JP4249810B2 - 染色されたフォトレジストとその方法及びそれからなる工業製品 - Google Patents

染色されたフォトレジストとその方法及びそれからなる工業製品 Download PDF

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Publication number
JP4249810B2
JP4249810B2 JP30776297A JP30776297A JP4249810B2 JP 4249810 B2 JP4249810 B2 JP 4249810B2 JP 30776297 A JP30776297 A JP 30776297A JP 30776297 A JP30776297 A JP 30776297A JP 4249810 B2 JP4249810 B2 JP 4249810B2
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JP
Japan
Prior art keywords
photoresist
forming
relief image
group
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP30776297A
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English (en)
Japanese (ja)
Other versions
JPH10186647A (ja
JPH10186647A5 (enExample
Inventor
マイケル モリ ジェイムズ
ダブリュー サックレー ジェームズ
エフ シンタ ロジャー
ベル ローズマリー
エル ミラー=ファーフェイ ロビン
ジー アダムス ティモシー
エム ザイドウスキイ トーマス
ケイ パベルチェク エドワード
ドカント マニュエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JPH10186647A publication Critical patent/JPH10186647A/ja
Publication of JPH10186647A5 publication Critical patent/JPH10186647A5/ja
Application granted granted Critical
Publication of JP4249810B2 publication Critical patent/JP4249810B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/127Spectral sensitizer containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP30776297A 1996-10-07 1997-10-06 染色されたフォトレジストとその方法及びそれからなる工業製品 Expired - Lifetime JP4249810B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US726613 1996-10-07
US08/726,613 US7147983B1 (en) 1996-10-07 1996-10-07 Dyed photoresists and methods and articles of manufacture comprising same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006290286A Division JP4250182B2 (ja) 1996-10-07 2006-10-25 染色されたフォトレジストとその方法及びそれからなる工業製品

Publications (3)

Publication Number Publication Date
JPH10186647A JPH10186647A (ja) 1998-07-14
JPH10186647A5 JPH10186647A5 (enExample) 2006-12-14
JP4249810B2 true JP4249810B2 (ja) 2009-04-08

Family

ID=24919313

Family Applications (2)

Application Number Title Priority Date Filing Date
JP30776297A Expired - Lifetime JP4249810B2 (ja) 1996-10-07 1997-10-06 染色されたフォトレジストとその方法及びそれからなる工業製品
JP2006290286A Expired - Lifetime JP4250182B2 (ja) 1996-10-07 2006-10-25 染色されたフォトレジストとその方法及びそれからなる工業製品

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006290286A Expired - Lifetime JP4250182B2 (ja) 1996-10-07 2006-10-25 染色されたフォトレジストとその方法及びそれからなる工業製品

Country Status (4)

