JP4272142B2 - スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール - Google Patents

スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール Download PDF

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JP4272142B2
JP4272142B2 JP2004353715A JP2004353715A JP4272142B2 JP 4272142 B2 JP4272142 B2 JP 4272142B2 JP 2004353715 A JP2004353715 A JP 2004353715A JP 2004353715 A JP2004353715 A JP 2004353715A JP 4272142 B2 JP4272142 B2 JP 4272142B2
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Prior art keywords
switching element
electrodes
terminal
gate
layer
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Expired - Fee Related
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JP2004353715A
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English (en)
Japanese (ja)
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JP2006165224A5 (https=
JP2006165224A (ja
Inventor
貴史 小川
信一郎 ▲高▼谷
茂樹 小屋
浩幸 ▲高▼澤
伸也 長壁
秋重 中島
靖 重野
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2004353715A priority Critical patent/JP4272142B2/ja
Priority to US11/291,815 priority patent/US20060118951A1/en
Publication of JP2006165224A publication Critical patent/JP2006165224A/ja
Priority to US12/314,644 priority patent/US7783265B2/en
Publication of JP2006165224A5 publication Critical patent/JP2006165224A5/ja
Application granted granted Critical
Publication of JP4272142B2 publication Critical patent/JP4272142B2/ja
Priority to US12/805,409 priority patent/US7899412B2/en
Priority to US12/929,940 priority patent/US8385847B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

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  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Transceivers (AREA)
JP2004353715A 2004-12-07 2004-12-07 スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール Expired - Fee Related JP4272142B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004353715A JP4272142B2 (ja) 2004-12-07 2004-12-07 スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール
US11/291,815 US20060118951A1 (en) 2004-12-07 2005-12-02 Switching element, antenna switch circuit and radio frequency module using the same
US12/314,644 US7783265B2 (en) 2004-12-07 2008-12-15 Switching element, antenna switch circuit and radio frequency module using the same
US12/805,409 US7899412B2 (en) 2004-12-07 2010-07-29 Switching element, antenna switch circuit and radio frequency module using the same
US12/929,940 US8385847B2 (en) 2004-12-07 2011-02-25 Switching element, antenna switch circuit and radio frequency module using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004353715A JP4272142B2 (ja) 2004-12-07 2004-12-07 スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009010870A Division JP2009141379A (ja) 2009-01-21 2009-01-21 スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール
JP2009010867A Division JP2009081474A (ja) 2009-01-21 2009-01-21 スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール

Publications (3)

Publication Number Publication Date
JP2006165224A JP2006165224A (ja) 2006-06-22
JP2006165224A5 JP2006165224A5 (https=) 2009-02-26
JP4272142B2 true JP4272142B2 (ja) 2009-06-03

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JP2004353715A Expired - Fee Related JP4272142B2 (ja) 2004-12-07 2004-12-07 スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール

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Country Link
US (4) US20060118951A1 (https=)
JP (1) JP4272142B2 (https=)

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JP4272142B2 (ja) * 2004-12-07 2009-06-03 株式会社ルネサステクノロジ スイッチング素子並びにそれを用いたアンテナスイッチ回路及び高周波モジュール
JP4684759B2 (ja) * 2005-06-22 2011-05-18 ルネサスエレクトロニクス株式会社 半導体回路装置および高周波電力増幅モジュール
GB2439622B (en) * 2006-06-28 2011-03-30 Filtronic Compound Semiconductors Ltd A linear antenna switch arm
JP4939125B2 (ja) 2006-06-29 2012-05-23 ルネサスエレクトロニクス株式会社 半導体集積回路装置および高周波モジュール
JP2008021949A (ja) * 2006-07-14 2008-01-31 Sony Corp 半導体素子及びこれを備える通信機器
JP5329044B2 (ja) * 2007-01-22 2013-10-30 三菱電機株式会社 電界効果トランジスタ
JP2009027081A (ja) * 2007-07-23 2009-02-05 Hitachi Cable Ltd 半導体集積回路装置及びこれを用いた半導体スイッチ装置
JP5114304B2 (ja) * 2008-06-13 2013-01-09 新日本無線株式会社 半導体スイッチ集積回路
US20100002345A1 (en) * 2008-07-02 2010-01-07 Skyworks Solutions, Inc. Radio frequency switch electrostatic discharge protection circuit
JP5644042B2 (ja) 2008-10-20 2014-12-24 株式会社村田製作所 半導体装置
JP5375307B2 (ja) * 2009-04-23 2013-12-25 株式会社村田製作所 半導体装置
JP2011030110A (ja) * 2009-07-28 2011-02-10 Panasonic Corp 半導体装置およびそれを用いた高周波スイッチ並びに高周波モジュール
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
EP2465141B1 (en) 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
JP4856226B2 (ja) * 2009-09-24 2012-01-18 株式会社東芝 無線端末
KR20130088743A (ko) * 2010-04-13 2013-08-08 갠 시스템즈 인크. 아일랜드 토폴로지를 이용한 고밀도 질화 갈륨 디바이스
US8969973B2 (en) * 2010-07-02 2015-03-03 Win Semiconductors Corp. Multi-gate semiconductor devices
US9171963B2 (en) * 2011-04-11 2015-10-27 University Of Central Florida Research Foundation, Inc. Electrostatic discharge shunting circuit
JP5765143B2 (ja) * 2011-08-30 2015-08-19 株式会社豊田中央研究所 高電子移動度トランジスタとその製造方法
JP6369605B2 (ja) * 2013-05-08 2018-08-08 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
JP2014239201A (ja) * 2013-05-08 2014-12-18 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
JP2015046445A (ja) * 2013-08-27 2015-03-12 富士通株式会社 化合物半導体装置及びその製造方法
WO2016072188A1 (ja) * 2014-11-04 2016-05-12 ソニー株式会社 半導体装置、アンテナスイッチ回路および無線通信装置
US20240038865A1 (en) * 2022-07-26 2024-02-01 Skyworks Solutions, Inc. Multi-gate radio frequency switches

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Also Published As

Publication number Publication date
US20090104881A1 (en) 2009-04-23
US7783265B2 (en) 2010-08-24
US20100297960A1 (en) 2010-11-25
US20110156983A1 (en) 2011-06-30
JP2006165224A (ja) 2006-06-22
US7899412B2 (en) 2011-03-01
US8385847B2 (en) 2013-02-26
US20060118951A1 (en) 2006-06-08

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