JP4278705B1 - エッチング液 - Google Patents
エッチング液 Download PDFInfo
- Publication number
- JP4278705B1 JP4278705B1 JP2008267719A JP2008267719A JP4278705B1 JP 4278705 B1 JP4278705 B1 JP 4278705B1 JP 2008267719 A JP2008267719 A JP 2008267719A JP 2008267719 A JP2008267719 A JP 2008267719A JP 4278705 B1 JP4278705 B1 JP 4278705B1
- Authority
- JP
- Japan
- Prior art keywords
- copper
- etching solution
- phenyltetrazole
- etching
- nitrobenzotriazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052802 copper Inorganic materials 0.000 claims abstract description 66
- 239000010949 copper Substances 0.000 claims abstract description 66
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 28
- UTMDJGPRCLQPBT-UHFFFAOYSA-N 4-nitro-1h-1,2,3-benzotriazole Chemical class [O-][N+](=O)C1=CC=CC2=NNN=C12 UTMDJGPRCLQPBT-UHFFFAOYSA-N 0.000 claims abstract description 25
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 24
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims abstract description 8
- 150000008107 benzenesulfonic acids Chemical class 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 11
- 235000002639 sodium chloride Nutrition 0.000 claims description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 claims description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- IYPXPGSELZFFMI-UHFFFAOYSA-N 1-phenyltetrazole Chemical compound C1=NN=NN1C1=CC=CC=C1 IYPXPGSELZFFMI-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000011780 sodium chloride Substances 0.000 claims description 3
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- 235000011167 hydrochloric acid Nutrition 0.000 claims description 2
- 239000001103 potassium chloride Substances 0.000 claims description 2
- 235000011164 potassium chloride Nutrition 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 description 45
- 239000000243 solution Substances 0.000 description 38
- 239000000758 substrate Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 12
- 239000002244 precipitate Substances 0.000 description 8
- 239000000047 product Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000011282 treatment Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 3
- 229940092714 benzenesulfonic acid Drugs 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- 239000005749 Copper compound Substances 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 150000003536 tetrazoles Chemical class 0.000 description 2
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 description 1
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- CHZLVSBMXZSPNN-UHFFFAOYSA-N 2,4-dimethylbenzenesulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C(C)=C1 CHZLVSBMXZSPNN-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- WXHLLJAMBQLULT-UHFFFAOYSA-N 2-[[6-[4-(2-hydroxyethyl)piperazin-1-yl]-2-methylpyrimidin-4-yl]amino]-n-(2-methyl-6-sulfanylphenyl)-1,3-thiazole-5-carboxamide;hydrate Chemical compound O.C=1C(N2CCN(CCO)CC2)=NC(C)=NC=1NC(S1)=NC=C1C(=O)NC1=C(C)C=CC=C1S WXHLLJAMBQLULT-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical group NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 description 1
- HVBSAKJJOYLTQU-UHFFFAOYSA-N 4-aminobenzenesulfonic acid Chemical compound NC1=CC=C(S(O)(=O)=O)C=C1 HVBSAKJJOYLTQU-UHFFFAOYSA-N 0.000 description 1
- ONMOULMPIIOVTQ-UHFFFAOYSA-N 98-47-5 Chemical compound OS(=O)(=O)C1=CC=CC([N+]([O-])=O)=C1 ONMOULMPIIOVTQ-UHFFFAOYSA-N 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical group [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229950000244 sulfanilic acid Drugs 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008267719A JP4278705B1 (ja) | 2008-01-16 | 2008-10-16 | エッチング液 |
TW097144318A TWI398552B (zh) | 2008-01-16 | 2008-11-17 | Etching solution |
