JP4335845B2 - 液晶表示装置及びその製造方法 - Google Patents
液晶表示装置及びその製造方法 Download PDFInfo
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- JP4335845B2 JP4335845B2 JP2005155572A JP2005155572A JP4335845B2 JP 4335845 B2 JP4335845 B2 JP 4335845B2 JP 2005155572 A JP2005155572 A JP 2005155572A JP 2005155572 A JP2005155572 A JP 2005155572A JP 4335845 B2 JP4335845 B2 JP 4335845B2
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Description
4,104:データーライン
6,106:薄膜トランジスター
8,108:ゲート電極
10,110:ソース電極
12,112:ドレーン電極
14,116:活性層
16,24,30,38,130,138:コンタクトホール
18,118:画素電極
20,120:ストリッジキャッパシター
22:ストリッジ上部電極
16,126:ゲートパッド
28,128:ゲートパッド下部電極
32,132:ゲートパッド上部電極
34,134:データーパッド
36,136:データーパッド下部電極
40,140:データーパッド上部電極
42.142:基板
44,144:ゲート絶縁膜
48,146:オミック接触層
50,150:保護膜
101:第1導電層
103:第2導電層
105:ソース・ドレーン金属層
115:非晶質シリコン層
122:ストリッジ下部電極
145:不純物ドーピングされた非晶質シリコン層
148:半導体パターン
160:ハフトーンマスク
162,214,234:遮断層
164,236:部分透過層
166,212,232:石英基板
167.219.239:フォトレジスト168A,220A,240A:第1フォトレジストパターン
168B,220B,240B:第2フォトレジストパターン
170:画素ホール
210.230:回折露光マスク
216:スリット
Claims (26)
- 透明な第1導電層と不透明な第2導電層が段差を有して積層された2重構造のゲートライン及びゲート電極と、前記ゲートラインと交差して、画素領域を定義するデーターラインと、前記ゲートライン及びデーターラインの間に形成されたゲート絶縁膜と、前記ゲートライン及びデーターラインと接続された薄膜トランジスターと、前記薄膜トランジスターのチャンネルを形成して、前記データーラインに沿って重畳された半導体層と、前記データーライン及び薄膜トランジスターを覆う保護膜と、前記保護膜を貫通する前記画素領域の画素ホールの内で、前記ゲート絶縁膜の上に形成され、前記薄膜トランジスターと接続された画素電極と、前記画素電極と前記ゲート絶縁膜を間に置いて重畳され、前記第1導電層から突出されたストリッジ下部電極に構成されたストリッジキャッパシターとを備えることを特徴とする液晶表示装置。
- 前記ゲートラインと接続された2重構造のゲートパッド下部電極と、前記ゲート絶縁膜及び保護膜を貫通するコンタクトホールの内に形成され、前記ゲートパッド下部電極と接続されたゲートパッド上部電極を含めるゲートパッドとをさらに備え、前記ゲートパッド下部電極は前記第1導電層を前記第2導電層が段差を有して積層されることを特徴とする請求項1に記載の液晶表示装置。
- 前記データーラインと接続されたデーターパッド下部電極と、前記保護膜を貫通するコンタクトホールの内に形成され、前記のデーターパッド下部電極と接続されたデーターパッド上部電極を含めるデーターパッドとをさらに備え、前記半導体層は、前記データーパッド下部電極とも重畳されることを特徴とする請求項1に記載の液晶表示装置。
- 前記画素電極は、前記画素ホールを通じて露出された前記薄膜トランジスターのドレーン電極と側面接続されることを特徴とする請求項1に記載の液晶表示装置。
- 前記データーパッド上部電極は、前記コンタクトホールを通じて露出された前記データーパッド上部電極と側面接続されることを特徴とする請求項3に記載の液晶表示装置。
- 前記ゲートラインと接続された前記薄膜トランジスターのゲート電極も、前記2重構造に形成され、前記薄膜トランジスターのソース及びドレーン電極とゲートパッド下部電極とが段差を有して積層されることを特徴とする請求項1に記載の液晶表示装置。
- 第1マスクを利用して、基板上に透明導電層と不透明導電層とが段差を有して積層された2重構造のゲートライン及びゲート電極と、前記透明導電層だけで成されたストリッジ下部電極を含めるゲートパターンを形成する段階と、前記ゲートパターンを覆うゲート絶縁膜を形成して、第2マスクを利用してそのゲート絶縁膜の上に半導体パターンと、ソース及びドレーン電極とデーターラインを含めるソース・ドレーンパターンを形成する段階と、第3マスクを利用して画素ホールを有する保護膜を形成し、前記ドレーン電極と接続され、前記ストリッジ下部電極と重畳された画素電極を前記画素ホールの内の前記ゲート絶縁膜の上に形成する段階とを含むことを特徴とする液晶表示装置の製造方法。
- 前記第1マスクは、第1ハフトーンマスクを含めることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記第2マスクは、回折露光マスクを含めることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記第3マスクは、第2ハフトーンマスクを含めることを特徴とする請求項8に記載の液晶表示装置の製造方法。