Country Link
US (3) US7147983B1 (enExample)
EP (1) EP0834770B1 (enExample)
JP (2) JP4249810B2 (enExample)
DE (1) DE69726378T2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5976770A (en) * 1998-01-15 1999-11-02 Shipley Company, L.L.C. Dyed photoresists and methods and articles of manufacture comprising same
KR100395904B1 (ko) * 1999-04-23 2003-08-27 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100310252B1 (ko) * 1999-06-22 2001-11-14 박종섭 유기 반사방지 중합체 및 그의 제조방법
KR100533379B1 (ko) * 1999-09-07 2005-12-06 주식회사 하이닉스반도체 유기 난반사 방지막용 조성물과 이의 제조방법
KR100549574B1 (ko) 1999-12-30 2006-02-08 주식회사 하이닉스반도체 유기 반사 방지막용 중합체 및 그의 제조방법
KR100734249B1 (ko) * 2000-09-07 2007-07-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
JP3712048B2 (ja) * 2000-09-27 2005-11-02 信越化学工業株式会社 レジスト材料
TW588072B (en) * 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
KR20020090584A (ko) * 2001-05-28 2002-12-05 주식회사 동진쎄미켐 유기 반사 방지막용 고분자 수지, 및 이를 이용하는KrF 포토레지스트용 유기 반사 방지막 조성물
GR1004163B (el) * 2001-11-01 2003-02-21 Πολυκυκλικα παραγωγα τροποποιησης των οπτικων ιδιοτητων και των ιδιοτητων αντοχης στο πλασμα των πολυμερων λιθογραφιας
JP4393861B2 (ja) * 2003-03-14 2010-01-06 東京応化工業株式会社 磁性膜のパターン形成方法
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
JP4762630B2 (ja) * 2005-08-03 2011-08-31 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
KR100688594B1 (ko) * 2006-10-26 2007-03-02 삼성전자주식회사 축합환의 방향족 환을 포함하는 보호기를 가지는 감광성폴리머 및 이를 포함하는 레지스트 조성물
US7592118B2 (en) 2007-03-27 2009-09-22 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP4982228B2 (ja) 2007-03-30 2012-07-25 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4905250B2 (ja) * 2007-05-18 2012-03-28 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR100871770B1 (ko) 2007-09-12 2008-12-05 주식회사 효성 안트라세닐 벤질기 발색단을 포함하는 공중합체, 상기공중합체의 제조방법, 상기 공중합체를 포함하는유기반사방지막 조성물 및 상기 조성물을 포함하는유기반사방지막
KR101111647B1 (ko) * 2009-08-27 2012-02-14 영창케미칼 주식회사 반도체 패턴 형성을 위한 i-선용 네가티브형 포토레지스트 조성물
JP2011175241A (ja) * 2009-12-15 2011-09-08 Rohm & Haas Electronic Materials Llc フォトレジストおよびその使用方法
CN101768373A (zh) * 2010-01-08 2010-07-07 武汉科技学院 一种重氮偶合法制备水溶性乙烯砜型聚氨酯类高分子活性染料的方法
JP6049250B2 (ja) 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤
US8480815B2 (en) * 2011-01-14 2013-07-09 GM Global Technology Operations LLC Method of making Nd-Fe-B sintered magnets with Dy or Tb
CN102492309B (zh) * 2011-11-11 2013-06-19 大连理工大学 悬挂型光热转换有机相变染料
WO2013074622A1 (en) 2011-11-14 2013-05-23 Orthogonal, Inc. Method for patterning an organic material using a non-fluorinated photoresist
US9500948B2 (en) 2013-05-31 2016-11-22 Orthogonal, Inc. Fluorinated photoresist with integrated sensitizer
US20140356789A1 (en) * 2013-05-31 2014-12-04 Orthogonal, Inc. Fluorinated photopolymer with integrated anthracene sensitizer
US9063420B2 (en) 2013-07-16 2015-06-23 Rohm And Haas Electronic Materials Llc Photoresist composition, coated substrate, and method of forming electronic device
US8933239B1 (en) 2013-07-16 2015-01-13 Dow Global Technologies Llc Bis(aryl)acetal compounds
US9410016B2 (en) 2013-07-16 2016-08-09 Dow Global Technologies Llc Aromatic polyacetals and articles comprising them
US8962779B2 (en) 2013-07-16 2015-02-24 Dow Global Technologies Llc Method of forming polyaryl polymers
US9298088B2 (en) 2013-07-24 2016-03-29 Orthogonal, Inc. Fluorinated photopolymer with fluorinated sensitizer
US9541829B2 (en) 2013-07-24 2017-01-10 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
KR102028483B1 (ko) * 2013-09-17 2019-10-07 동우 화인켐 주식회사 착색 감광성 수지 조성물, 컬러필터 및 이를 구비한 액정표시장치
US9772558B2 (en) 2013-09-24 2017-09-26 International Business Machines Corporation Sulfonic acid ester containing polymers for organic solvent based dual-tone photoresists
CN106662808A (zh) 2014-02-07 2017-05-10 正交公司 可交联的氟化光聚合物
JP2016018075A (ja) 2014-07-08 2016-02-01 東京応化工業株式会社 レジストパターン形成方法及びレジスト組成物
KR102480950B1 (ko) 2014-12-24 2022-12-23 올싸거널 인코포레이티드 전자 장치의 포토리소그래피 패터닝
JP7243180B2 (ja) * 2017-12-25 2023-03-22 東ソー株式会社 光架橋性重合体、絶縁層及びこれを含む有機トランジスタデバイス
GB201903420D0 (en) * 2019-03-13 2019-04-24 Nanotronix Inc Photoresist
JP7504659B2 (ja) * 2020-05-18 2024-06-24 東京応化工業株式会社 化学増幅型感光性組成物、感光性ドライフィルム、パターン化されたレジスト膜の製造方法、めっき造形物の製造方法、化合物、及び化合物の製造方法
JP7377848B2 (ja) 2020-12-31 2023-11-10 ローム アンド ハース エレクトロニック マテリアルズ エルエルシー フォトレジスト組成物及びパターン形成方法
EP4435517A4 (en) * 2021-11-15 2025-03-19 Nissan Chemical Corporation Polycyclic aromatic hydrocarbon-based light-curable resin composition

