JP5811800B2 - 制御回路及び電子機器 - Google Patents
制御回路及び電子機器 Download PDFInfo
- Publication number
- JP5811800B2 JP5811800B2 JP2011253321A JP2011253321A JP5811800B2 JP 5811800 B2 JP5811800 B2 JP 5811800B2 JP 2011253321 A JP2011253321 A JP 2011253321A JP 2011253321 A JP2011253321 A JP 2011253321A JP 5811800 B2 JP5811800 B2 JP 5811800B2
- Authority
- JP
- Japan
- Prior art keywords
- switching element
- gate
- voltage
- pwm signal
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 11
- 238000001514 detection method Methods 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 14
- 238000011084 recovery Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Power Conversion In General (AREA)
Description
3A、3B 出力端子
10 降圧型コンバータ
20 PWM信号発生回路
30 ゲート制御回路
50 突入電流防止回路
80 ゲート
81 ソース
82 ドレイン
90 基板
91 GaN層
92 AlGaN層
93 二次元電子ガス層
94 n−GaN層
95 ゲート絶縁膜
Claims (10)
- ソース、ゲート及びドレインを有する第1のスイッチング素子と、
第2のスイッチング素子を介して前記ゲートに電圧を供給するバッテリーと、
第3のスイッチング素子を介して前記ゲートにPWM信号を供給するPWM信号発生回路と、
電源がオフの状態で、前記第2のスイッチング素子をオンして前記ゲートに前記バッテリーの電圧を供給すると共に、前記第3のスイッチング素子をオフし、電源がオンの状態で、前記第3のスイッチング素子をオンして前記ゲートに前記PWM信号を供給すると共に、前記第2のスイッチング素子をオフするゲート制御回路と
を有することを特徴とする制御回路。 - 前記第1のスイッチング素子は、ノーマリーオンからノーマリーオフ化されたGaN−HEMTである
ことを特徴とする請求項1に記載の制御回路。 - 前記バッテリーの電圧は、前記ノーマリーオフ化されたGaN−HEMTの閾値よりも大きい電圧である
ことを特徴とする請求項2に記載の制御回路。 - さらに、前記バッテリーの電圧を比較する検出回路を有し、
該検出回路は、前記バッテリーの電圧が前記ノーマリーオフ化されたGaN−HEMTの閾値より低い場合は、電源をオフする
ことを特徴とする請求項3に記載の制御回路。 - さらに、前記第1のスイッチング素子の閾値を測定する閾値測定回路を有し、
該閾値測定回路は、前記第1のスイッチング素子の閾値が所定の電圧より低い場合は、電源をオフする
ことを特徴とする請求項1に記載の制御回路。 - 前記PWM信号発生回路は、第1の周波数の第1のPWM信号と、前記第1の周波数よりも遅い第2の周波数の第2のPWM信号を出力する
ことを特徴とする請求項1に記載の制御回路。 - さらに、前記第1のスイッチング素子の閾値を測定する閾値測定回路を有し、
該閾値測定回路は、前記第1のスイッチング素子の閾値が所定の電圧より低い場合は、前記ゲートに前記第2のPWM信号を供給し、前記第1のスイッチング素子の閾値が所定の電圧より高くなった場合は、前記ゲートに前記第1のPWM信号を供給する
ことを特徴とする請求項6に記載の制御回路。 - 前記第2のスイッチング素子は、PMOS−FETであり、
前記第3のスイッチング素子は、NMOS−FETである
ことを特徴とする請求項1に記載の制御回路。 - さらに、前記第1のスイッチング素子のドレイン側に突入電流防止回路を有し、
該突入電流防止回路は、直列に接続されたトライアックと抵抗、及び前記トライアックと前記抵抗に並列に接続されたリレーを有する
ことを特徴とする請求項1に記載の制御回路。 - ソース、ゲート及びドレインを有する第1のスイッチング素子を含むコンバータ回路と、
第2のスイッチング素子を介して前記ゲートに電圧を供給するバッテリーと、
第3のスイッチング素子を介して前記ゲートにPWM信号を供給するPWM信号発生回路と、
電源がオフの状態で、前記第2のスイッチング素子をオンして前記ゲートに前記バッテリーの電圧を供給すると共に、前記第3のスイッチング素子をオフし、電源がオンの状態で、前記第3のスイッチング素子をオンして前記ゲートに前記PWM信号を供給すると共に、前記第2のスイッチング素子をオフするゲート制御回路と
を有することを特徴とする電子機器。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011253321A JP5811800B2 (ja) | 2011-11-18 | 2011-11-18 | 制御回路及び電子機器 |
US13/624,122 US8698547B2 (en) | 2011-11-18 | 2012-09-21 | Control circuit and electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011253321A JP5811800B2 (ja) | 2011-11-18 | 2011-11-18 | 制御回路及び電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013110831A JP2013110831A (ja) | 2013-06-06 |
JP5811800B2 true JP5811800B2 (ja) | 2015-11-11 |
Family
ID=48426185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011253321A Expired - Fee Related JP5811800B2 (ja) | 2011-11-18 | 2011-11-18 | 制御回路及び電子機器 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8698547B2 (ja) |
JP (1) | JP5811800B2 (ja) |
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US20160216304A1 (en) | 2015-01-28 | 2016-07-28 | Lockheed Martin Corporation | Rapid high-resolution magnetic field measurements for power line inspection |
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2011
- 2011-11-18 JP JP2011253321A patent/JP5811800B2/ja not_active Expired - Fee Related
-
2012
- 2012-09-21 US US13/624,122 patent/US8698547B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8698547B2 (en) | 2014-04-15 |
JP2013110831A (ja) | 2013-06-06 |
US20130127518A1 (en) | 2013-05-23 |
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