IT1401748B1 - Transistori ad alta mobilita' elettronica con elettrodo di field plate - Google Patents

Transistori ad alta mobilita' elettronica con elettrodo di field plate

Info

Publication number
IT1401748B1
IT1401748B1 ITTO2010A000670A ITTO20100670A IT1401748B1 IT 1401748 B1 IT1401748 B1 IT 1401748B1 IT TO2010A000670 A ITTO2010A000670 A IT TO2010A000670A IT TO20100670 A ITTO20100670 A IT TO20100670A IT 1401748 B1 IT1401748 B1 IT 1401748B1
Authority
IT
Italy
Prior art keywords
field plate
plate electrode
electronic transistors
mobility electronic
mobility
Prior art date
Application number
ITTO2010A000670A
Other languages
English (en)
Inventor
Paolo Romanini
Marco Peroni
Original Assignee
Selex Sistemi Integrati Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Selex Sistemi Integrati Spa filed Critical Selex Sistemi Integrati Spa
Priority to ITTO2010A000670A priority Critical patent/IT1401748B1/it
Priority to PCT/IB2011/053439 priority patent/WO2012017390A1/en
Priority to EP11760849.7A priority patent/EP2601680B1/en
Priority to US13/813,337 priority patent/US9577064B2/en
Publication of ITTO20100670A1 publication Critical patent/ITTO20100670A1/it
Application granted granted Critical
Publication of IT1401748B1 publication Critical patent/IT1401748B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
ITTO2010A000670A 2010-08-02 2010-08-02 Transistori ad alta mobilita' elettronica con elettrodo di field plate IT1401748B1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
ITTO2010A000670A IT1401748B1 (it) 2010-08-02 2010-08-02 Transistori ad alta mobilita' elettronica con elettrodo di field plate
PCT/IB2011/053439 WO2012017390A1 (en) 2010-08-02 2011-08-02 High electron mobility transistors with field plate electrode
EP11760849.7A EP2601680B1 (en) 2010-08-02 2011-08-02 High electron mobility transistors with field plate electrode
US13/813,337 US9577064B2 (en) 2010-08-02 2011-08-02 High electron mobility transistors with field plate electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2010A000670A IT1401748B1 (it) 2010-08-02 2010-08-02 Transistori ad alta mobilita' elettronica con elettrodo di field plate

Publications (2)

Publication Number Publication Date
ITTO20100670A1 ITTO20100670A1 (it) 2012-02-03
IT1401748B1 true IT1401748B1 (it) 2013-08-02

Family

ID=43589507

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2010A000670A IT1401748B1 (it) 2010-08-02 2010-08-02 Transistori ad alta mobilita' elettronica con elettrodo di field plate

Country Status (4)

