JP4360736B2 - 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法 - Google Patents

不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法 Download PDF

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Publication number
JP4360736B2
JP4360736B2 JP2000097705A JP2000097705A JP4360736B2 JP 4360736 B2 JP4360736 B2 JP 4360736B2 JP 2000097705 A JP2000097705 A JP 2000097705A JP 2000097705 A JP2000097705 A JP 2000097705A JP 4360736 B2 JP4360736 B2 JP 4360736B2
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Japan
Prior art keywords
memory
erase
pulse
threshold voltage
memory transistor
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Expired - Lifetime
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JP2000097705A
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English (en)
Japanese (ja)
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JP2001283595A (ja
JP2001283595A5 (enExample
Inventor
敦 大庭
悟 清水
好和 宮脇
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2000097705A priority Critical patent/JP4360736B2/ja
Priority to US09/676,758 priority patent/US6330192B1/en
Priority to KR10-2000-0073248A priority patent/KR100381804B1/ko
Publication of JP2001283595A publication Critical patent/JP2001283595A/ja
Priority to US09/985,013 priority patent/US6567316B1/en
Publication of JP2001283595A5 publication Critical patent/JP2001283595A5/ja
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Publication of JP4360736B2 publication Critical patent/JP4360736B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

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JP2000097705A 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法 Expired - Lifetime JP4360736B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000097705A JP4360736B2 (ja) 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US09/676,758 US6330192B1 (en) 2000-01-27 2000-10-02 Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device
KR10-2000-0073248A KR100381804B1 (ko) 2000-01-27 2000-12-05 비휘발성 반도체 기억 장치 및 비휘발성 반도체 기억장치의 데이터 소거 방법
US09/985,013 US6567316B1 (en) 2000-01-27 2001-11-01 Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000018508 2000-01-27
JP2000-18508 2000-01-27
JP2000097705A JP4360736B2 (ja) 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法

Publications (3)

Publication Number Publication Date
JP2001283595A JP2001283595A (ja) 2001-10-12
JP2001283595A5 JP2001283595A5 (enExample) 2006-09-28
JP4360736B2 true JP4360736B2 (ja) 2009-11-11

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JP2000097705A Expired - Lifetime JP4360736B2 (ja) 2000-01-27 2000-03-31 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法

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US (2) US6330192B1 (enExample)
JP (1) JP4360736B2 (enExample)
KR (1) KR100381804B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2731959C1 (ru) * 2019-10-02 2020-09-09 Акционерное общество "Центральный научно-исследовательский радиотехнический институт имени академика А.И. Берга" Устройство и способ стирания информации с системы адресации микросхемы