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1359472A (en) * 1970-09-01 1974-07-10 Agfa Gevaert Photographic recording and reproduction of information
BE786973A (nl) * 1971-08-27 1973-01-31 Agfa Gevaert Nv Fotografisch registreren en reproduceren van informatie
BE787339A (nl) * 1971-09-14 1973-02-09 Agfa Gevaert Nv Fotografische registratie en reproductie van informatie
US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
EP0153904B1 (de) 1984-02-10 1988-09-14 Ciba-Geigy Ag Verfahren zur Herstellung einer Schutzschicht oder einer Reliefabbildung
US4618566A (en) * 1984-10-31 1986-10-21 Ecoplastics Limited Fluorene containing compounds and negative photoresist compositions therefrom
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
EP0305545B1 (en) * 1987-03-17 1993-02-10 Hitachi Chemical Co., Ltd. Substituted acridine derivatives and their use
EP0380667A4 (en) * 1987-10-07 1991-04-24 Terumo Kabushiki Kaisha Ultraviolet-absorbing polymer material and photoetching process
EP0360443A1 (en) * 1988-09-03 1990-03-28 Hitachi Chemical Co., Ltd. Acridine compound and photopolymerizable composition using the same
EP0436639B1 (en) 1988-09-28 1998-01-14 Brewer Science, Inc. Multifunctional photolithographic compositions
JPH02269353A (ja) 1988-10-28 1990-11-02 Hewlett Packard Co <Hp> フォトリソグラフィーによる半導体の製造方法
DE69027799T2 (de) * 1989-03-14 1997-01-23 Ibm Chemisch amplifizierter Photolack
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
US5391465A (en) * 1989-06-20 1995-02-21 Rohm And Haas Company Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
US5212046A (en) * 1989-10-17 1993-05-18 Shipley Company Inc. Near UV photoresist
JP2505637B2 (ja) * 1990-09-28 1996-06-12 日立化成工業株式会社 光重合性組成物および光重合性エレメント
JPH04170546A (ja) * 1990-11-01 1992-06-18 Fuji Photo Film Co Ltd 光重合性組成物
US5250395A (en) 1991-07-25 1993-10-05 International Business Machines Corporation Process for imaging of photoresist including treatment of the photoresist with an organometallic compound
US6165697A (en) 1991-11-15 2000-12-26 Shipley Company, L.L.C. Antihalation compositions
US5296332A (en) * 1991-11-22 1994-03-22 International Business Machines Corporation Crosslinkable aqueous developable photoresist compositions and method for use thereof
US5322765A (en) 1991-11-22 1994-06-21 International Business Machines Corporation Dry developable photoresist compositions and method for use thereof
KR960015081A (ko) * 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US5576359A (en) 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
DE69511141T2 (de) 1994-03-28 2000-04-20 Matsushita Electric Industrial Co., Ltd. Resistzusammensetzung für tiefe Ultraviolettbelichtung
US5607824A (en) 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
US6136498A (en) * 1996-06-28 2000-10-24 International Business Machines Corporation Polymer-bound sensitizer

Also Published As

Publication number Publication date
US20090220888A1 (en) 2009-09-03
JP2007058236A (ja) 2007-03-08
JPH10186647A (ja) 1998-07-14
DE69726378D1 (de) 2004-01-08
EP0834770B1 (en) 2003-11-26
DE69726378T2 (de) 2004-09-16
US20060204892A1 (en) 2006-09-14
US7632630B2 (en) 2009-12-15
JP4250182B2 (ja) 2009-04-08
EP0834770A2 (en) 1998-04-08
EP0834770A3 (en) 1999-07-21
US7147983B1 (en) 2006-12-12

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