JP2012524412A - 帰還抵抗を有するフィールドプレートトランジスタ - Google Patents
帰還抵抗を有するフィールドプレートトランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 description 18
- 230000004888 barrier function Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/153—Feedback used to stabilise the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/61—Indexing scheme relating to amplifiers the cascode amplifier has more than one common gate stage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Amplifiers (AREA)
Abstract
【選択図】図1
Description
本出願は、2009年4月14日出願の「FIELD−PLATED TRANSISTOR INCLUDING FEEDBACK RESISTOR」と題された米国特許非仮出願番号12/423,772号の優先権を主張するものであり、その全体は参照により本明細書に援用される。
Claims (20)
- ソース電極と、入力無線周波数(RF)信号を受信するゲート電極と、増幅されたRF信号を出力するドレイン電極と、を含む単位セルと;
前記ソース電極に連結されたフィールドプレートと;
前記フィールドプレートと前記ソース電極間に連結された帰還抵抗と;
を含むことを特徴とする装置。 - 前記ソース電極は、対地電圧と連結するように構成されることを特徴とする請求項1に記載の装置。
- 前記フィールドプレートは第1のフィールドプレートであり、前記装置はさらに第2のフィールドプレートを含むことを特徴とする請求項1に記載の装置。
- 前記第2のフィールドプレートは、前記ソース電極に連結されることを特徴とする請求項3に記載の装置。
- 前記ソース電極は、対地電圧に連結されるように構成されることを特徴とする請求項4に記載の装置。
- 前記第1のフィールドプレートは、前記ゲート電極の中心からドレインフィンガ側にはずれ、前記第2のフィールドプレートは、前記第1のフィールドプレートの中心から前記ドレインフィンガ側にはずれていることを特徴とする請求項3に記載の装置。
- 前記ソース電極、ゲート電極およびドレイン電極は、トランジスタであって、前記単位セルが、同様に構成され前記トランジスタに対して並列に接続された複数の他のトランジスタを含む前記トランジスタを構成することを特徴とする請求項1に記載の装置。
- 前記トランジスタは、電界効果トランジスター(FET)であることを特徴とする請求項7に記載の装置。
- 前記トランジスタは、高電子移動度トランジスタ(HEMT)、シュードモルフィック高電子移動度トランジスタ(pHEMT)、横方向拡散金属酸化物半導体トランジスタ(LDMOS)および金属エピタキシャル半導体電界効果トランジスタ(MESFET)から構成される群から選択されるFETであることを特徴とする請求項8に記載の装置。
- 前記ゲート電極はT−ゲートであることを特徴とする請求項1に記載の装置。
- 入力無線周波数(RF)信号を受信する第1のトランジスタおよび前記第1のトランジスタとカスコード配置され増幅されたRF信号を出力する第2のトランジスタを含む単位セルと、
前記第1のトランジスタのソース電極と前記第2のトランジスタのゲート電極間に連結された帰還抵抗と、
を含むことを特徴とする回路。 - 前記第1のトランジスタは共通のソーストランジスタであり、前記第2のトランジスタは共通のゲートトランジスタであることを特徴とする請求項11に記載の回路。
- 前記第1のトランジスタのソース電極は、対地電圧に連結されるように構成されることを特徴とする請求項11に記載の回路。
- 前記第1のトランジスタと前記第2のトランジスタ間に連結され、それらとカスコード配置される第3のトランジスタをさらに含むことを特徴とする請求項11に記載の回路。
- 前記帰還抵抗は第1の帰還抵抗であり、前記回路は、前記第1のトランジスタのソース電極と前記第3のトランジスタのゲート電極間に連結された第2の帰還抵抗をさらに含むことを特徴とする請求項14に記載の回路。
- 前記第2のトランジスタに連結される第3のトランジスタであって、前記第2のトランジスタは前記第1のトランジスタと前記第3のトタンジスタ間に連結される第3のトランジスタをさらに含むことを特徴とする請求項11に記載の回路。
- 前記帰還抵抗は第1の帰還抵抗であり、前記回路は、前記第1のトランジスタのソース電極と前記第3のトランジスタのゲート電極間に連結される第2の帰還抵抗をさらに含むことを特徴とする請求項16に記載の回路。
- 無線周波数(RF)入力信号を提供するトランシーバと;
入力無線周波数(RF)信号を受信する第1のトランジスタおよび前記第1のトランジスタとカスコード配置され増幅されたRF信号を出力する第2のトランジスタを含む単位セルと、
前記第1のトランジスタのソース電極と前記第2のトランジスタのゲート電極間に連結された帰還抵抗と、を含む、前記トランシーバに連結された無線周波数(RF)電力増幅器と;
を含むことを特徴とするシステム。 - 前記電力増幅器に連結され、前記増幅されたRF信号の送信を促進するように構成されたアンテナ構造をさらに含みことを特徴とする請求項18に記載のシステム。
- 前記システムは、レーダ装置、衛星通信装置、携帯電話、基地局、放送ラジオまたはテレビ増幅システムであることを特徴とする請求項18に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/423,772 | 2009-04-14 | ||
US12/423,772 US8008977B2 (en) | 2009-04-14 | 2009-04-14 | Field-plated transistor including feedback resistor |
PCT/US2010/030946 WO2010120825A2 (en) | 2009-04-14 | 2010-04-13 | Field-plated transistor including feedback resistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012524412A true JP2012524412A (ja) | 2012-10-11 |
