JP4253088B2 - 反射防止膜組成物およびその準備方法、ならびに反射防止膜およびその形成方法 - Google Patents

反射防止膜組成物およびその準備方法、ならびに反射防止膜およびその形成方法 Download PDF

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Publication number
JP4253088B2
JP4253088B2 JP28983199A JP28983199A JP4253088B2 JP 4253088 B2 JP4253088 B2 JP 4253088B2 JP 28983199 A JP28983199 A JP 28983199A JP 28983199 A JP28983199 A JP 28983199A JP 4253088 B2 JP4253088 B2 JP 4253088B2
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general formula
following general
acid
fluorene
group
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Japanese (ja)
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JP2000204115A (ja
Inventor
ソンウン ホン
ミンホ チョン
ヒョンス キム
キホ ペク
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SK Hynix Inc
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Hynix Semiconductor Inc
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • C08F8/34Introducing sulfur atoms or sulfur-containing groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16Halogens
    • C08F212/20Fluorine
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
JP28983199A 1998-12-31 1999-10-12 反射防止膜組成物およびその準備方法、ならびに反射防止膜およびその形成方法 Expired - Fee Related JP4253088B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR98-63695 1998-12-31
KR10-1998-0063695A KR100363695B1 (ko) 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007042141A Division JP2007231270A (ja) 1998-12-31 2007-02-22 有機反射防止膜用重合体、その製造方法および半導体装置

Publications (2)

Publication Number Publication Date
JP2000204115A JP2000204115A (ja) 2000-07-25
JP4253088B2 true JP4253088B2 (ja) 2009-04-08

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JP28983199A Expired - Fee Related JP4253088B2 (ja) 1998-12-31 1999-10-12 反射防止膜組成物およびその準備方法、ならびに反射防止膜およびその形成方法
JP2007042141A Withdrawn JP2007231270A (ja) 1998-12-31 2007-02-22 有機反射防止膜用重合体、その製造方法および半導体装置

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JP2007042141A Withdrawn JP2007231270A (ja) 1998-12-31 2007-02-22 有機反射防止膜用重合体、その製造方法および半導体装置

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US (2) US6350818B1 (US06492441-20021210-C00025.png)
JP (2) JP4253088B2 (US06492441-20021210-C00025.png)
KR (1) KR100363695B1 (US06492441-20021210-C00025.png)
CN (1) CN1166704C (US06492441-20021210-C00025.png)
DE (1) DE19940320B4 (US06492441-20021210-C00025.png)
FR (1) FR2788060B1 (US06492441-20021210-C00025.png)
GB (1) GB2345289B (US06492441-20021210-C00025.png)
IT (1) IT1308658B1 (US06492441-20021210-C00025.png)
NL (1) NL1012840C2 (US06492441-20021210-C00025.png)
TW (1) TWI227259B (US06492441-20021210-C00025.png)

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Also Published As

Publication number Publication date
NL1012840A1 (nl) 2000-07-03
US20020120070A1 (en) 2002-08-29
DE19940320B4 (de) 2006-09-21
JP2000204115A (ja) 2000-07-25
CN1166704C (zh) 2004-09-15
CN1260355A (zh) 2000-07-19
IT1308658B1 (it) 2002-01-09
DE19940320A1 (de) 2000-07-06
KR100363695B1 (ko) 2003-04-11
GB2345289A (en) 2000-07-05
FR2788060A1 (fr) 2000-07-07
ITTO991027A0 (it) 1999-11-24
US6350818B1 (en) 2002-02-26
JP2007231270A (ja) 2007-09-13
ITTO991027A1 (it) 2001-05-24
FR2788060B1 (fr) 2003-10-17
GB9917218D0 (en) 1999-09-22
US6492441B2 (en) 2002-12-10
TWI227259B (en) 2005-02-01
NL1012840C2 (nl) 2001-06-07
GB2345289B (en) 2003-03-26
KR20010016643A (ko) 2001-03-05

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