、前記第3開口と前記第4開口との間における前記第2絶縁膜及び前記第2ソース電極の積層体の長さより大きい。
絶縁基板と、前記絶縁基板の上方において周辺領域に配置され、ゲートドライバに含まれる第1ゲート電極と、前記絶縁基板の上方において表示領域に配置され、前記ゲートドライバによって駆動されるゲート線と一体の第2ゲート電極と、前記第1ゲート電極及び前記第2ゲート電極を覆う第1絶縁膜と、前記第1ゲート電極の上方に配置され、前記第1絶縁膜に接する第1酸化物半導体と、前記第2ゲート電極の上方に配置され、前記第1絶縁膜に接する第2酸化物半導体と、備え、前記第1酸化物半導体は、第1チャネル領域と、前記第1チャネル領域に隣接し前記第1チャネル領域よりも低抵抗の第1低抵抗領域と、を有し、前記第2酸化物半導体は、第2チャネル領域と、前記第2チャネル領域に隣接し前記第2チャネル領域よりも低抵抗の第2低抵抗領域と、を有し、前記第1低抵抗領域の長さは、前記第2低抵抗領域の長さより大きい。
共通電極CEは、複数の画素PXに亘って配置されている。共通電極CEは、所定電圧が供給される電圧供給部Vcomに接続されている。
第1基板SUB1は、絶縁基板10と、絶縁膜11乃至14と、第2トランジスタTR2と、容量配線CWと、画素電極PEと、を備えている。なお、第2トランジスタTR2の構造については、簡略化して図示している。また、絶縁膜11乃至14の各々も簡略化して図示している。
なお、ここで説明した電気泳動表示装置は、モノクロ仕様に限定されるわけではなく、赤色粒子、緑色粒子、青色粒子を含む複数のカラー粒子を電気泳動法で動作させるカラー仕様にも適用できる。特にカラー仕様の場合、高い電圧を印加することで、元々遅い電気泳動速度を向上でき、カラー画面の高速書換えが可能となる利点がある。
第1トランジスタTR1は、周辺領域SAに配置され、図1に示したゲートドライバGD1及びGD2に含まれる。第1トランジスタTR1は、第1ゲート電極GE1と、第1酸化物半導体SC1と、第1ソース電極SE1と、第1ドレイン電極DE1と、を備えている。本明細書においては、シフトレジスタSRにおいて、電源線と電気的に接続される側(入力側)の電極を第1ソース電極SE1と称し、表示領域DAのゲート線GLと電気的に接続される側(出力側)の電極を第1ドレイン電極DE1と称している。
第1ソース電極SE1は、絶縁膜12の第1開口CH1において、第1酸化物半導体SC1に接している。第1ドレイン電極DE1は、絶縁膜12の第2開口CH2において、第1酸化物半導体SC1に接している。
第1ソース電極SE1、第1ドレイン電極DE1、第2ソース電極SE2、及び、第2ドレイン電極DE2は、同一材料によって形成されている。第2酸化物半導体SC2は、第1酸化物半導体SC1と同一材料によって形成されている。
積層体LMS1の長さL1Sは、積層体LMS2の長さL2Sより大きい(L1S>L2S)。換言すると、第1低抵抗領域LS1の長さL11Sは、第2低抵抗領域LS2の長さL21Sより大きい(L11S>L21S)。
ストレス付与前とストレス付与後とでVg-Id特性を比較すると、ドレイン電流が出力されるゲート電圧(しきい値電圧)が大きくシフトしていることが確認された。
ストレス付与前とストレス付与後とでVg-Id特性を比較すると、ドレイン電流が出力されるゲート電圧(しきい値電圧)がほとんどシフトしていないことが確認された。つまり、本実施形態に係る第1トランジスタTR1によれば、ソース-ドレイン間に70V以上の高電圧が長時間あるいは繰り返し印加された後であっても、しきい値がほとんど変動せず、高い信頼性が得られる。
尚、本実施形態では、要求される駆動電圧の高い電気泳動表示装置について説明したが、本発明は、通常の液晶ディスプレイより高い印加電圧が必要とされる液晶ディスプレイや、高速応答用の液晶ディスプレイとして、ポリマー分散型液晶やそれを用いた高速駆動ディスプレイへの適用も可能である。
10…絶縁基板 11…絶縁膜(第1絶縁膜) 12…絶縁膜(第2絶縁膜)
13…絶縁膜(第3絶縁膜)
TR1…第1トランジスタ GE1…第1ゲート電極 SE1…第1ソース電極
DE1…第1ドレイン電極 SC1…第1酸化物半導体 C1…第1チャネル領域
LS1、LD1…第1低抵抗領域 CH1…第1開口 CH2…第2開口
TR2…第2トランジスタ GE2…第2ゲート電極 SE2…第2ソース電極
DE2…第2ドレイン電極 SC2…第2酸化物半導体 C2…第2チャネル領域
