JP4311376B2 - 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器 - Google Patents

半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器 Download PDF

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JP4311376B2
JP4311376B2 JP2005168373A JP2005168373A JP4311376B2 JP 4311376 B2 JP4311376 B2 JP 4311376B2 JP 2005168373 A JP2005168373 A JP 2005168373A JP 2005168373 A JP2005168373 A JP 2005168373A JP 4311376 B2 JP4311376 B2 JP 4311376B2
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Prior art keywords
electrode
semiconductor substrate
electrically connected
semiconductor device
electronic
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JP2005168373A
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Japanese (ja)
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JP2006344737A (ja
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春樹 伊東
伸晃 橋元
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2005168373A priority Critical patent/JP4311376B2/ja
Priority to US11/433,901 priority patent/US7495331B2/en
Priority to KR1020060045642A priority patent/KR20060128640A/ko
Priority to TW095119256A priority patent/TWI325686B/zh
Priority to EP06011084A priority patent/EP1732215B1/de
Priority to CNA2006100887627A priority patent/CN1877989A/zh
Publication of JP2006344737A publication Critical patent/JP2006344737A/ja
Priority to US12/237,750 priority patent/US8012864B2/en
Application granted granted Critical
Publication of JP4311376B2 publication Critical patent/JP4311376B2/ja
Priority to US12/947,861 priority patent/US8004077B2/en
Priority to US13/185,039 priority patent/US8294260B2/en
Priority to US13/624,324 priority patent/US8673767B2/en
Priority to US14/156,806 priority patent/US8896104B2/en
Priority to US14/521,614 priority patent/US20150041992A1/en
Priority to US16/016,329 priority patent/US10361144B2/en
Priority to US16/016,327 priority patent/US10283438B2/en
Priority to US16/016,285 priority patent/US10262923B2/en
Priority to US16/154,711 priority patent/US10312182B2/en
Priority to US16/435,143 priority patent/US10424533B1/en
Priority to US16/569,596 priority patent/US10636726B2/en
Priority to US16/665,707 priority patent/US10727166B2/en
Priority to US16/939,304 priority patent/US11205608B2/en
Priority to US17/555,795 priority patent/US20220115296A1/en
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JP2005168373A 2005-06-08 2005-06-08 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器 Active JP4311376B2 (ja)

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JP2005168373A JP4311376B2 (ja) 2005-06-08 2005-06-08 半導体装置、半導体装置の製造方法、電子部品、回路基板及び電子機器
US11/433,901 US7495331B2 (en) 2005-06-08 2006-05-12 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
KR1020060045642A KR20060128640A (ko) 2005-06-08 2006-05-22 반도체 장치, 반도체 장치의 제조 방법, 전자 부품, 회로기판, 및 전자 기기
EP06011084A EP1732215B1 (de) 2005-06-08 2006-05-30 Halbleiterbauelement, Herstellungsverfahren für ein Halbleiterbauelement, elektronisches Bauelement, Schaltungssubstrat, und elektronische Vorrichtung
TW095119256A TWI325686B (en) 2005-06-08 2006-05-30 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
CNA2006100887627A CN1877989A (zh) 2005-06-08 2006-06-05 半导体装置、半导体装置的制造方法、电子器件、电路基板及电子设备
US12/237,750 US8012864B2 (en) 2005-06-08 2008-09-25 Manufacturing method for interconnection having stress-absorbing layer between the semiconductor substrate and the external connection terminal
US12/947,861 US8004077B2 (en) 2005-06-08 2010-11-17 Interconnection of land section to wiring layers at center of external connection terminals in semiconductor device and manufacturing thereof
US13/185,039 US8294260B2 (en) 2005-06-08 2011-07-18 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US13/624,324 US8673767B2 (en) 2005-06-08 2012-09-21 Manufacturing method for semiconductor device
US14/156,806 US8896104B2 (en) 2005-06-08 2014-01-16 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US14/521,614 US20150041992A1 (en) 2005-06-08 2014-10-23 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/016,285 US10262923B2 (en) 2005-06-08 2018-06-22 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/016,329 US10361144B2 (en) 2005-06-08 2018-06-22 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/016,327 US10283438B2 (en) 2005-06-08 2018-06-22 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/154,711 US10312182B2 (en) 2005-06-08 2018-10-08 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/435,143 US10424533B1 (en) 2005-06-08 2019-06-07 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/569,596 US10636726B2 (en) 2005-06-08 2019-09-12 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/665,707 US10727166B2 (en) 2005-06-08 2019-10-28 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
US16/939,304 US11205608B2 (en) 2005-06-08 2020-07-27 Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
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