JP5756794B2 JP5756794B2 (ja) | 2015-07-29 |
Family
ID=42933907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012506141A Expired - Fee Related JP5756794B2 (ja) | 2009-04-14 | 2010-04-13 | 帰還抵抗を有するフィールドプレートトランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8008977B2 (ja) |
JP (1) | JP5756794B2 (ja) |
WO (1) | WO2010120825A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5676766B2 (ja) * | 2011-08-22 | 2015-02-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
WO2018154647A1 (ja) * | 2017-02-22 | 2018-08-30 | 三菱電機株式会社 | 高周波増幅器 |
Families Citing this family (12)
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US8936976B2 (en) * | 2009-12-23 | 2015-01-20 | Intel Corporation | Conductivity improvements for III-V semiconductor devices |
IT1401748B1 (it) * | 2010-08-02 | 2013-08-02 | Selex Sistemi Integrati Spa | Transistori ad alta mobilita' elettronica con elettrodo di field plate |
US8778747B2 (en) * | 2011-05-25 | 2014-07-15 | Triquint Semiconductor, Inc. | Regrown Schottky structures for GAN HEMT devices |
JP5804812B2 (ja) * | 2011-07-15 | 2015-11-04 | トランスフォーム・ジャパン株式会社 | 駆動回路および半導体集積回路 |
US10002957B2 (en) | 2011-12-21 | 2018-06-19 | Power Integrations, Inc. | Shield wrap for a heterostructure field effect transistor |
US8928411B2 (en) * | 2012-12-31 | 2015-01-06 | Silicon Image, Inc. | Integration of signal sampling within transistor amplifier stage |
US9484471B2 (en) * | 2014-09-12 | 2016-11-01 | Qorvo Us, Inc. | Compound varactor |
US11171215B2 (en) | 2014-12-18 | 2021-11-09 | Silanna Asia Pte Ltd | Threshold voltage adjustment using adaptively biased shield plate |
US9559199B2 (en) | 2014-12-18 | 2017-01-31 | Silanna Asia Pte Ltd | LDMOS with adaptively biased gate-shield |
US11158624B1 (en) * | 2020-04-24 | 2021-10-26 | Globalfoundries U.S. Inc. | Cascode cell |
US20220321062A1 (en) * | 2021-03-31 | 2022-10-06 | Macom Technology Solutions Holdings, Inc. | High voltage stacked transistor amplifier |
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2009
- 2009-04-14 US US12/423,772 patent/US8008977B2/en not_active Expired - Fee Related
-
2010
- 2010-04-13 JP JP2012506141A patent/JP5756794B2/ja not_active Expired - Fee Related
- 2010-04-13 WO PCT/US2010/030946 patent/WO2010120825A2/en active Application Filing
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JPWO2018154647A1 (ja) * | 2017-02-22 | 2019-11-07 | 三菱電機株式会社 | 高周波増幅器 |
US11025205B2 (en) | 2017-02-22 | 2021-06-01 | Mitsubishi Electric Corporation | High frequency amplifier |
Also Published As
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JP5756794B2 (ja) | 2015-07-29 |
WO2010120825A3 (en) | 2011-01-20 |
US8008977B2 (en) | 2011-08-30 |
WO2010120825A2 (en) | 2010-10-21 |
US20100259329A1 (en) | 2010-10-14 |
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