- 前記ゲートパターンを形成する段階は、前記基板の上に前記透明導電層である第1導電層と、第2導電層とを積層する段階と、前記第2導電層の上に前記第1マスクを利用したフォトリソグラフィー工程で相互異なる厚さを有する第1及び第2フォトレジストパターンを形成する段階と、前記第1及び第2フォトレジストパターンを利用した第1エッチング工程で、前記第1及び第2導電層をパターニングして、前記2重構造のゲートライン及びゲート電極と、ストリッジ下部電極を形成する段階と、前記第1フォトレジストパターンを利用した第2エッチング工程で、前記ストリッジ下部電極の上の第2導電層を除去する段階と、前記第1フォトレジストパターンを除去する段階とを含めることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記第1エッチング工程で、前記ストリッジ下部電極の上に、前記第2導電層が残存することを特徴とする請求項11に記載の液晶表示装置の製造方法。
- 前記第1エッチング工程の後、アッシング工程で前記第1フォトレジストパターンを薄くして、前記第2フォトレジストパターンを除去する段階を更に含めることを特徴とする請求項11に記載の液晶表示装置の製造方法。
- 前記半導体パターンは、前記データーラインと重畳させたことを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記ストリッジ下部電極は、前記ゲートラインの第1導電層から前記画素領域の方に突出し形成されたことを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記ゲートパターンを形成する段階は、前記ゲートラインと接続された前記2重構造のゲートパッド下部電極を形成する段階を、前記保護膜及び画素電極を形成する段階は、前記ゲートパッド下部電極が露出されるように前記保護膜及びゲート絶縁膜を貫通する第1コンタクトホールと、その第1コンタクトホールの内で、前記ゲートパッド下部電極と接続されるゲートパッド上部電極を形成する段階を更に含めることを特徴とする請求項7に記載の液晶表示装置の製造方法。
- 前記ゲートパッド下部電極は、前記2重構造を有することを特徴とする請求項16に記載の液晶表示装置の製造方法。
- 前記ソース・ドレーンパターンを形成する段階は、前記データーラインと接続されたデーターパッド下部電極を形成する段階を、前記保護膜及び画素電極を形成する段階は、前記保護膜を貫通する第2コンタクトホールと、その第2コンタクトホールの内で前記データーパッド下部電極と接続されるデーターパッド上部電極を形成する段階を更に含めることを特徴とする請求項16に記載の液晶表示装置の製造方法。
- 前記保護膜及び画素電極を形成する段階は、前記ソース・ドレーンパターンを覆う保護膜を形成する段階と、前記保護膜の上に前記第2マスクを利用したフォトリソグラフィー工程で相互異なる厚さを有する第1及び第2フォトレジストパターンを形成する段階と、前記第1及び第2フォトレジストパターンを利用した第1エッチング工程で、前記第1コンタクトホールを形成する段階と、前記第1フォトレジストパターンを利用した第2エッチング工程で、前記画素ホールと前記第2コンタクトホールを形成する段階と、前記第1フォトレジストパターンを覆うように透明導電膜を全面塗布する段階と、前記第1フォトレジストパターンと、その上の透明導電膜をリフト・オフ工程で除去し、前記画素電極、ゲートパッド上部電極、データーパッド上部電極を含める透明導電パターンを形成する段階とを含めることを特徴とする請求項18に記載の液晶表示装置の製造方法。
- 前記第1エッチング工程の後、アッシング工程で前記第1フォトレジストパターンの厚さを薄くして、前記第2フォトレジストパターンを除去する段階を更に含めることを特徴とする請求項19に記載の液晶表示装置の製造方法。
- 前記画素ホール及び第2コンタクトホールを形成する段階は、前記ドレーン電極及びデーターパッド下部電極の一部は露出させる段階を含めることを特徴とする請求項19に記載の液晶表示装置の製造方法。
- 前記画素電極は、前記ドレーン電極と側面接続されたことを特徴とする請求項21に記載の液晶表示装置の製造方法。
- 前記データーパッド上部電極は、前記データーパッド下部電極と側面接続されたことを特徴とする請求項21に記載の液晶表示装置の製造方法。
- 前記画素ホール及び第2コンタクトホールを形成する段階は、前記ドレーン電極及び前記データーパッド下部電極の露出部の下の半導体パターンも共にエッチングする段階を含めることを特徴とする請求項21に記載の液晶表示装置の製造方法。
- 前記画素ホールと、前記第2コンタクトホールを形成する段階は、前記第1フォトレジストパターンのエッジ部が前記保護膜のエッジ部より突出されるように、その保護膜を過エッチングすることを特徴とする請求項21に記載の液晶表示装置の製造方法。
- 前記第1及び第2導電層は、一定の段差を有するように形成されたことを特徴とする請求項7に記載の液晶表示装置の製造方法。
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CN1702531A (zh) | 2005-11-30 |
US20090085040A1 (en) | 2009-04-02 |
JP2005338856A (ja) | 2005-12-08 |
US7468527B2 (en) | 2008-12-23 |
US20050263768A1 (en) | 2005-12-01 |
KR101086478B1 (ko) | 2011-11-25 |
CN100421020C (zh) | 2008-09-24 |
KR20050112645A (ko) | 2005-12-01 |
US8017462B2 (en) | 2011-09-13 |
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