JP4335459B2 - ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 - Google Patents
ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 Download PDFInfo
- Publication number
- JP4335459B2 JP4335459B2 JP2000579945A JP2000579945A JP4335459B2 JP 4335459 B2 JP4335459 B2 JP 4335459B2 JP 2000579945 A JP2000579945 A JP 2000579945A JP 2000579945 A JP2000579945 A JP 2000579945A JP 4335459 B2 JP4335459 B2 JP 4335459B2
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- JP
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- Prior art keywords
- substrate
- window
- polishing
- radial
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/184,775 | 1998-11-02 | ||
US09/184,775 US6159073A (en) | 1998-11-02 | 1998-11-02 | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
PCT/US1999/025214 WO2000026609A2 (en) | 1998-11-02 | 1999-10-26 | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008173826A Division JP4484938B2 (ja) | 1998-11-02 | 2008-07-02 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003519361A JP2003519361A (ja) | 2003-06-17 |
JP2003519361A5 JP2003519361A5 (US20030104761A1-20030605-M00002.png) | 2008-08-07 |
JP4335459B2 true JP4335459B2 (ja) | 2009-09-30 |
Family
ID=22678288
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000579945A Expired - Lifetime JP4335459B2 (ja) | 1998-11-02 | 1999-10-26 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
JP2008173826A Expired - Lifetime JP4484938B2 (ja) | 1998-11-02 | 2008-07-02 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008173826A Expired - Lifetime JP4484938B2 (ja) | 1998-11-02 | 2008-07-02 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
Country Status (4)
Families Citing this family (171)
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- 1999-10-26 WO PCT/US1999/025214 patent/WO2000026609A2/en active Application Filing
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-
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Also Published As
Publication number | Publication date |
---|---|
US20040242123A1 (en) | 2004-12-02 |
US6524165B1 (en) | 2003-02-25 |
JP2008275641A (ja) | 2008-11-13 |
US20030104761A1 (en) | 2003-06-05 |
TW431948B (en) | 2001-05-01 |
US7018271B2 (en) | 2006-03-28 |
JP2003519361A (ja) | 2003-06-17 |
US6494766B1 (en) | 2002-12-17 |
US6764380B2 (en) | 2004-07-20 |
WO2000026609A3 (en) | 2002-10-03 |
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US6159073A (en) | 2000-12-12 |
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