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
TW439293B (en) * 1999-03-18 2001-06-07 Toshiba Corp Nonvolatile semiconductor memory
US6914827B2 (en) * 1999-07-28 2005-07-05 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
US7366020B2 (en) * 1999-07-28 2008-04-29 Samsung Electronics Co., Ltd. Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
KR100308192B1 (ko) * 1999-07-28 2001-11-01 윤종용 플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법
JP4360736B2 (ja) * 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6928001B2 (en) 2000-12-07 2005-08-09 Saifun Semiconductors Ltd. Programming and erasing methods for a non-volatile memory cell
US6501681B1 (en) * 2000-08-15 2002-12-31 Advanced Micro Devices, Inc. Using a low drain bias during erase verify to ensure complete removal of residual charge in the nitride in sonos non-volatile memories
KR100519534B1 (ko) * 2000-11-09 2005-10-05 주식회사 하이닉스반도체 플래쉬 메모리 소자의 소거 방법
DE60140039D1 (de) * 2001-02-05 2009-11-12 St Microelectronics Srl Löschverfahren für einen Flash-Speicher
US6556481B1 (en) * 2001-02-21 2003-04-29 Aplus Flash Technology, Inc. 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
US6584017B2 (en) 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
TWI292914B (enExample) * 2002-01-17 2008-01-21 Macronix Int Co Ltd
US7190620B2 (en) 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US6700818B2 (en) 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6862223B1 (en) 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
JP4007909B2 (ja) * 2002-12-26 2007-11-14 株式会社ルネサステクノロジ 不揮発性半導体記憶装置のデータ消去方法
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7085170B2 (en) 2003-08-07 2006-08-01 Micron Technology, Ind. Method for erasing an NROM cell
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
TWI247311B (en) * 2004-03-25 2006-01-11 Elite Semiconductor Esmt Circuit and method for preventing nonvolatile memory from over erasure
US7652930B2 (en) 2004-04-01 2010-01-26 Saifun Semiconductors Ltd. Method, circuit and system for erasing one or more non-volatile memory cells
US7317633B2 (en) 2004-07-06 2008-01-08 Saifun Semiconductors Ltd Protection of NROM devices from charge damage
US7540167B2 (en) 2004-07-08 2009-06-02 Dean Murphy Condensed water production system
KR100672938B1 (ko) 2004-07-21 2007-01-24 삼성전자주식회사 플래시 메모리를 위한 선택적 소거 방법
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7535765B2 (en) 2004-12-09 2009-05-19 Saifun Semiconductors Ltd. Non-volatile memory device and method for reading cells
EP1686592A3 (en) 2005-01-19 2007-04-25 Saifun Semiconductors Ltd. Partial erase verify
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
EP1729306A1 (en) * 2005-06-01 2006-12-06 STMicroelectronics S.r.l. NAND flash memory device with compacted cell threshold voltage distribution
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
EP1746645A3 (en) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Memory array with sub-minimum feature size word line spacing and method of fabrication
JP2007035214A (ja) * 2005-07-29 2007-02-08 Renesas Technology Corp 不揮発性半導体記憶装置
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US8116142B2 (en) * 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
US7221138B2 (en) 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7352627B2 (en) 2006-01-03 2008-04-01 Saifon Semiconductors Ltd. Method, system, and circuit for operating a non-volatile memory array
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7638835B2 (en) 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7319615B1 (en) * 2006-08-02 2008-01-15 Spansion Llc Ramp gate erase for dual bit flash memory
US7605579B2 (en) 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
KR101348173B1 (ko) * 2007-05-25 2014-01-08 삼성전자주식회사 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템
JP2009163782A (ja) * 2007-12-13 2009-07-23 Toshiba Corp 半導体記憶装置
US7995392B2 (en) 2007-12-13 2011-08-09 Kabushiki Kaisha Toshiba Semiconductor memory device capable of shortening erase time
KR101506336B1 (ko) * 2008-10-10 2015-03-27 삼성전자주식회사 산화막 복구 기능을 갖는 비휘발성 메모리 장치 그리고 그것의 블록 관리 방법
JP5450013B2 (ja) 2009-07-15 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
KR20110014923A (ko) * 2009-08-06 2011-02-14 삼성전자주식회사 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
JP5385220B2 (ja) * 2010-06-30 2014-01-08 ルネサスエレクトロニクス株式会社 不揮発性メモリ、データ処理装置、及びマイクロコンピュータ応用システム
KR20120030818A (ko) 2010-09-20 2012-03-29 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 소거 방법
US9001578B2 (en) * 2012-09-11 2015-04-07 Seagate Technology Llc Soft erasure of memory cells
KR102337044B1 (ko) * 2015-07-27 2021-12-09 에스케이하이닉스 주식회사 반도체장치 및 반도체시스템
CN113409862A (zh) * 2021-06-28 2021-09-17 芯天下技术股份有限公司 一种存储器擦除方法、装置、电子设备及存储介质

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283708A (ja) * 1992-04-02 1993-10-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置，その製造方法および試験方法
JPH0628875A (ja) 1992-07-10 1994-02-04 Sony Corp フラッシュ型ｅ２ ｐｒｏｍの消去方法
JPH06251593A (ja) * 1993-02-24 1994-09-09 Matsushita Electron Corp フラッシュメモリの消去あるいは書き込み制御方法
US5400286A (en) * 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance
US5661685A (en) * 1995-09-25 1997-08-26 Xilinx, Inc. Programmable logic device with configurable power supply
JPH09320282A (ja) * 1996-05-27 1997-12-12 Sharp Corp 不揮発性半導体記憶装置の消去制御方法
KR100257854B1 (ko) * 1997-12-10 2000-06-01 김영환 플래쉬 메모리의 소거 방법
DE69824386D1 (de) * 1998-01-22 2004-07-15 St Microelectronics Srl Verfahren für kontrolliertes Löschen von Speicheranordnungen, insbesondere Analog- oder Mehrwert-Flash-EEPROM Anordnungen
JP4360736B2 (ja) * 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6252803B1 (en) * 2000-10-23 2001-06-26 Advanced Micro Devices, Inc. Automatic program disturb with intelligent soft programming for flash cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2731959C1 (ru) * 2019-10-02 2020-09-09 Акционерное общество "Центральный научно-исследовательский радиотехнический институт имени академика А.И. Берга" Устройство и способ стирания информации с системы адресации микросхемы

Also Published As

Publication number Publication date
JP2001283595A (ja) 2001-10-12
US6567316B1 (en) 2003-05-20
KR20010077936A (ko) 2001-08-20
KR100381804B1 (ko) 2003-05-01
US6330192B1 (en) 2001-12-11

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