LS2、LD2…第2低抵抗領域 CH3…第3開口 CH4…第4開口
Claims (10)
- 絶縁基板と、
前記絶縁基板の上方において周辺領域に配置され、ゲートドライバに含まれる第1ゲート電極と、
前記絶縁基板の上方において表示領域に配置され、前記ゲートドライバによって駆動されるゲート線と一体の第2ゲート電極と、
前記第1ゲート電極及び前記第2ゲート電極を覆う第1絶縁膜と、
前記第1ゲート電極の上方に配置され、前記第1絶縁膜に接する第1酸化物半導体と、
前記第2ゲート電極の上方に配置され、前記第1絶縁膜に接する第2酸化物半導体と、
前記第1酸化物半導体及び前記第2酸化物半導体を覆う第2絶縁膜と、
前記第2絶縁膜に接し、前記第2絶縁膜の第1開口において前記第1酸化物半導体に接する第1ソース電極と、
前記第2絶縁膜に接し、前記第2絶縁膜の第2開口において前記第1酸化物半導体に接する第1ドレイン電極と、
前記第2絶縁膜に接し、前記第2絶縁膜の第3開口において前記第2酸化物半導体に接する第2ソース電極と、
前記第2絶縁膜に接し、前記第2絶縁膜の第4開口において前記第2酸化物半導体に接する第2ドレイン電極と、
を備え、
前記第1開口と前記第2開口との間における前記第2絶縁膜及び前記第1ソース電極の積層体の長さは、前記第3開口と前記第4開口との間における前記第2絶縁膜及び前記第2ソース電極の積層体の長さより大きい、表示装置。 - 前記第1開口と前記第2開口との間における前記第2絶縁膜及び前記第1ドレイン電極の積層体の長さは、前記第3開口と前記第4開口との間における前記第2絶縁膜及び前記第2ドレイン電極の積層体の長さより大きい、請求項1に記載の表示装置。
- 前記第2絶縁膜及び前記第1ソース電極の積層体の長さ、及び、前記第2絶縁膜及び前記第1ドレイン電極の積層体の長さは、2μm以上である、請求項2に記載の表示装置。
- 前記第1酸化物半導体は、
前記第1ソース電極及び前記第1ドレイン電極の間隙に重畳する第1チャネル領域と、
前記第2絶縁膜及び前記第1ソース電極の積層体及び前記第2絶縁膜及び前記第1ドレイン電極の積層体にそれぞれ重畳し、前記第1チャネル領域よりも低抵抗の第1低抵抗領域と、
を有している、請求項2に記載の表示装置。 - 前記第1酸化物半導体及び前記第2酸化物半導体は、同一面上に位置し、
前記第2絶縁膜及び前記第1ソース電極の積層体、及び、前記第2絶縁膜及び前記第1ドレイン電極の積層体は、前記第1ゲート電極の直上に位置し、
前記第2絶縁膜及び前記第2ソース電極の積層体、及び、前記第2絶縁膜及び前記第2ドレイン電極の積層体は、前記第2ゲート電極の直上に位置している、請求項2に記載の表示装置。 - さらに、前記第1ソース電極と前記第1ドレイン電極との間において、前記第2絶縁膜に接する第3絶縁膜を備え、
前記第3絶縁膜は、シリコン酸化物によって形成されている、請求項1乃至5のいずれか1項に記載の表示装置。 - 絶縁基板と、
前記絶縁基板の上方において周辺領域に配置され、ゲートドライバに含まれる第1ゲート電極と、
前記絶縁基板の上方において表示領域に配置され、前記ゲートドライバによって駆動されるゲート線と一体の第2ゲート電極と、
前記第1ゲート電極及び前記第2ゲート電極を覆う第1絶縁膜と、
前記第1ゲート電極の上方に配置され、前記第1絶縁膜に接する第1酸化物半導体と、
前記第2ゲート電極の上方に配置され、前記第1絶縁膜に接する第2酸化物半導体と、
を備え、
前記第1酸化物半導体は、第1チャネル領域と、前記第1チャネル領域に隣接し前記第1チャネル領域よりも低抵抗の第1低抵抗領域と、を有し、
前記第2酸化物半導体は、第2チャネル領域と、前記第2チャネル領域に隣接し前記第2チャネル領域よりも低抵抗の第2低抵抗領域と、を有し、
前記第1低抵抗領域の長さは、前記第2低抵抗領域の長さより大きい、表示装置。 - 前記第1低抵抗領域の長さは、2μm以上である、請求項7に記載の表示装置。
- 前記第1酸化物半導体及び前記第2酸化物半導体は、同一面上に位置し、
前記第1低抵抗領域は、前記第1ゲート電極の直上に位置し、
前記第2低抵抗領域は、前記第2ゲート電極の直上に位置している、請求項7に記載の表示装置。 - 前記第1ゲート電極と前記第1酸化物半導体との間に介在する前記第1絶縁膜の膜厚は、300nm以上である、請求項1乃至9のいずれか1項に記載の表示装置。
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