JP6075003B2 - トランジスタの制御回路及び電源装置 - Google Patents
トランジスタの制御回路及び電源装置 Download PDFInfo
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- JP6075003B2 JP6075003B2 JP2012232757A JP2012232757A JP6075003B2 JP 6075003 B2 JP6075003 B2 JP 6075003B2 JP 2012232757 A JP2012232757 A JP 2012232757A JP 2012232757 A JP2012232757 A JP 2012232757A JP 6075003 B2 JP6075003 B2 JP 6075003B2
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- voltage
- electrode
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- circuit
- hemt
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- 239000004065 semiconductor Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 6
- 239000010410 layer Substances 0.000 description 20
- 230000005533 two-dimensional electron gas Effects 0.000 description 11
- 230000007423 decrease Effects 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000003574 free electron Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010893 electron trap Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Junction Field-Effect Transistors (AREA)
- Dc-Dc Converters (AREA)
- Electronic Switches (AREA)
Description
本発明は、高電子移動度トランジスタの制御回路及び電源装置に関する。
20 ゲート制御回路
30 GaN−HEMT
40 フィールドプレート
42 ソース電極用パッド
46 ゲートフィールドプレート
44 ドレイン電極用パッド
50 比較電圧生成回路
60 ドレイン電圧判定回路
70 FP電圧制御回路
81 ソース電極
82 ドレイン電極
83 ゲート電極
85、86 コンタクトプラグ
90 SiC基板
91 AlN層
92 i−GaN層
93 二次元電子ガス
94 n−AlGaN層
95 層間絶縁膜
200 交流電源
210 整流回路
220 PFC回路
260 DC−DCコンバータ
270 負荷回路
Claims (4)
- ゲートフィールドプレートを有するゲート電極と、ドレイン電極と、前記ゲート電極−前記ドレイン電極間に設けられた制御電極を有する窒化ガリウム(GaN)−HEMTと、
前記ドレイン電極の電圧を基準電圧と比較する比較回路と、
前記比較回路からの比較結果に基づいて、前記制御電極に正の電位を印加する電極制御回路と
を含み、
前記電極制御回路は、第1の正の電位と、前記第1の正の電位より高い第2の正の電位を前記制御電極に印加する
ことを特徴とする窒化ガリウム(GaN)−HEMTの制御回路。 - 前記比較回路は、
前記ドレイン電圧を分圧する分圧回路と、
複数の比較電圧を生成する比較電圧生成回路と、
前記分圧回路で分圧されたドレイン電圧と、前記複数の比較電圧とを比較する比較回路と
を含むことを特徴とする請求項1記載の窒化ガリウム(GaN)−HEMTの制御回路。 - 前記窒化ガリウム(GaN)−HEMTが窒素を含む化合物半導体で構成されている
ことを特徴とする請求項1記載の窒化ガリウム(GaN)−HEMTの制御回路。 - DC−DCコンバータと前記DC−DCコンバータへ電力を供給する電源回路とを有する電源装置であって、
ゲートフィールドプレートを有するゲート電極と、ドレイン電極と、前記ゲート電極−前記ドレイン電極間に設けられた制御電極とを有する窒化ガリウム(GaN)−HEMTと、
前記ドレイン電極の電圧を基準電圧と比較する比較回路と、
前記比較回路からの比較結果に基づいて、前記制御電極に正の電位を印加する電極制御回路と
を含み、
前記電極制御回路は、第1の正の電位と、前記第1の正の電位より高い第2の正の電位を前記制御電極に印加する
ことを特徴とする電源装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012232757A JP6075003B2 (ja) | 2012-10-22 | 2012-10-22 | トランジスタの制御回路及び電源装置 |
TW102128491A TWI531161B (zh) | 2012-10-22 | 2013-08-08 | 電晶體控制電路與電力供應裝置 |
US13/966,693 US9077336B2 (en) | 2012-10-22 | 2013-08-14 | Transistor control circuit and power supply device |
CN201310369671.0A CN103780061B (zh) | 2012-10-22 | 2013-08-22 | 晶体管控制电路和电源装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2012232757A JP6075003B2 (ja) | 2012-10-22 | 2012-10-22 | トランジスタの制御回路及び電源装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014086491A JP2014086491A (ja) | 2014-05-12 |
JP6075003B2 true JP6075003B2 (ja) | 2017-02-08 |
Family
