JP4255847B2 - 金属ペーストを用いた半導体ウェハーへのバンプの形成方法 - Google Patents

金属ペーストを用いた半導体ウェハーへのバンプの形成方法 Download PDF

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Publication number
JP4255847B2
JP4255847B2 JP2004018102A JP2004018102A JP4255847B2 JP 4255847 B2 JP4255847 B2 JP 4255847B2 JP 2004018102 A JP2004018102 A JP 2004018102A JP 2004018102 A JP2004018102 A JP 2004018102A JP 4255847 B2 JP4255847 B2 JP 4255847B2
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JP
Japan
Prior art keywords
semiconductor wafer
metal paste
powder
metal
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004018102A
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English (en)
Japanese (ja)
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JP2005216508A5 (https=
JP2005216508A (ja
Inventor
俊典 小柏
正幸 宮入
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
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Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP2004018102A priority Critical patent/JP4255847B2/ja
Publication of JP2005216508A publication Critical patent/JP2005216508A/ja
Publication of JP2005216508A5 publication Critical patent/JP2005216508A5/ja
Application granted granted Critical
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Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01261—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/225—Bumps having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics

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  • Conductive Materials (AREA)
JP2004018102A 2004-01-27 2004-01-27 金属ペーストを用いた半導体ウェハーへのバンプの形成方法 Expired - Lifetime JP4255847B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004018102A JP4255847B2 (ja) 2004-01-27 2004-01-27 金属ペーストを用いた半導体ウェハーへのバンプの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004018102A JP4255847B2 (ja) 2004-01-27 2004-01-27 金属ペーストを用いた半導体ウェハーへのバンプの形成方法

Publications (3)

Publication Number Publication Date
JP2005216508A JP2005216508A (ja) 2005-08-11
JP2005216508A5 JP2005216508A5 (https=) 2006-03-09
JP4255847B2 true JP4255847B2 (ja) 2009-04-15

Family

ID=34902707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004018102A Expired - Lifetime JP4255847B2 (ja) 2004-01-27 2004-01-27 金属ペーストを用いた半導体ウェハーへのバンプの形成方法

Country Status (1)

Country Link
JP (1) JP4255847B2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7766218B2 (en) 2005-09-21 2010-08-03 Nihon Handa Co., Ltd. Pasty silver particle composition, process for producing solid silver, solid silver, joining method, and process for producing printed wiring board
JP4770643B2 (ja) 2005-10-12 2011-09-14 エプソントヨコム株式会社 圧電デバイス及び、その製造方法
EP2012352A4 (en) * 2006-04-24 2012-07-25 Murata Manufacturing Co ELECTRONIC COMPONENT, ELECTRONIC COMPONENT DEVICE THEREFOR AND METHOD OF MANUFACTURING THEREOF
JP4638382B2 (ja) * 2006-06-05 2011-02-23 田中貴金属工業株式会社 接合方法
JP5065718B2 (ja) * 2006-06-20 2012-11-07 田中貴金属工業株式会社 圧電素子の気密封止方法、及び、圧電デバイスの製造方法
WO2008114784A1 (ja) 2007-03-22 2008-09-25 Tanaka Kikinzoku Kogyo K. K. 封止用の金属ペースト及び圧電素子の気密封止方法並びに圧電デバイス
JP5119866B2 (ja) * 2007-03-22 2013-01-16 セイコーエプソン株式会社 水晶デバイス及びその封止方法
US8069549B2 (en) 2007-03-22 2011-12-06 Seiko Epson Corporation Method for sealing a quartz crystal device
JP2009200675A (ja) * 2008-02-20 2009-09-03 Epson Toyocom Corp 圧電デバイス及び圧電デバイスの製造方法
JP5363839B2 (ja) * 2008-05-12 2013-12-11 田中貴金属工業株式会社 バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法
JP5076166B2 (ja) * 2008-05-16 2012-11-21 セイコーエプソン株式会社 圧電デバイス及びその封止方法
US10046418B2 (en) 2010-03-18 2018-08-14 Furukawa Electric Co., Ltd. Electrically conductive paste, and electrically conducive connection member produced using the paste
US10177079B2 (en) 2010-03-19 2019-01-08 Furukawa Electric Co., Ltd. Conductive connecting member and manufacturing method of same
JP5520097B2 (ja) 2010-03-23 2014-06-11 富士フイルム株式会社 微小構造体の製造方法
US9539671B2 (en) 2010-10-08 2017-01-10 Tanaka Kikinzoku K.K. Precious metal paste for bonding semiconductor element
JP4859996B1 (ja) * 2010-11-26 2012-01-25 田中貴金属工業株式会社 金属配線形成用の転写基板による金属配線の形成方法
JP5202714B1 (ja) 2011-11-18 2013-06-05 田中貴金属工業株式会社 金属配線形成用の転写基板及び前記転写用基板による金属配線の形成方法
JP6049121B2 (ja) * 2012-01-10 2016-12-21 有限会社 ナプラ 機能性材料、電子デバイス、電磁波吸収／遮蔽デバイス及びそれらの製造方法
JP5978840B2 (ja) * 2012-08-02 2016-08-24 住友金属鉱山株式会社 銀粉及びその製造方法、並びに銀ペースト
JP2016093830A (ja) * 2014-11-14 2016-05-26 千住金属工業株式会社 無残渣型継手形成用Ａｇナノペースト
TW202541302A (zh) * 2019-02-04 2025-10-16 日商索尼半導體解決方案公司 電子裝置
US20230005870A1 (en) * 2021-07-01 2023-01-05 Macom Technology Solutions Holdings, Inc. 3d printed interconnects and resonators for semiconductor devices

Also Published As

Publication number Publication date
JP2005216508A (ja) 2005-08-11

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