Country Link
US (1) US9577064B2 (it)
EP (1) EP2601680B1 (it)
IT (1) IT1401748B1 (it)
WO (1) WO2012017390A1 (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6075003B2 (ja) * 2012-10-22 2017-02-08 富士通株式会社 トランジスタの制御回路及び電源装置
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
CN104409482B (zh) * 2014-11-18 2017-02-22 西安电子科技大学 GaN基T形源场板功率器件及其制作方法
US10756084B2 (en) * 2015-03-26 2020-08-25 Wen-Jang Jiang Group-III nitride semiconductor device and method for fabricating the same
FR3045939B1 (fr) * 2015-12-22 2018-03-30 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de collage direct entre deux structures
CN105931999B (zh) * 2016-04-22 2018-06-26 西安电子科技大学 薄势垒增强型AlGaN/GaN高电子迁移率晶体管及其制作方法
CN105762184A (zh) * 2016-04-27 2016-07-13 电子科技大学 一种具有半绝缘层的氮化镓基高电子迁移率晶体管
CN106298909A (zh) * 2016-08-09 2017-01-04 电子科技大学 一种hemt器件
CN107395177B (zh) * 2017-07-10 2020-05-19 东南大学 面向物联网的具有自供电功能的mesfet管放大器
CN110690281B (zh) * 2018-07-05 2023-08-08 苏州捷芯威半导体有限公司 半导体器件及制造方法
WO2020070831A1 (ja) * 2018-10-03 2020-04-09 三菱電機株式会社 電界効果トランジスタ
WO2020214227A2 (en) 2019-04-04 2020-10-22 Hrl Laboratories, Llc Miniature field plate t-gate and method of fabricating the same
CN115668506A (zh) * 2020-05-25 2023-01-31 索尼半导体解决方案公司 半导体装置、半导体模块和电子设备
CN113253489A (zh) * 2021-05-28 2021-08-13 重庆邮电大学 一种太赫兹多通道调制器及其制备方法
CN113594248B (zh) * 2021-08-02 2023-04-25 电子科技大学 一种具有集成续流二极管的双异质结GaN HEMT器件
CN113809174B (zh) * 2021-11-16 2022-03-11 深圳市时代速信科技有限公司 一种半导体器件及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69321184T2 (de) 1992-08-19 1999-05-20 Mitsubishi Electric Corp Verfahren zur Herstellung eines Feldeffekttransistors
US6984853B2 (en) * 2004-02-26 2006-01-10 Agilent Technologies, Inc Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection
WO2007109301A2 (en) * 2006-03-20 2007-09-27 International Rectifier Corporation Merged gate cascode transistor
JP5072862B2 (ja) 2006-12-07 2012-11-14 株式会社東芝 半導体装置及び半導体装置の製造方法
JP5358882B2 (ja) * 2007-02-09 2013-12-04 サンケン電気株式会社 整流素子を含む複合半導体装置
WO2008101989A1 (de) * 2007-02-22 2008-08-28 Forschungsverbund Berlin E.V. Halbleiterbauelement und verfahren zu dessen herstellung
JP4695622B2 (ja) * 2007-05-02 2011-06-08 株式会社東芝 半導体装置
WO2009038809A1 (en) * 2007-09-20 2009-03-26 International Rectifier Corporation Enhancement mode iii-nitride semiconductor device with reduced electric field between the gate and the drain
JP5487615B2 (ja) * 2008-12-24 2014-05-07 サンケン電気株式会社 電界効果半導体装置及びその製造方法
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor

Also Published As

Publication number Publication date
EP2601680A1 (en) 2013-06-12
US9577064B2 (en) 2017-02-21
WO2012017390A1 (en) 2012-02-09
EP2601680B1 (en) 2015-06-24
US20130193487A1 (en) 2013-08-01
ITTO20100670A1 (it) 2012-02-03

Similar Documents

Publication Publication Date Title
IT1401748B1 (it) Transistori ad alta mobilita' elettronica con elettrodo di field plate
IT1401747B1 (it) Fabbricazione di transistori ad alta mobilita' elettronica con elettrodo di controllo a lunghezza scalabile
GB2497258B (en) Nanowire field effect transistors
UA22023S (uk) Електронний медіа пристрій
BR112013010226A2 (pt) "conversor eletrônico de potência "
BR112013001600A2 (pt) ''conversor eletrônico de potência''
IT1399631B1 (it) Dispositivo di chiusura "push-pull"
FI20070063A0 (fi) Orgaaninen kenttävaikutustransistori
BR112013011388A2 (pt) ''isolante de onda eletromagnética''
IT1403475B1 (it) Struttura di connessione per un circuito integrato con funzione capacitiva
BR112013010141A2 (pt) aparelho eletrônico
BR112012028888A2 (pt) antenna having planar conducting elements
BR112014020364A2 (pt) Varredura e publicidade sem fio em plano de fundo de dispositivos eletrõnicos
DE102007034802B8 (de) Lateraler Hochvolt-MOS-Transistor mit RESURF-Struktur
BRPI1012253A2 (pt) "conjunto de alta voltagem"
FR2967329B1 (fr) Ecran d'affichage
BRPI1009767A2 (pt) "transformador de alta tensão"
DK2366847T3 (da) Isolerings- og afløbsplade
BR112013010223A2 (pt) "piranosidade temperatura- estável"
BR112013011925A2 (pt) estrutura de conexão de dispositivos eletrônicos
IT1400116B1 (it) Composizione fotoattiva ad elevata mobilita' delle lacune elettroniche.
DE112010001457A5 (de) Betriebsmittel mit integrierter Kühlplatte
BRPI1011817A2 (pt) "distribuição de alta voltagem"
IT1404382B1 (it) Dispositivo elettronico per applicazioni ad elevata potenza.
BR212013013178U2 (pt) caneta eletrônica com supercapacitor