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JP2012232757A Active JP6075003B2 (ja) | 2012-10-22 | 2012-10-22 | トランジスタの制御回路及び電源装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9077336B2 (ja) |
JP (1) | JP6075003B2 (ja) |
CN (1) | CN103780061B (ja) |
TW (1) | TWI531161B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013027722A1 (ja) * | 2011-08-22 | 2013-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102038625B1 (ko) * | 2013-02-26 | 2019-10-30 | 삼성전자주식회사 | 고전자이동도 트랜지스터의 게이트전압 조절 방법 및 장치 |
JP6363542B2 (ja) * | 2015-03-17 | 2018-07-25 | 株式会社日立製作所 | 半導体装置、半導体装置の製造方法および回路システム |
JP2017005139A (ja) * | 2015-06-11 | 2017-01-05 | 三菱電機株式会社 | トランジスタ |
TWI626742B (zh) | 2015-06-18 | 2018-06-11 | 台達電子工業股份有限公司 | 半導體裝置 |
US9991225B2 (en) * | 2015-06-23 | 2018-06-05 | Texas Instruments Incorporated | High voltage device with multi-electrode control |
DE102015221376A1 (de) * | 2015-11-02 | 2017-05-04 | Robert Bosch Gmbh | Halbleiterbauelement sowie Verfahren zur Herstellung eines Halbleiterbauelements und Steuergerät für ein Fahrzeug |
KR101873219B1 (ko) | 2017-06-05 | 2018-07-02 | 홍익대학교 산학협력단 | 질화갈륨계 전력 스위칭 장치 |
JP7108386B2 (ja) * | 2017-08-24 | 2022-07-28 | 住友化学株式会社 | 電荷トラップ評価方法 |
CN113467565A (zh) | 2021-07-08 | 2021-10-01 | 海宁奕斯伟集成电路设计有限公司 | 驱动系统、驱动方法、计算机系统和可读介质 |
Family Cites Families (24)
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JPH0974347A (ja) * | 1995-06-26 | 1997-03-18 | Mitsubishi Electric Corp | Mos集積回路 |
US5831472A (en) * | 1997-03-31 | 1998-11-03 | Adaptec, Inc. | Integrated circuit design for single ended receiver margin tracking |
JP3111985B2 (ja) * | 1998-06-16 | 2000-11-27 | 日本電気株式会社 | 電界効果型トランジスタ |
JP3540231B2 (ja) * | 2000-01-31 | 2004-07-07 | 沖電気工業株式会社 | クランプ回路及び非接触式通信用インターフェース回路 |
US6201375B1 (en) * | 2000-04-28 | 2001-03-13 | Burr-Brown Corporation | Overvoltage sensing and correction circuitry and method for low dropout voltage regulator |
DE10248498A1 (de) * | 2002-10-17 | 2004-05-06 | Infineon Technologies Ag | Schaltungsanordnung zur Spannungsregelung |
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JP4385205B2 (ja) * | 2002-12-16 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
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WO2013027722A1 (ja) * | 2011-08-22 | 2013-02-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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2012
- 2012-10-22 JP JP2012232757A patent/JP6075003B2/ja active Active
-
2013
- 2013-08-08 TW TW102128491A patent/TWI531161B/zh active
- 2013-08-14 US US13/966,693 patent/US9077336B2/en active Active
- 2013-08-22 CN CN201310369671.0A patent/CN103780061B/zh active Active
Also Published As
Publication number | Publication date |
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US9077336B2 (en) | 2015-07-07 |
US20140111268A1 (en) | 2014-04-24 |
TWI531161B (zh) | 2016-04-21 |
CN103780061A (zh) | 2014-05-07 |
TW201417498A (zh) | 2014-05-01 |
JP2014086491A (ja) | 2014-05-12 |
CN103780061B (zh) | 2016-05-25 |
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