JP4335867B2 - エピタキシャル析出層を備えた半導体ウェハ及び前記半導体ウェハの製造方法 - Google Patents
エピタキシャル析出層を備えた半導体ウェハ及び前記半導体ウェハの製造方法 Download PDFInfo
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- JP4335867B2 JP4335867B2 JP2005363124A JP2005363124A JP4335867B2 JP 4335867 B2 JP4335867 B2 JP 4335867B2 JP 2005363124 A JP2005363124 A JP 2005363124A JP 2005363124 A JP2005363124 A JP 2005363124A JP 4335867 B2 JP4335867 B2 JP 4335867B2
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- 238000000034 method Methods 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 55
- 239000002019 doping agent Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 42
- 239000013078 crystal Substances 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052787 antimony Inorganic materials 0.000 description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
Description
Claims (5)
- n型又はp型のドーパント原子でn+型又はp+型にドープされている単結晶シリコンからなる、前面及び裏面を備えた基板ウェハを準備し、n型又はp型のドーパント原子を前記基板ウェハ中へ導入して、基板ウェハの前面から基板ウェハ中へ達しかつ少なくとも20μmの厚さを有しかつ基板ウェハ中の比抵抗よりも少なくとも20%低い比抵抗を有するn++又はp++ドープされた層を作成し、エピタキシャル層を前記基板ウェハの前面上に析出させ、かつ基板ウェハの厚さが120μmより薄くなるまで又は基板ウェハがもっぱら前記n++又はp++ドープされた層まで基板ウェハの裏面の材料を除去することを有する、半導体ウェハの製造方法。
- ドーパント原子を拡散により基板ウェハ中へ導入することを特徴とする、請求項1記載の方法。
- ドーパント原子を注入により基板ウェハ中へ導入することを特徴とする、請求項1記載の方法。
- 基板ウェハの厚さを、電子工学デバイスの製造プロセスの後に減少させることを特徴とする、請求項1から3までのいずれか1項記載の方法。
- 基板ウェハの裏面を研削することを特徴とする、請求項1から4までのいずれか1項記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004060624A DE102004060624B4 (de) | 2004-12-16 | 2004-12-16 | Halbleiterscheibe mit epitaktisch abgeschiedener Schicht und Verfahren zur Herstellung der Halbleiterscheibe |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006173630A JP2006173630A (ja) | 2006-06-29 |
JP4335867B2 true JP4335867B2 (ja) | 2009-09-30 |
Family
ID=36580173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005363124A Active JP4335867B2 (ja) | 2004-12-16 | 2005-12-16 | エピタキシャル析出層を備えた半導体ウェハ及び前記半導体ウェハの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060131649A1 (ja) |
JP (1) | JP4335867B2 (ja) |
KR (1) | KR100763426B1 (ja) |
CN (1) | CN1805121B (ja) |
DE (1) | DE102004060624B4 (ja) |
TW (1) | TWI295482B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100709436B1 (ko) * | 2006-02-17 | 2007-04-18 | 주식회사 하이닉스반도체 | 멀티 칩 패키지 장치 및 그 형성 방법 |
KR100793607B1 (ko) * | 2006-06-27 | 2008-01-10 | 매그나칩 반도체 유한회사 | 에피텍셜 실리콘 웨이퍼 및 그 제조방법 |
US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
JP5453749B2 (ja) * | 2008-09-05 | 2014-03-26 | 株式会社Sumco | 垂直シリコンデバイス用シリコンウェーハの製造方法及び垂直シリコンデバイス用シリコン単結晶引き上げ装置 |
GB2478590A (en) | 2010-03-12 | 2011-09-14 | Precitec Optronik Gmbh | Apparatus and method for monitoring a thickness of a silicon wafer |
CN102412271A (zh) * | 2011-09-15 | 2012-04-11 | 上海晶盟硅材料有限公司 | 外延片衬底、外延片及半导体器件 |
US8536035B2 (en) * | 2012-02-01 | 2013-09-17 | International Business Machines Corporation | Silicon-on-insulator substrate and method of forming |
US9349785B2 (en) * | 2013-11-27 | 2016-05-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Formation of semiconductor device with resistors |
KR102323392B1 (ko) * | 2014-06-13 | 2021-11-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Epi 챔버 상의 이중 보조 도펀트 유입구들 |
DE102017121693B4 (de) * | 2017-09-19 | 2022-12-08 | Infineon Technologies Ag | Dotierungsverfahren |
DE102018111213A1 (de) * | 2018-05-09 | 2019-11-14 | Infineon Technologies Ag | Halbleitervorrichtung und Herstellungsverfahren |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154661A (ja) | 1984-01-25 | 1985-08-14 | Seiko Epson Corp | 半導体装置 |
GB2156148B (en) * | 1984-03-05 | 1987-10-21 | Plessey Co Plc | Diode |
US5242859A (en) | 1992-07-14 | 1993-09-07 | International Business Machines Corporation | Highly doped semiconductor material and method of fabrication thereof |
JP3143040B2 (ja) * | 1995-06-06 | 2001-03-07 | 三菱化学株式会社 | エピタキシャルウエハおよびその製造方法 |
JPH09232324A (ja) * | 1996-02-23 | 1997-09-05 | Nec Corp | 半導体基板及びその製造方法 |
JP4061418B2 (ja) | 1996-07-30 | 2008-03-19 | 株式会社Sumco | シリコン基板とその製造方法 |
ATE511701T1 (de) | 2000-03-03 | 2011-06-15 | Nxp Bv | Verfahren zur herstellung einer schottky varicap diode |
JP2002203772A (ja) | 2000-12-28 | 2002-07-19 | Nec Corp | 電子線露光用マスクの製造方法及び薄膜化方法 |
US7034594B2 (en) * | 2004-04-28 | 2006-04-25 | Seiko Epson Corporation | Differential master/slave CML latch |
-
2004
- 2004-12-16 DE DE102004060624A patent/DE102004060624B4/de active Active
-
2005
- 2005-11-07 KR KR1020050105889A patent/KR100763426B1/ko active IP Right Grant
- 2005-12-09 US US11/298,012 patent/US20060131649A1/en not_active Abandoned
- 2005-12-14 CN CN2005101295805A patent/CN1805121B/zh active Active
- 2005-12-15 TW TW094144394A patent/TWI295482B/zh active
- 2005-12-16 JP JP2005363124A patent/JP4335867B2/ja active Active
-
2008
- 2008-07-28 US US12/180,739 patent/US8449675B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20080286951A1 (en) | 2008-11-20 |
TWI295482B (en) | 2008-04-01 |
KR100763426B1 (ko) | 2007-10-04 |
US8449675B2 (en) | 2013-05-28 |
TW200636821A (en) | 2006-10-16 |
CN1805121B (zh) | 2010-10-13 |
DE102004060624B4 (de) | 2010-12-02 |
CN1805121A (zh) | 2006-07-19 |
US20060131649A1 (en) | 2006-06-22 |
KR20060069249A (ko) | 2006-06-21 |
JP2006173630A (ja) | 2006-06-29 |
DE102004060624A1 (de) | 2006-06-29 |
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