CN2008101877176A CN101487122B (zh) | 2008-01-16 | 2008-12-31 | 蚀刻液 |
KR1020090003344A KR101550069B1 (ko) | 2008-01-16 | 2009-01-15 | 에칭액 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008007327 | 2008-01-16 | ||
JP2008267719A JP4278705B1 (ja) | 2008-01-16 | 2008-10-16 | エッチング液 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP4278705B1 true JP4278705B1 (ja) | 2009-06-17 |
JP2009191357A JP2009191357A (ja) | 2009-08-27 |
Family
ID=40872192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008267719A Active JP4278705B1 (ja) | 2008-01-16 | 2008-10-16 | エッチング液 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4278705B1 (zh) |
KR (1) | KR101550069B1 (zh) |
CN (1) | CN101487122B (zh) |
TW (1) | TWI398552B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104769159A (zh) * | 2012-12-03 | 2015-07-08 | Mec股份有限公司 | 蚀刻液、补给液及铜配线的形成方法 |
CN112055759A (zh) * | 2018-04-24 | 2020-12-08 | 三菱瓦斯化学株式会社 | 铜箔用蚀刻液和使用其的印刷电路板的制造方法以及电解铜层用蚀刻液和使用其的铜柱的制造方法 |
US20220267951A1 (en) * | 2021-02-25 | 2022-08-25 | Sixring Inc. | Modified sulfuric acid and uses thereof |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011124142A (ja) * | 2009-12-11 | 2011-06-23 | Nippon Light Metal Co Ltd | アルミ・樹脂・銅複合品及びその製造方法並びに密閉型電池向け蓋部材 |
WO2011093445A1 (ja) * | 2010-01-28 | 2011-08-04 | 三菱瓦斯化学株式会社 | 銅/チタン系多層薄膜用エッチング液 |
JP5531708B2 (ja) * | 2010-03-26 | 2014-06-25 | メック株式会社 | 銅のエッチング液および基板の製造方法 |
KR101693383B1 (ko) * | 2010-08-12 | 2017-01-09 | 동우 화인켐 주식회사 | 구리와 티타늄을 포함하는 금속막용 식각액 조성물 |
CN102477262B (zh) * | 2010-11-30 | 2015-01-28 | 安集微电子(上海)有限公司 | 一种化学机械抛光浆料 |
CN103510089B (zh) * | 2012-06-29 | 2017-04-12 | 三菱瓦斯化学株式会社 | 蚀刻用液体组合物和使用其的多层印刷电路板的制造方法 |
JP6424559B2 (ja) * | 2013-11-22 | 2018-11-21 | 三菱瓦斯化学株式会社 | エッチング用組成物及びそれを用いたプリント配線板の製造方法 |
JP6164614B2 (ja) * | 2013-12-06 | 2017-07-19 | メック株式会社 | エッチング液、補給液及び銅配線の形成方法 |
CN106167915A (zh) * | 2016-08-30 | 2016-11-30 | 广东成德电子科技股份有限公司 | 一种印制电路板用电化学酸性蚀刻液的再生回收方法 |
CN115404480A (zh) * | 2022-08-30 | 2022-11-29 | 昆山市板明电子科技有限公司 | 可回用的铜面粗化微蚀液及其使用方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000282265A (ja) | 1999-03-31 | 2000-10-10 | Mec Kk | 銅または銅合金のマイクロエッチング剤およびそれを用いる表面処理法 |
JP4033611B2 (ja) | 2000-07-28 | 2008-01-16 | メック株式会社 | 銅または銅合金のマイクロエッチング剤およびそれを用いるマイクロエッチング法 |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP4312582B2 (ja) | 2003-12-02 | 2009-08-12 | 株式会社Adeka | エッチング方法 |
JP4606919B2 (ja) * | 2005-03-28 | 2011-01-05 | 朝日化学工業株式会社 | エッチング組成液 |
TW200714696A (en) | 2005-08-05 | 2007-04-16 | Advanced Tech Materials | High throughput chemical mechanical polishing composition for metal film planarization |
WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
-
2008
- 2008-10-16 JP JP2008267719A patent/JP4278705B1/ja active Active
- 2008-11-17 TW TW097144318A patent/TWI398552B/zh active
- 2008-12-31 CN CN2008101877176A patent/CN101487122B/zh active Active
-
2009
- 2009-01-15 KR KR1020090003344A patent/KR101550069B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104769159A (zh) * | 2012-12-03 | 2015-07-08 | Mec股份有限公司 | 蚀刻液、补给液及铜配线的形成方法 |
CN112055759A (zh) * | 2018-04-24 | 2020-12-08 | 三菱瓦斯化学株式会社 | 铜箔用蚀刻液和使用其的印刷电路板的制造方法以及电解铜层用蚀刻液和使用其的铜柱的制造方法 |
CN112055759B (zh) * | 2018-04-24 | 2021-11-23 | 三菱瓦斯化学株式会社 | 铜箔用蚀刻液和使用其的印刷电路板的制造方法以及电解铜层用蚀刻液和使用其的铜柱的制造方法 |
US20220267951A1 (en) * | 2021-02-25 | 2022-08-25 | Sixring Inc. | Modified sulfuric acid and uses thereof |
Also Published As
Publication number | Publication date |
---|---|
TW200932955A (en) | 2009-08-01 |
CN101487122A (zh) | 2009-07-22 |
KR101550069B1 (ko) | 2015-09-03 |
JP2009191357A (ja) | 2009-08-27 |
CN101487122B (zh) | 2011-04-06 |
KR20090079172A (ko) | 2009-07-21 |
TWI398552B (zh) | 2013-06-11 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |